2SC2594
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC2594
O-126
-50mA
2SC2594
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2SC2594
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC2594
O-126
-50mA
2SC2594
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Untitled
Abstract: No abstract text available
Text: 2SC2594 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.140 h(FE) Max. Current gain.450
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2SC2594
Freq150MÃ
StyleTO-126
Code3-140
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2SC2594
Abstract: No abstract text available
Text: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a lowvoltage power supply
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2SC2594
2SC2594
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2SC2594
Abstract: No abstract text available
Text: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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2SC2594
O-126A-A1
2SC2594
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Vbe 8 V
Abstract: 2SC2594
Text: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a lowvoltage power supply
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2SC2594
Vbe 8 V
2SC2594
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC3420GR
Abstract: 2SC3420Y 2SC2594 2SC3420-BL sm318 2N5025 2N3625 2SC30740 J50G 2sc2270
Text: RF POWER SILICON NPN Item Part Number Number I C >= 2.5 A, BLX39 BLW86 2SC1075 VTV075 2SC2799 BLV32F BLV95 (A) S01274 S01274-1 5 I(C) 10 15 20 25 40 45 50 55 60 65 70 75 80 85 90 Ic Max fT V(BR)CEO Po Max (A) (Hz) (V) (W) hFE Min Max ICBO Max tr Max tf Max
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OT-123
OT-119var
OT-171
OT-123
BLX39
BLW86
2SC1075
VTV075
2SC3420GR
2SC3420Y
2SC2594
2SC3420-BL
sm318
2N5025
2N3625
2SC30740
J50G
2sc2270
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SC2594
Abstract: 2SC2636
Text: P A N A S O N I C I N D L / E L E K - C S E M I } 75 C D | b13EflSM □DDTEDT 3 2SC2594 2SC2594 '> iJ N P N x b° £ ^ '> t u— N P N Epitaxial Planar Power Amplifier ^ h P ^ f f l / F o r Electronic Flash Unit zj w c — £ /C on v erter • # • it /F e a t u r e s
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2SC2594
O-126
200MHz
2SC2594
2SC2636
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2SC2625
Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)
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01l3Tc
2SC2556
2SC2556A
2SC2558-KA
800MHz
2SC2558-MA
2SC2559-KA
2SC2559-MA
2SC2625
2SC2559
2SC2624
2SC2626
2sc2562
2SC2585
2sc2592
251C
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Untitled
Abstract: No abstract text available
Text: Power T ransistors. 2SC299& 2SC2594 Silicon NPN Epitaxial Planar Type • Package Dimensions A F Power Amplifier For Strobo, Converter Unit ! mm ■ Features • L o w c o lle c to r -e m itte r s a tu ra tio n v o ltag e V ce<!.u • H igh p e rfo rm a n c e an d good o p e ra tin g c h a r a c te r is tic s a t low supply
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2SC299&
2SC2594
001L3S5
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nec 2sc3157
Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419
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2SD1660
2SD1198A
2SD1198A
2SD1622
2SD1631
2SC2883
2SD1406
2SC3299
2SD1412
2SD1296
nec 2sc3157
2SD999
2SD1317
2sc3694
2SC3760
2SD2061
2sd2239
nec 1678
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te 1819
Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Text: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =
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2SD1813
2SD1814
2SD1667
2SD1406
2SD2107
2SD2105
2SD1267
2SD1445A
2SD1250
2SC4331
te 1819
2SD1878
2SC4211
2SD1649
2sd1856
1815
2SC4723
2sd1707
2SD1929
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D52 * , D53) U Type (D41) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a) (D56) TO-220F
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O-126
O-202
T0-220
O-220F
2SC1398A
2SB1543
2SB1416
2SB1417
12SD2363
12SD2136
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2SB600 NEC
Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .
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2SD879
2SC3266
2SD965
2SD1624
2SC2873
2SD1119
2SD1963
2SD1692
2SD1233
2SC4339
2SB600 NEC
2SD965
2SD966
2SD2061
2SB600
1951b
2sc3677
2SC3421
2SD1483
2sd1944
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NEC 1357
Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
Text: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft
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2SD1340,
2SD1341,
2SD1342
2SD869
2SD820
2SD870
2SD821
2SD871
2SD553
2SD1173
NEC 1357
SD 1351
2SD1370
2SD869 TOSHIBA
NEC 2SD288
2sc4329
D1351
2SD1944
2SC3252
k 1358
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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