237 MOTOROLA TRANSISTOR Search Results

BC238B

Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25

BC238B

Abstract: BC239 BC237A BC238 BC237 bc237v
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25

lm 337 transistor

Abstract: 337BT 337T VOLTAGE REGULATOR lm337a motorola LM337 LM337TLM
Contextual Info: LM137 LM237 LM337 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA THREE-TERMINAL ADJUSTABLE OUTPUT NEGATIVE VOLTAGE REGULATORS The LM137/237/337 are adjustable 3-terminal negative voltage regulators capable of supplying in excess of 1.5 A over an output voltage range of -1.2 V to -3 7 V. These voltage regulators are

ym 238

Abstract: transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237
Contextual Info: "nOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC Tt 9 6D 8 0 5 7 3 CXSTRS/R F D T-33-09 BD233 BD235 BD237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE POWER TRANSISTOR P LA STIC M E D IU M POW ER S IL IC O N N P N TR A N S IS TO R NPN SILICO N . . . designed for use in 5 to 10 Watt audio amplifiers and drivers

Contextual Info: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181

transistor sc 236

Abstract: transistor sc 238
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers

221A-06

Abstract: AN569
Contextual Info: MOTOROLA SC XSTRS/R F hSE D • b3b?254 ÜO^flbMT flüb M0 T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Pow er Field Effect Transistor N -C hannel Enhancem ent-M ode S ilic o n G ate This TMOS Power FET is designed for medium voltage, high

2N4410 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO 120 V dc E m itte r-B a s e Voltage C o lle c to r-E m itte r Voltage Unit v EBO

2N5032

Abstract: 2N5031 t0206
Contextual Info: MOTOROLA SEM ICO NDUCTOR 2N5031 2N5032 TECHNICAL DATA The RF Line 2.5 dB @ 450 MHz - 2N5031 3.0 dB @ 450 MHz - 2N5032 HIG H FREQUENCY TRANSISTORS NPN SILICON HIG H FREQUENCY TRANSISTORS NPN SILICON . . . designed p r im a r ily signal a m p lifie rs . •

C237B

Abstract: BC237 bc239b
Contextual Info: MO TOROLA SC 12E O I k>3b?c!54 0005035 T | XSTRS/R F T-a?-}? BC237, A, B, C BC238, A, B, C BC239, B, C M A X IM U M RATINGS Sym bol R atin g U n it BC BC BC 2 37 2 3 8 2 39 C oltector-E m itter Voltage VCEO 45 25 25 Vdc C olle cto r-E m itte r Voltage VCES

BC238

Abstract: 238C BC239 25CC BC237 BC237A BC307 BC308C JE125 BC239C
Contextual Info: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S S ym b o l R a tin g BC BC BC U n it 237 238 239 Co Ilector-E m itter Voltage VCEO 45 25 25 Vdc C o lle cto r-E m itte r Voltage VCES 50 30 30 Vdc Vebo 6.0 5.0 5.0 Vdc Em itter-Base Voltage CASE 29-04, STYLE 17

amd 2904

Abstract: BC237A BC239 BC237B BC237 BC238B BC238 238B BC239C
Contextual Info: l°ft! BC237,A,B,C BC238,B,C BC239,C M AXIM UM RATINGS R a tin g Sym bol BC BC BC 237 23 8 23S U n it C o tlecto r-E m itte r Voltage VCEO 45 25 25 Vdc C o lte c to r-E m itte r Vo ltage VCER 50 30 30 Vdc E m itter-B ase Voltage Vebo 6 .0 5 .0 5 .0 Vdc CASE 29-04, STYLE 17

j721

Abstract: j435 MRF19030
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and

U275

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MMBT3904W T1 PNP MMBT3906W T1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û which is designed for low power surface mount

F5211

Abstract: 24 LC 0261 MMBR521L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B R 521L T 1* MRF521 M R F 5 2 1 1LT1 The RF Line PNP Silicon H igh-Frequency Transistor ‘ Motorola Preferred Device Designed primarily for use in the high-gain, !ow-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable ¡n applications requiring fast switching

LM11 op amp

Abstract: LM11CLN c4082 LM11C "LM11"
Contextual Info: LM11C LM11CL MOTOROLA SEMICONDUCTOR TECHNICAL DATA Precision Operational Amplifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude over

fy sot 143

Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA
Contextual Info: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers

56590653B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

TR BC 237 B

Abstract: TR BC 238 C238B 239 BC bc237v
Contextual Info: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S R a tin g Sym bol U n it BC BC BC 237 238 239 C o llecto r-E m itte r Voltage VCEO 45 25 25 C olle cto r-E m itte r Voltage VCES 50 30 30 Vdc vebo 6.0 5.0 5.0 Vdc E m itter-Base Voltage Vdc CASE 29-04, STYLE 17

MBT5551LT1

Abstract: MBT5551L T0236AB
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage

mrf237 MOTOROLA

Abstract: choke vk200 VK200 inductor of high frequencies motorola MRF MRF237 motorola mrf237 Motorola transistors MRF vk200 choke VK200 mrf237 motorola application note amplifier power
Contextual Info: MOTOROLA Order this document by AN955/D SEMICONDUCTOR APPLICATION NOTE AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for Land Mobile Radios Prepared by: Ken Dufour

Contextual Info: MOTOROLA O rder th is docum ent by BAV74LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE CATHODE H — o 1 -M - -O 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current If 200

MRF237

Abstract: Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF1946A MRF transistor 237 MRF high power transistor
Contextual Info: Order this document by AN955/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN955 A COST EFFECTIVE VHF AMPLIFIER FOR LAND MOBILE RADIOS Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF

MRF237

Abstract: mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 MRF1946A Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for