2N5089 Search Results

2N5088 equivalent

Abstract: 2N5088 2N5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2N5088G

Abstract: 2N5088 equivalent 2n5088 transistor 2N5089 2n2089 2N2089RLRE 2N5088 2N5089G 2n5088 application note
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5088 2N5089 Collector − Base Voltage Vdc VCBO

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088 MOTOrola

Abstract: 2N5089 MOTOROLA 2N5088 equivalent 2n5088 transistor 2N5089 2N508 2N5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N508 8 2N508 9 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage

br1271

Abstract: high gain low noise 2n BF112
Contextual Info: • S fê M IC O N D U G T O P ï ■>« 2N5088 2N5089 MMBT5088 MMBT5089 SOT-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA.

2N5088

Abstract: 2N5089
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage 2N5088 2N5089 Collector − Base Voltage 2N5088 2N5089 Emitter − Base Voltage

2N5088

Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088 equivalent

Abstract: 2n2089 2N5088G 2N5088 2n5088 transistor 2n5088 application note 2N2089RLRA 2N2089RLRAG 2N2089RLRE 2N2089RLREG
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 1 EMITTER

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

hFE-200 to-92 npn

Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N2089

Abstract: 2N2089RLRAG 2n5088 application note 2N5088 equivalent 2n5088 transistor 2N2089RLRA 2N2089RLRE 2N2089RLREG 2N5088 2N5088RLRA
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 VCBO 2N5088

2N5089

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

Contextual Info: B 6M SQ aH D U dT Q H j 2N5088 2N5089 MMBT5088 MMBT5089 SO T-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07.

TIC 1160

Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2n508

Abstract: 2N5086 2N5088 2N5089 2N5087 2N5089 power
Contextual Info: 2N5086 2N5088 2N5087 2N 5089 PHP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS -%. -C•-'■!■- -% Jy , I CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÂP LOW NOISE PREAMPLIFIER CIRCUITS.

2n5088 transistor

Abstract: 2N6088 2N5088 2N5089
Contextual Info: L I< N AMER PHILIPS/DISCRETE SSE D i •" Bi bbSBTBl GG17SGb 7 2N5088 2N5089 T -a^ -ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.

2N5088

Abstract: 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor
Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2NS088: 30V 2N5089: 25V • Collector Dissipation: Pc m ax =625m W V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4 .5 50 625 150 —55^-* 1 5 0

2N5089

Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

mpsa18

Abstract: 2N5088
Contextual Info: 2N5088 2N5089 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit C o lle c to r -E m itte r V o lta g e v CEO 30 25 Vdc C o lle c to r-B a s e V o lta g e v CBO 35 30 V dc 3.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s •Emitter-Base V o lta g e >C

2N5089

Contextual Info: Transistors 2N5089 USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vceo= TO-92 2N5089: 25V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage

2N5088 Fairchild

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.