245DEG Search Results

panasonic EEEFK1C470UR

Abstract: 47 vfk EEEFK1H470XP EEEFK1V331P EEEKF1V EEE-FK1H470XP Panasonic 330 vfk eeefk1c101p panasonic EEE-FK1V101XP EEEFK2A151AM
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN NOTICE SUBJECT: V-FKseries Surface Mount Type Aluminum Electrolytic Capacitors Non-RoHS EEV parts 10mm diameter and under, suffix P and R BULLETIN #: NRFND.PG44.06.05.09-4 Date: June 5, 2009 Page 1 of 5 Details: V-FK series Non-RoHS Surface Mount Type Aluminum Electrolytic

optical sensor

Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera
Contextual Info: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.

39E2527A

Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

XF-15TB-1222XMNL

Abstract: tl217
Contextual Info: REV. 5.0 5.95 0.46±0.05 7.80 2.54 5.30 3.95 5.30 3.30 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 三、ELECTRICAL SPECFICATIONS@25℃: 1. Turn Ratio ±2% :1CT:2CT 9.50 SUGGESTED PAD LAYOUT 0.64 7.60 4 3. Pri LL (100KHz/0.1V):0.4uH MAX 7.37

HBT 01 05

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

GRM31CB30J476K

Abstract: MGFS38E2325 RPC03T
Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: MYLPW3R34EAFN Specification 1 DC-DC Converter Specification MYLPW3R34EAFN 1. Application This specification applies to DC-DC Converter MYLPW3R34EAFN for telecommunication / data-communication equipment.For any other application, please contact us before using this product.

BCS5030G1

Abstract: 5v infrared camera
Contextual Info: Visible Radiant Optical Sensor /Data Sheet BCS5030G1 Application • Brightness control for LCD, EL and CRT • Brightness control for Keypads e. g. Mobile Phones • Positioning scanline for Rear Projecton TV • Exposure adjust for Compact Camera • Sub exposure adjust for Digital Camera

D552

Abstract: MOS13 d3604 moisture sensitivity MPC745 MPC755 Preconditioning
Contextual Info: MPC745/755 Microprocessor MOS-13 HiP4DP Rev. 2.8 Qualification Report Device No./Rev.: MPC745/755 Rev 2.8 Description: MPC745/755 Technology:MOS13 HiP4DP Package: 255PBGA / 360PBGA / 360CBGA Report Rev.: A Revision date: 06/15/04 Page 1 of 7 MPC745/755 Product Information:

Contextual Info: MPDTY461S/MPDTY462S DATA Sheet 1 DC-DC Converter DATA Sheet MPDTY461S/MPDTY462S Feature: Size: 33.02mm*13.46mm*4.2mm Max. Vin : 4.5Vdc-14Vdc Vout : MPDTY461S/1.6Vdc-3.63Vdc, MPDTY462S/0.75Vdc-1.65Vdc Iout : 0-26Adc/10-14Vdc in, 0-20Adc/4.5-10Vdc in 94W Application:

BCS2015H1

Abstract: BCS2015G1
Contextual Info: Visible Radiant Optical Sensor /Data Sheet BCS2015H1 is the photodiode which uses an amorphous silicone semiconductor on the plastic substrate. It is the most suitable for Brightness Adjustment, Control of the Lighting systems,and some light sensing. BCS2015H1 is for conventional surface mounthing.

39E2527A

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

Contextual Info: T-1 3mm SOLID STATE LAMP Part Number: WP710A10VBC/D Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z Low power consumption. The Blue source color devices are made with InGaN Light z Popular T-1 diameter package.

GRM155B11C223K

Abstract: RPC03T GRM155B11 GRM32EB31C476K
Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

2040 li

Abstract: XP-58TB-1226CCNL
Contextual Info: REV. 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 三、ELECTRICAL SPECFICATIONS@25℃: 1. Turn Ratio ±2% Pri:Sec: 1:1CT 2. Pri OCL(100KHz/0.1V): 1.2mH MIN 3. Pri LL(100KHz/0.1V): 0.6uH MAX. 4. CWW(100KHz/0.1V): 35pF MAX 5. HI-POT: 1500Vrms/0.5mA/2Sec

XF00135-32S

Abstract: 273g
Contextual Info: REV. 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 三、ELECTRICAL SPECFICATIONS@25℃: 1. Turn Ratio ±5% Pri:Sec: TX=1:2, RX=1:1 2. Pri OCL(100KHz/0.05V): 1.5mH TYP 3. Pri LL(100KHz/0.05V):0.6uH MAX 4. CWW(100KHz/0.05V):30pF MAX 5. Pri DCR:1.0Ω MAX

11FB-05ANL

Abstract: H1102TNL 11FB-05 100mV8mA b 1370 C1410 tl217 100baseT
Contextual Info: REV. 一Mechanicals Dimensions DESCRIPTION DATE DWN AP’PD 8.89 16 9 三、ELECTRICAL SPECFICATIONS@25℃: 10.67 6.85 6.90 8.89 2. OCL 100KHz/100mV@8mA : 350uH MIN 8 1 1.27±0.10 1. Turn Ratio(±2%): 1CT:1CT 0.46±0.05 3. Insertion Loss(dB MAX): -1.1dB(0.3-100MHz)

AN994

Abstract: AN-955 AN-994 SMD-220
Contextual Info: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA

AN-994

Abstract: AN994 HEXFET SO-8 AN-955 SMD-220 9417
Contextual Info: IR Application Note AN-994 TITLE: Maximizing the Effectiveness of Your SMD Assemblies Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Thermal characteristics of surface-mounted packages II. How we measure Rth JA

photodiode CIE eye response

Abstract: photodiode eyes response application amorphous silicon photodiode BCS2015G1 photodiode eyes response
Contextual Info: Visible Radiant Optical Sensor /Data Sheet BCS2015G1 is the photodiode which uses an amorphous silicone semiconductor on the glass substrate. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015G1 is for surface mounthing.

D7377

Abstract: MC7457RX1000NB D62673 mc7457 360CB D626 MC7447 MOS13 FIT rate d6108
Contextual Info: Semiconductor Products Sector MC7447/MC7457 Microprocessor MOS-13 HiP7SOI Rev. 1.1 / 1.2 Qualification Report MC7447/MC7457 Product Information: Device No./Rev.: MC7447/MC7457 Rev. 1.1/1.2 Description: L/N/W-spec MC7447/MC7457 Technology:MOS13 Package: 360CBGA / 483CBGA

Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •