R1481 Search Results

7cl6

Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Contextual Info: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power

K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

DS377

Contextual Info: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

A10C

Abstract: CY7C170 C1702 7C170 SA78
Contextual Info: 4bE » n QDGbSS3 b • ICYP 256^2 CY7C170 *»■> sÆ CYPRESS _ g SEMICONDUCTOR 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • H ighspeed The CY7C170 is a high-performance CMOS static RAM organized as 4096

automaticpower change over switch circuit diagram

Abstract: CY7C185 CY7C185A
Contextual Info: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable

Contextual Info: CYPRESS PRELIMINARY Features • High-density 32-m egabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through 1M x 32 • High-speed SRAMs — Access tim e of 12 ns • Low active power — 8.36W m ax. at 12 ns • 72 pins

Contextual Info: CYPRESS 4bE SEMI CONDUCTOR D m SSaTbbE ODOVbáO ^ T -4 6 ^ 1 4 J S.B1CYP CYM1841 CYPRESS r¿r SEMICONDUCTOR 256K x 32 Static R A M M odule Features Functional Description • H lgh-denslty 8-m egabtt SRAM m odule T h e CYM 1841 is à h ig h-perform ance 8-m egabit static R A M m odulé o rganized

Contextual Info: fax id: 2017 CYM1841A CYM1841C 256K x 32 Static RAM Module Features individual bytes o r any com b in ation o f m ultiple bytes throu gh p ro pe r use of selects. • H ig h -d e n s ity 8 -m eg ab it S R A M m o d u le • 32 -b it sta n d ard fo o tp rin t s u p p o rts d en sitie s from 16K

CY7C199-20DC

Contextual Info: CYPRESS 4bE SEMICONDUCTOR asa%t>a » aoobba? 3 i CYP CY7C198 CY7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power

NV18

Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
Contextual Info: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

RTM875T-605

Abstract: PCI7412 ISL6255 cp2211f E5317 1D05V SB3032 rtm875t 8C622 APL531230
Contextual Info: A B C D Columbia/Tangiz Block Diagram Project code: 91.4T301.001 PCB P/N : 48.4T301.01M REVISION : -1M Mobile CPU CLK GEN. 4 2.0G : 71.MEROM.A0U 2.33G : 71.MEROM.B0U 71.09502.00W HOST BUS 533/667 MHz 533/667MHz 533/667 MHz 4, 5 667/800MHz@1.05V TOP 14 CRT

PCI7412

Abstract: RTM875T-605 SB3030 CP2211F foxconn Wistron Corporation U41S 1D05V APL5915KAI Socket AM2
Contextual Info: A B C D Columbia/Tangiz Block Diagram Project code: 91.4T301.001 PCB P/N : 48.4T301.0SA REVISION : 06236-SA Mobile CPU CLK GEN. 4 2.0G : 71.MEROM.A0U 2.33G : 71.MEROM.B0U 71.09502.00W 533/667MHz 533/667 MHz PCB STACKUP TV Out 4, 5 TOP 14 CRT DVI 44 APL5915

C148

Abstract: CY7C148 CY7C149 R1481 CY7C149-25PC
Contextual Info: 49 CY7C148 CY7C149 1Kx4 Static RAM Features • • • • sion is provided by an active LOW chip select CS input and three-state outputs. The CY7C148 remains in a low-power mode as long as the device remains unselected; i.e., (CS) is HIGH, thus reducing the average power requirements of the

7b174

Contextual Info: PRELIM INARY CY7B173 CY7B174 r^ y p p u c Q Features • Supports 50-MHz cache systems • 32K by 9 common I/O • BiCMOS for optimum speed/power • 14-ns access delay clock to output • Ttoo-bit wraparound counter support­ ing the 486 burst sequence (7B173)

AB3F

Abstract: CY7B175
Contextual Info: BBMSS PRELIMINARY CY7B175 CYPRESS ^ : • ■-'= SEMICONDUCTOR 32K x 9 Synchronous Pentium CPU Cache RAV RAM Features • Supports 66-MHz Pentium CPU cache systems • Supports zero-wait-state performance • 7.5-ns access delay clock to output withOpF

a1310c

Abstract: 5K530
Contextual Info: 41E D • Söbf l MSb m IIII GODllflS H W IH M V MATRA 525 ■ H f l H S _ 2 5 - /0 September 1990 M H S DATA SHEET_ HM 65791 16 K x 4 HIGH SPEED CMOS SRAM SEPARATE I/O AND TRANSPARENT WRITE FEATURES « FAST ACCESS TIME

C182

Abstract: CY7C182 R1481 C1827
Contextual Info: 1CY 7C18 2 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the

7C188

Abstract: CY7C188
Contextual Info: CY7C188 • / CYPRESS 32K x 9 Static RAM Features Functional Description • High speed — 20 ns The CY7C188 is a high-perform ance CMOS static R A M organized as 32,768 words by 9 bits. Easy mem ory expansion is provided by an active-LOW chip enable C E j , an active-H IG H chip enable (C E2),

Contextual Info: M SE 3> SñbfiHSb GDGSlñl 121 •MMHS _Tu£ < ^2 3 - /0 M Preliminary January 1991 HATRA M H S HM 65799 HI-REL DATA SHEET 64 k x 4 WITH OE HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE

Contextual Info: M l M A I S September 1989 HM 65764 DATASHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME

Contextual Info: 4RE D Sñtjfl4Sb □□□llT'ì bfib M M M H S fililíI V r H I September 1990 MATRA M H S HM 65790 DATASHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN

MHS 65756

Abstract: HM1-65756
Contextual Info: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE

Contextual Info: Mirimi • Advance Inform ation W f ln lM v September 1989 DATA SHEET_ HM 65772 4 kx 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN

Contextual Info: 4TE D • Sôbô4Sb GGG123S 535 ■ llllrm I WW i BH MS l l M llll P Preliminary matra n NMHS September 1990 h s HM 65799 DATASHEET 64 K x 4 WITH OE HIGH SPEED CMOS SRAM FEATURES FAST ACC ESS TIM E IND USTR IAL/M ILITAR Y : CO M M ER CIA L : 300 M ILS W IDTH PACKAGE