1N914
Abstract: M2764A M27C64A
Text: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■
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M2764A
180ns
M2764A
M27C64A
1N914
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HCF4585B
Abstract: HCC4585B HCC4585BF HCF4585BC1 HCF4585BEY HCF4585BM1
Text: HCC/HCF4585B 4-BIT MAGNITUDE COMPARATOR . . . . . EXPANSION TO 8, 12, 16 . 4 N BITS BY CASCADING UNITS MEDIUM-SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns typ. AT 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V, AND 15V PARAMETRIC RATINGS
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HCC/HCF4585B
180ns
100nA
HCC4585BF
HCF4585BM1
HCF4585BEY
HCF4585BC1
HCC4585B
HCF4585B
HCC4585B
HCC4585BF
HCF4585BC1
HCF4585BEY
HCF4585BM1
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HCF4585B
Abstract: No abstract text available
Text: HCF4585B 4-BIT MAGNITUDE COMPARATOR • ■ ■ ■ ■ ■ ■ ■ EXPANSION TO 8, 12, 16.4 N BITS BY CASCADING UNIT MEDIUM SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns Typ. at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO
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HCF4585B
180ns
100nA
JESD13B
HCF4585B
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180NS
Abstract: b2764a M2764A M27C64A
Text: M2764A NMOS 64K 8K x 8 UV EPROM DATA BRIEFING FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
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M2764A
180ns
FDIP28W
M2764A
M27C64A
180ns,
200ns,
250ns,
300ns,
180NS
b2764a
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M27C64A
Abstract: 1N914 M2764A
Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M2764A
180ns
FDIP28W
M2764A
M27C64A
1N914
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180NS
Abstract: M2764A M27C64A b2764a A0-A12
Text: M2764A 64 Kbit 8Kb x 8 NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
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M2764A
180ns
FDIP28W
M2764A
M27C64A
180ns,
200ns,
250ns,
180NS
b2764a
A0-A12
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TC4422
Abstract: TC4421 TC4422EPA TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422MJA
Text: M TC4421/TC4422 9A High-Speed MOSFET Drivers Package Type Features • • • • Tough CMOS Construction High Peak Output Current: 9A High Continuous Output Current: 2A Max Fast Rise and Fall Times: - 30nsec with 4,700pF Load - 180nsec with 47,000pF Load
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TC4421/TC4422
30nsec
700pF
180nsec
000pF
O-220-5
TC4421
TC4422
TC4422
TC4421
TC4422EPA
TC4421CAT
TC4421CPA
TC4421EPA
TC4421MJA
TC4422CAT
TC4422CPA
TC4422MJA
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Untitled
Abstract: No abstract text available
Text: 2SK1967 Power F-MOS FETs 2SK1967 Silicon N-Channel Power F-MOS Unit : mm • Features ● Low-voltage ● High-speed 3.4±0.3 8.5±0.2 switching : tf =180ns 6.0±0.5 1.0±0.1 ■ Applications ● Motor 1.5max. drive 10.5min. ● Solenoid drive ● Control
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2SK1967
180ns
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)
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2SK1266
180ns
2SKi266
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC
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KM44C1000AL
KM44C1OOOAL-
180ns
20-LEAD
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2SK1267
Abstract: SC-65
Text: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.
