C1507
Abstract: C1504 C1502 c1509 C150 CY7C150 R1329
Text: CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing for
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CY7C150
C1507
C1504
C1502
c1509
C150
CY7C150
R1329
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C1507
Abstract: C150 CY7C150 R1329 C1509 C1502
Text: 1CY 7C15 0 CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing
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CY7C150
C1507
C150
CY7C150
R1329
C1509
C1502
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C148
Abstract: CY7C148 CY7C149 R1481 CY7C149-25PC
Text: 49 CY7C148 CY7C149 1Kx4 Static RAM Features • • • • sion is provided by an active LOW chip select CS input and three-state outputs. The CY7C148 remains in a low-power mode as long as the device remains unselected; i.e., (CS) is HIGH, thus reducing the average power requirements of the
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CY7C148
CY7C149
CY7C148
CY7C149
7C148)
25-ns
C148
R1481
CY7C149-25PC
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1K x4 static ram
Abstract: C150 CY7C150 R1329 C1507 C1502
Text: 50 CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing
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CY7C150
Cy7C150
1K x4 static ram
C150
R1329
C1507
C1502
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Untitled
Abstract: No abstract text available
Text: CY7C148 1Kx4 Static RAM Features Functional Description • Automatic power-down when deselected ■ CMOS for optimum speed/power ■ 35-ns access time ■ Low active power ❐ 440 mW The CY7C148 is a high-performance CMOS static RAMs organized as 1024 by 4 bits. Easy memory expansion is provided
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CY7C148
CY7C148
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6116 RAM
Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Text: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns
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ECL-10K
16KX1
64KX1
16KX4
64KX4
6116 RAM
7217 up down counter
ram 6116
256KB static RAM
PY 88
74FST3390
7M1002
c 3198
c 3198 transistor
dual-port RAM
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c1484
Abstract: 7c148-35
Text: CY7C148 CY7C149 1Kx4 Static RAM Features Functional Description • Automatic power-down when deselected 7C148 The CY7C148 and CY7C149 are high-performance CMOS static RAMs organized as 1024 by 4 bits. Easy memory expansion is provided by an active LOW chip select (CS) input and three-state
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CY7C148
CY7C149
CY7C149
c1484
7c148-35
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C148
Abstract: CY7C148 CY7C149 R1481 18-LEAD
Text: CY7C148 CY7C149 1Kx4 Static RAM Features • • • • sion is provided by an active LOW chip select CS input and three-state outputs. The CY7C148 remains in a low-power mode as long as the device remains unselected; i.e., (CS) is HIGH, thus reducing the average power requirements of the
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CY7C148
CY7C149
CY7C148
CY7C149
7C148)
25-ns
C148
R1481
18-LEAD
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C148 10A
Abstract: C148 CY7C148 CY7C149 R1481
Text: 1CY 7C14 9 CY7C148 CY7C149 1Kx4 Static RAM Features • • • • sion is provided by an active LOW chip select CS input and three-state outputs. The CY7C148 remains in a low-power mode as long as the device remains unselected; i.e., (CS) is HIGH, thus reducing the average power requirements of the
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CY7C148
CY7C149
CY7C148
CY7C149
7C148)
25-ns
C148 10A
C148
R1481
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C1507
Abstract: 1K x4 static ram
Text: 50 CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing
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CY7C150
Cy7C150
C1507
1K x4 static ram
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74S471
Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
Text: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8
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256x4
512x4
256x8
512x8
7647R
82s23
74S471
mmi 6331
74S287
MMI 6330
74s188 programming
AMD 27S21
MMI 6309
6306 MMI
74S188
74S288 PROGRAMMING
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C1509
Abstract: C1502 C1507 1K x4 static ram C150 CY7C150 R1329 CY7C150-12DMB
Text: 50 CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing
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CY7C150
Cy7C150
C1509
C1502
C1507
1K x4 static ram
C150
R1329
CY7C150-12DMB
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C1482
Abstract: C-1481 C148 c-1486 CY7C148 CY7C149 R1481 c1489
Text: 49 CY7C148 CY7C149 1Kx4 Static RAM Features • • • • sion is provided by an active LOW chip select CS input and three-state outputs. The CY7C148 remains in a low-power mode as long as the device remains unselected; i.e., (CS) is HIGH, thus reducing the average power requirements of the
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CY7C148
CY7C149
CY7C148
CY7C149
7C148)
25-ns
C1482
C-1481
C148
c-1486
R1481
c1489
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IC 4804
Abstract: No abstract text available
Text: FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Common I/O Bus
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41024x1
IC 4804
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4804B
Abstract: 4804 4804BCC semi 4804 4804a c 4804a TCO 706 1N3064 EMM Semi
Text: GENERAL DESCRIPTION FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power
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41024x1
4804B
4804
4804BCC
semi 4804
4804a
c 4804a
TCO 706
1N3064
EMM Semi
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K4505
Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4
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IMS1203
IMS1203M
IMS1223
IMS1223M
16Kx1
IMS1400M
IMS1403
IMS1403M/LM
K4505
1601l
4Kx4 SRAM
MK48T87B
Z30A
SRAM
2kx8 sram
IMS1630
256KX1
MK41S80
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Untitled
Abstract: No abstract text available
Text: intgl ,f, M3625A 4K 1Kx4 PROM : > ' - M • ± 1 0 % Power Supply Tolerance ■ Three-State Outputs ■ Fast Access Time: 60 ns Maximum ■ Polycrystalline Silicon Fuse for Higher Reliability ■ Lower Power Dissipation: 0.14mW/Bit Typically ■ Hermetic 18-Pin DIP
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M3625A
14mW/Bit
18-Pin
M3625A
4096-bit
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M3625A
Abstract: No abstract text available
Text: intei i ä:; : M3625A 4K 1Kx4 PROM à i • ± 1 0 % Power Supply Tolerance Three-State Outputs ■ Fast Access Time: 60 ns Maximum Polycrystalline Silicon Fuse for Higher Reliability ■ Lower Power Dissipation: 0.14mW/Bit Typically Hermetic 18-Pin DIP
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M3625A
14mW/Bit
18-Pin
4096-bit
J-30pF
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M3625A
Abstract: No abstract text available
Text: intei M3625A 4K 1Kx4 PROM • ± 10% Power Supply Tolerance ■ Three-State Outputs ■ Fast Access Time: 60 ns Maximum ■ Polycrystalline Silicon Fuse for Higher Reliability ■ Lower Power Dissipation: 0.14 mW/Bit Typically ■ Hermetic 18-Pin DIP ■ Simple Memory Expansion Two Chip
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M3625A
14mW/Bit
18-Pin
4096-bit
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Untitled
Abstract: No abstract text available
Text: IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C M HO S’ DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance ments with the additional CMOS benefits of lower power
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IMS1223M
MIL-STD-883C
IMS1223M
MIL-STD883C.
3S-45M
IMS1223A-45M
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WECO* 1502
Abstract: No abstract text available
Text: p yXpX : v « *1 CY7C150 - 1Kx4 Static RAM Features • Memory reset function • 1024 x 4 static RAM for control store in high-speed com puters • CMOS for optimum speed/power • High speed — 10 ns commercial — 12 ns (military) • Low power — 495 mW (commercial)
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CY7C150
WECO* 1502
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IMS1223A-25M
Abstract: IMS1223M IMS1223S-25M
Text: I IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance ments with the additional CMOS benefits of lower power
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IMS1223M
MIL-STD-883C
18-Pin,
300-mil
MIL-STD-883C.
IMS1223M
IMS1223S-25M
IMS1223A-25M
IMS1223A-25M
IMS1223S-25M
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Untitled
Abstract: No abstract text available
Text: _ UNITED M IC R O E L E C T R O N I C S TE 9 3 2 5 8 1 2 U N IT E D . M IC R O E L E C T R O N IC S D Ë J 1325015 0000523 S 92D 0 05 23 T-46-23-12 1Kx4 CMOS Static RAM PIN C O N F IG U R A T IO N T T L Compatible • Three State Outputs ■ Data Retention Supply Voltage:
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T-46-23-12
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ST L487
Abstract: No abstract text available
Text: C Y 7 C 1 4 8 C Y 7 C 1 4 9 P YP: V « *1 i. X - 1Kx4 Static RAM sion is provided by an active LO W chip select CS input and th re e -sta te outputs. T h e C Y 7 C 1 48 rem ains in a lo w -po w e r m ode as long as th e device rem ains un selected; i.e., (CS) is
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25-ns
ST L487
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