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    185 TO3 Search Results

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    185T2B

    Abstract: BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2
    Text: BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


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    PDF BDY26, BDY27, BDY28, 183T2 184T2 185T2 185T2B BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2

    apex pa26

    Abstract: APEX pa21 PA26 audio amp MSK184 PA26 transistor smd 183 NV SMD TRANSISTOR MSK182 MSK183 MSK185
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/ 184/185 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: MSK185 Replaces APEX PA26 MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152


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    PDF ISO-9001 MIL-PRF-38534 MSK185 MSK184 MSK183 MSK182 MSK184 MSK185 MIL-PRF-38534/DSCC MSK182 apex pa26 APEX pa21 PA26 audio amp PA26 transistor smd 183 NV SMD TRANSISTOR MSK183

    05-08-1330

    Abstract: No abstract text available
    Text: H Package 3-Lead TO-39 Metal Can Reference LTC DWG # 05-08-1330 .350 – .370 (8.890 – 9.398) .305 – .335 (7.747 – 8.509) .050 (1.270) MAX .165 – .185 (4.191 – 4.699) REFERENCE PLANE * .016 – .019* (0.406 – 0.483) DIA .500 (12.700) MIN .200


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    Reference LTC DWG

    Abstract: No abstract text available
    Text: H Package 4-Lead TO-39 Metal Can Reference LTC DWG # 05-08-1331 .350 – .370 (8.890 – 9.398) .305 – .335 (7.747 – 8.509) .050 (1.270) MAX .165 – .185 (4.191 – 4.699) REFERENCE PLANE * .016 – .019* (0.406 – 0.483) DIA .500 (12.700) MIN .200


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    74SZ125

    Abstract: quanta LTN150U2-L02 quanta computer sharp lq150x1lh82 QUANTA KT5 SAMSUNG C541 LTN141 N20122PS800-0805 LQ150X1LH82
    Text: 5 4 3 2 1 MODEL Model 1A KT5 MB 2A D 3A FIRST RELEASE REFERENCE THE ECN E200203-324 REFERENCE THE ECN E200203-382 3C REFERENCE THE ECN E200204-185 3 Page PRELIMINARY RELEASE 3B 3D KT5 CHANGE LIST REV REFERENCE THE ECN E200204-457 REFERENCE THE ECN E200 C B


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    PDF E200203-324 E200203-382 E200204-185 E200204-457 31KT5MB0001 2N7002E SI4404 1mR-7520PC13 20mil 74SZ125 quanta LTN150U2-L02 quanta computer sharp lq150x1lh82 QUANTA KT5 SAMSUNG C541 LTN141 N20122PS800-0805 LQ150X1LH82

    Untitled

    Abstract: No abstract text available
    Text: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage


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    PDF NTE2669 NTE2669

    SDT13305

    Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251


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    PDF 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 SDT13305 SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


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    PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    RP1094

    Abstract: RP1105 fc69 RFM SAW Oscillator
    Text: RP1105 • • • • • Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS Pb 640.0 MHz SAW Resonator The RP1105 is a two-port, 180° surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at


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    PDF RP1105 2002/95/EC RP1105 RP1094 fc69 RFM SAW Oscillator

    r 639 r 640

    Abstract: r 639 saw resonator RP1094 RP1105
    Text: RP1105 640.0 MHz • • • • SAW Resonator Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case The RP1105 is a two-port, 180° surface-acoustic-wave SAW resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization


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    PDF RP1105 RP1105 O39-3 RP1105-113098 r 639 r 640 r 639 saw resonator RP1094

    Untitled

    Abstract: No abstract text available
    Text: RP1105 • • • • Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case 640.0 MHz SAW Resonator The RP1105 is a two-port, 180° surface-acoustic-wave SAW resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at or


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    PDF RP1105 RP1105-110499

    KM74B4006

    Abstract: No abstract text available
    Text: PRELIMINARY KM74B4006 Synchronous SRAM 1M x 4 Bit Synchronous Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 0 ,12,15 ns Max. • Low Power Dissipation KM74B4006J-10 : 190 mA(MAX.) KM74B4006J-12 : 185 mA(MAX.) KM74B4006J-15 : 180 mA(MAX.)