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2SK1267
180ns
0D171ba
-25tH
2SK1267
SC-65
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Untitled
Abstract: No abstract text available
Text: KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: Ï rac tcAc tfiC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10 100ns 25ns 180ns KM44V1000BLL-7 • • • • •
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KM44V1000BLL
KM44V1000BLL-7
KM44V1000BLL-8
KM44V1000BLL-10
100ns
130ns
150ns
180ns
KM44V1000BLL
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tcam
Abstract: No abstract text available
Text: KMM5402000A/AG DRAM MODULES 2 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tR C K M M 5402000A - 7 70ns 20 ns 130ns K M M 5402000A - 80ns 2 0 ns 150ns 25ns 180ns 8 K M M 5402000A -10 • • • • • • •
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KMM5402000A/AG
402000A
72-pin
130ns
150ns
180ns
tcam
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KMM5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 KMM5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability
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KMM5321OOOW/WG
KMM5321000W
42-pin
72-pin
22/xF
M5321000W-7
KMM5321000W-8
M5321000W-10
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Untitled
Abstract: No abstract text available
Text: T'ìS'IEa? GQS7432 b SGS-THOMSON ST2764AP iy 3QE D S G S-THOMSON 64K 8K x 8 NMOS ONE TIME PROGRAMMABLE ROM • FAST ACCESS TIME: 180ns ■ 0 to + 7 0 °C STANDARD TEMPERATURE RANGE ■ SIMGLE + 5 V POWER SUPPLY ■ ± 1 0 % V cc TOLERANCE AVAILABLE ■ LOW STANDBY CURRENT (35mA MAX)
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GQS7432
ST2764AP
180ns
ST2764AP
536-bit
200ns,
id764A-18XCP
ST2764A-20XCP
ST2764A-18CP
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2SK12
Abstract: 2SK1267 SC-65 panasonic 2SC Scans-002934
Text: Power F-MOS FET 2SK1267 2SK12Ó7 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDS on : RDS (on) l = 0 .0 7 fl (typ.) • High switching ra te : tf= 180ns (typ.) Unit: mm 15.5max. 13.5max. • No secondary breakdow n
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2SK12Ã
2SK1267
180ns
2SK12
2SK1267
SC-65
panasonic 2SC
Scans-002934
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Untitled
Abstract: No abstract text available
Text: KMM540512B DRAM MODULES 5 1 2 K X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 540512B- 8 80ns 20ns 150ns KM M 54051 2B-10 100ns 25ns 180ns KM M 540512B- 7 The Samsung K M M 540512B is a 5 1 2K bits X 40
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KMM540512B
130ns
540512B-
150ns
2B-10
100ns
540512B
KMM54051
20-pin
72-pin
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2SK1033
Abstract: 25C1 2SK103
Text: P o w er F-MOS FET 2SK1033 2SK1033 Silicon N-channel Power F-M O S FET • Package D im ensions ■ Features • L ow ON r e s is ta n c e R ds on : R Ds (on) = 0 .0 4 5 f i (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 180ns (ty p .) • N o se c o n d a ry b reak d o w n
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2SK1033
045ft
180ns
b132fl52
2SK1033
25C1
2SK103
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CMP01CP
Abstract: CMP-01 cmp01ep CMP01CJ CMP01EZ cmp01c CMP01Z CMP01J CMP-01E CMP01CZ
Text: Fast Precision Comparator CMP-01 ANALOG ► DEVICES GENERAL DESCRIPTION features • • • • • • • • • • • • • Fast Response Tim * . 180nsMax High Input Slew R a te . 92V/Ms
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CMP-01
180ns
30pA/Â
CMP01CP
CMP-01
cmp01ep
CMP01CJ
CMP01EZ
cmp01c
CMP01Z
CMP01J
CMP-01E
CMP01CZ
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365089
Abstract: LA 6508
Text: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max
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HM-6508
HM-6508
365089
LA 6508
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Untitled
Abstract: No abstract text available
Text: / = T ^ 7 #. S C S -T H O M S O N HQ g[E(Q [lLE(gir^(Q)ilQ(gi M2764A NMOS 64K (8K x 8) UV EPROM • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM
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M2764A
180ns
M2764A
M27C64A
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VA00776
Abstract: No abstract text available
Text: r=7 SGS-THOMSON M2764A NMOS 64K 8K x 8 UV EPROM • FAST ACC ESS TIM E: 180ns • EXTENDED TEM PERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35m A max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMM ING ALGORITHM ■ ELECTRONIC SIGNATURE
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M2764A
180ns
FDIP28W
27C64A
M2764A
VA00776
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CQ 765
Abstract: No abstract text available
Text: KMM594020A DRAM MODULES 4 M x 9 CMOS DRAM SIMM Memory Module, Low Power GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tñC KMM594020A-7 70ns 20ns 130ns KMM594020A-8 80ns 20ns 150ns KMM594020A-10 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability
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KMM594020A
KMM594020A-7
KMM594020A-8
KMM594020A-10
100ns
130ns
150ns
180ns
KMM594020A
CQ 765
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Untitled
Abstract: No abstract text available
Text: KMM591020AN DRAM MODULES 1 M x 9 DRAM SIM M Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: I rac tcAC tnc 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns KMM591020AN-7 KMM591020AN-8 KMM591020AN-10 • • • • • •
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KMM591020AN
KMM591020AN-7
KMM591020AN-8
KMM591020AN-10
100ns
130ns
150ns
180ns
KMM591020AN
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