185T2B
Abstract: BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2
Text: BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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BDY26,
BDY27,
BDY28,
183T2
184T2
185T2
185T2B
BDY28B
185t2
185T2A
bdy27
BDY28C
BDY28A
185T2C
BDY28
183T2
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apex pa26
Abstract: APEX pa21 PA26 audio amp MSK184 PA26 transistor smd 183 NV SMD TRANSISTOR MSK182 MSK183 MSK185
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/ 184/185 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: MSK185 Replaces APEX PA26 MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152
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ISO-9001
MIL-PRF-38534
MSK185
MSK184
MSK183
MSK182
MSK184
MSK185
MIL-PRF-38534/DSCC
MSK182
apex pa26
APEX pa21
PA26 audio amp
PA26
transistor smd 183
NV SMD TRANSISTOR
MSK183
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05-08-1330
Abstract: No abstract text available
Text: H Package 3-Lead TO-39 Metal Can Reference LTC DWG # 05-08-1330 .350 – .370 (8.890 – 9.398) .305 – .335 (7.747 – 8.509) .050 (1.270) MAX .165 – .185 (4.191 – 4.699) REFERENCE PLANE * .016 – .019* (0.406 – 0.483) DIA .500 (12.700) MIN .200
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Reference LTC DWG
Abstract: No abstract text available
Text: H Package 4-Lead TO-39 Metal Can Reference LTC DWG # 05-08-1331 .350 – .370 (8.890 – 9.398) .305 – .335 (7.747 – 8.509) .050 (1.270) MAX .165 – .185 (4.191 – 4.699) REFERENCE PLANE * .016 – .019* (0.406 – 0.483) DIA .500 (12.700) MIN .200
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74SZ125
Abstract: quanta LTN150U2-L02 quanta computer sharp lq150x1lh82 QUANTA KT5 SAMSUNG C541 LTN141 N20122PS800-0805 LQ150X1LH82
Text: 5 4 3 2 1 MODEL Model 1A KT5 MB 2A D 3A FIRST RELEASE REFERENCE THE ECN E200203-324 REFERENCE THE ECN E200203-382 3C REFERENCE THE ECN E200204-185 3 Page PRELIMINARY RELEASE 3B 3D KT5 CHANGE LIST REV REFERENCE THE ECN E200204-457 REFERENCE THE ECN E200 C B
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E200203-324
E200203-382
E200204-185
E200204-457
31KT5MB0001
2N7002E
SI4404
1mR-7520PC13
20mil
74SZ125
quanta
LTN150U2-L02
quanta computer
sharp lq150x1lh82
QUANTA KT5
SAMSUNG C541
LTN141
N20122PS800-0805
LQ150X1LH82
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Untitled
Abstract: No abstract text available
Text: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage
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NTE2669
NTE2669
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SDT13305
Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251
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2N2811
2N2812
2N2813
2N2814
2N4070
2N4071
2N4301
2N5006
2N5008
2N5218
SDT13305
SDT12302
SDT13303
SDT7603
SDT7732
2N2811
2N2812
2N2813
2N2814
2N4070
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SDT85502
Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913
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2N2657
2N2658
2N2877
2N2878
2N2879
2N2880
2N2890
2N2891
2N3744
2N3745
SDT85502
SDT849
a/TO111
2N5002
SDT3403
SDT6314
BU208
2N2657
2N2877
2N2879
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RP1094
Abstract: RP1105 fc69 RFM SAW Oscillator
Text: RP1105 • • • • • Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS Pb 640.0 MHz SAW Resonator The RP1105 is a two-port, 180° surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at
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RP1105
2002/95/EC
RP1105
RP1094
fc69
RFM SAW Oscillator
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r 639 r 640
Abstract: r 639 saw resonator RP1094 RP1105
Text: RP1105 640.0 MHz • • • • SAW Resonator Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case The RP1105 is a two-port, 180° surface-acoustic-wave SAW resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization
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RP1105
RP1105
O39-3
RP1105-113098
r 639 r 640
r 639 saw resonator
RP1094
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Untitled
Abstract: No abstract text available
Text: RP1105 • • • • Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case 640.0 MHz SAW Resonator The RP1105 is a two-port, 180° surface-acoustic-wave SAW resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at or
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RP1105
RP1105-110499
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KM74B4006
Abstract: No abstract text available
Text: PRELIMINARY KM74B4006 Synchronous SRAM 1M x 4 Bit Synchronous Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 0 ,12,15 ns Max. • Low Power Dissipation KM74B4006J-10 : 190 mA(MAX.) KM74B4006J-12 : 185 mA(MAX.) KM74B4006J-15 : 180 mA(MAX.)