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    PDF KM74B4006 KM74B4006J-10 KM74B4006J-12 KM74B4006J-15 KM74B4006J 36-SOJ- KM74B4006J 0021t KM74B4006

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE C25P09Q C25P10Q 27.7A /90— 100V FEATURES °Similar to TO-247AC TO-3P Case 5.3(209) 4.7(185) 5.71224) 5.3(.208) • Dual Diodes - Cathode Common • Low Forward Voltage Drop "Low Power Loss, High Efficiency 'iTLT 2.2(.087M ] f k i l H


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    PDF C25P09Q C25P10Q O-247AC C25P09Q bblS123

    C25P20F

    Abstract: C25P10F C25P10FR C25P20FR
    Text: FAST RECOVERY DIODE C25P10F C25P20F C25P10FR C25P20FR 27.7A/100~ 200V/trr : 50nsec FEATURES 5 .3 1 2 0 9 4.7 185 ) « Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery ° Low Forward Voltage Drop


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    PDF A/100 00V/trr 50nsec C25P10F C25P20F C25P10FR C25P20FR O-247AC C25P10F C25P20FR

    C25P20F

    Abstract: c25p UAA 180 C25P10F C25P10FR C25P20FR
    Text: FAST RECOVERY DIODE 27.7A /10 0 ~ 2 0 0 V /trr:5 0 n so c C25P10FR C25P20FR 5.3 .209 4.7( 185) FEATURES HP- » Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery 2.2(.087H 3.2(.126)~ |0.8(.031) MAX


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    PDF A/100 00V/trr 50nsec C25P10F C25P20F C25P10FR C25P20FR O-247AC C25P10F c25p UAA 180 C25P20FR

    FAG 32 diode

    Abstract: FAG 14 diode 1AM Diode
    Text: SCHOTTKY BARRIER DIODE C30P05Q C30P06Q 33A/50~ 60V FEATURES 4.7 .185 ° Similar to TO-247AC (TO-3P) Case n ' J 15.9C.«26)_ 15.3t.602) l _ 5.7^.224) ° Dual Diodes - Cathode Common S T~ i) - è Y f y \ ° Low Forward. Voltage Drop 4.31169) 3.7(.145) l ° Low Power Loss, High Efficiency


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    PDF C30P05Q C30P06Q 3A/50~ O-247AC C30P05Q FAG 32 diode FAG 14 diode 1AM Diode

    SDT7601

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum


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    PDF fl3hfib02 203mm) 40MHz 40MHz 300pF SDT7601

    2SC2222

    Abstract: 2SC2093 2sc2103a 2SC2150 2SC2106 2SC2094 2SC2098 203d6 2SC2148 2sc2188
    Text: - 116 - MXËfê su z rfi 3$ Ta=25tî, *EP(ÏTc=25^ m Vq e q VcEQ Ic(oc) Pc Pc* (V) (V) (A) (ïï) (W) 0. 5 10 (Ta=25tî) & (max) Vc e (V) 20 200 6 0.1 20 100 5 4 20 185 5 5 28 2SC2094 H # HF PA 40 3.5 30 2000 2SC2097 H * HF PA 50 15 150 5000 2SC2098 * 2


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    PDF 2SC2093 2SC2094 2SC2097 2SC2098 27/50MHZ 2SC2099 30MHz 2SC2101 2SC2102 2SC2103A 2SC2222 2sc2103a 2SC2150 2SC2106 2SC2098 203d6 2SC2148 2sc2188

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


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    PDF 5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    sml60g60an

    Abstract: No abstract text available
    Text: bGE T> SEHELAB PLC = r r = “ l U l “ / ^ m 6133107 \ 000 0TD 2 SSG • S M L B M j ^ TO3j y O S P O W I G B T SEM E M ■ 4 ^ ' 3 1 -1 1 SML60G60AN LAB E R 600V 60A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


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    PDF SML60G60AN sml60g60an

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


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    PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    SDT84

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0


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    PDF 00S7t SDT40302 SDT40303 SDT40304 SDT40305 SDT41301 SDT41302 SDT41303 SDT41304 SDT41305 SDT84