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KM74B4006
KM74B4006J-10
KM74B4006J-12
KM74B4006J-15
KM74B4006J
36-SOJ-
KM74B4006J
0021t
KM74B4006
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C25P09Q C25P10Q 27.7A /90— 100V FEATURES °Similar to TO-247AC TO-3P Case 5.3(209) 4.7(185) 5.71224) 5.3(.208) • Dual Diodes - Cathode Common • Low Forward Voltage Drop "Low Power Loss, High Efficiency 'iTLT 2.2(.087M ] f k i l H
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C25P09Q
C25P10Q
O-247AC
C25P09Q
bblS123
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C25P20F
Abstract: C25P10F C25P10FR C25P20FR
Text: FAST RECOVERY DIODE C25P10F C25P20F C25P10FR C25P20FR 27.7A/100~ 200V/trr : 50nsec FEATURES 5 .3 1 2 0 9 4.7 185 ) « Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery ° Low Forward Voltage Drop
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A/100
00V/trr
50nsec
C25P10F
C25P20F
C25P10FR
C25P20FR
O-247AC
C25P10F
C25P20FR
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C25P20F
Abstract: c25p UAA 180 C25P10F C25P10FR C25P20FR
Text: FAST RECOVERY DIODE 27.7A /10 0 ~ 2 0 0 V /trr:5 0 n so c C25P10FR C25P20FR 5.3 .209 4.7( 185) FEATURES HP- » Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery 2.2(.087H 3.2(.126)~ |0.8(.031) MAX
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A/100
00V/trr
50nsec
C25P10F
C25P20F
C25P10FR
C25P20FR
O-247AC
C25P10F
c25p
UAA 180
C25P20FR
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FAG 32 diode
Abstract: FAG 14 diode 1AM Diode
Text: SCHOTTKY BARRIER DIODE C30P05Q C30P06Q 33A/50~ 60V FEATURES 4.7 .185 ° Similar to TO-247AC (TO-3P) Case n ' J 15.9C.«26)_ 15.3t.602) l _ 5.7^.224) ° Dual Diodes - Cathode Common S T~ i) - è Y f y \ ° Low Forward. Voltage Drop 4.31169) 3.7(.145) l ° Low Power Loss, High Efficiency
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C30P05Q
C30P06Q
3A/50~
O-247AC
C30P05Q
FAG 32 diode
FAG 14 diode
1AM Diode
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SDT7601
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum
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fl3hfib02
203mm)
40MHz
40MHz
300pF
SDT7601
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2SC2222
Abstract: 2SC2093 2sc2103a 2SC2150 2SC2106 2SC2094 2SC2098 203d6 2SC2148 2sc2188
Text: - 116 - MXËfê su z rfi 3$ Ta=25tî, *EP(ÏTc=25^ m Vq e q VcEQ Ic(oc) Pc Pc* (V) (V) (A) (ïï) (W) 0. 5 10 (Ta=25tî) & (max) Vc e (V) 20 200 6 0.1 20 100 5 4 20 185 5 5 28 2SC2094 H # HF PA 40 3.5 30 2000 2SC2097 H * HF PA 50 15 150 5000 2SC2098 * 2
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2SC2093
2SC2094
2SC2097
2SC2098
27/50MHZ
2SC2099
30MHz
2SC2101
2SC2102
2SC2103A
2SC2222
2sc2103a
2SC2150
2SC2106
2SC2098
203d6
2SC2148
2sc2188
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transistor bf 184
Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958
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5109B
O-92a
transistor bf 184
pnp vhf transistor
TO50 transistor
transistor BF 509
BF 914 transistor
BF 184 transistor
transistor BF 451
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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sml60g60an
Abstract: No abstract text available
Text: bGE T> SEHELAB PLC = r r = “ l U l “ / ^ m 6133107 \ 000 0TD 2 SSG • S M L B M j ^ TO3j y O S P O W I G B T SEM E M ■ 4 ^ ' 3 1 -1 1 SML60G60AN LAB E R 600V 60A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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SML60G60AN
sml60g60an
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2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
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2N2657
2N2658
2N2877
O-111
2N2878
2N2879
2N2880
2N5286
2N5290
SOLITRON
2N5740
SDT13305
SDT3775
SDT85502
2N439S
2N5610
2N6562
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2N2387
2N2988
2N2S89
2N2990
2N2991
2N2992
2N2993
2N2994
2N3439
2N3440
2NS604
2NS540
2NS154
SD716
SDT13305
2N5671
2N5005
SDT425
SDT7605
SDT96302
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SDT84
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0
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00S7t
SDT40302
SDT40303
SDT40304
SDT40305
SDT41301
SDT41302
SDT41303
SDT41304
SDT41305
SDT84
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