2SC296 Search Results

2SC2964

Contextual Info: SavantIC Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2965

Contextual Info: SavantIC Semiconductor Product Specification 2SC2965 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2429A

Abstract: 2SC2965 2SC2920 C2429A 2SC2429 2SC2964 C2429 C2920 1S90
Contextual Info: FUJITSU MIC R O E L E C T R O N I C S 31E J> HI 374^2 001fc52ô b H FMI c Q if in r ^ JsnuQfy 1990 Edition1-1_ - , ’ •:= P R O D U C T P R O F IL E — — P 2 3 - Î3 i t FUJITSU . * 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power Transistor_

srf 2920

Contextual Info: Ja n u a ry 1990 E d itio n 1.1 P R O D U C T P R O F ILE F u jfrsu : 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power Transistor DESCRIPTION T h is series are s ilic o n N P N p la n e r g eneral p u rp o se , h ig h p o w e r s w itc h in g

KT 829

Abstract: KT 829 b 2SC2960 sanyo 2033 2SA1481
Contextual Info: Ordering number:EN829I PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. unit:mm 2033 [2SA1481/2SC2960] B : Base C : Collector E : Emitter

2SC2960

Abstract: 829H 2SA1481 31M10
Contextual Info: 注文コード No.N 8 2 9 I 2SA1481 / 2SC2960 No. N 8 2 9 I 20400 半導体ニューズ No.829H とさしかえてください。 2SA1481 / 2SC2960 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用

2SC2964

Contextual Info: Inchange Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2965

Contextual Info: Inchange Semiconductor Product Specification 2SC2965 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2978

Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
Contextual Info: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983

KT 829

Abstract: 2SC2960 KT 829 b 2SA1481
Contextual Info: Ordering number:EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. unit:mm 2033 [2SA1481/2SC2960] B : Base C : Collector E : Emitter

Contextual Info: 2SC2964 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V)600 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC2960G Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)150m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)400 @I(C) (A) (Test Condition)10m

2sc1815

Abstract: 2SC710 2SC1359 2SC1856 2SC2058 2SC2068 2SC2960 2SC2060 2SC2497 2SC2008
Contextual Info: 80 - S € T y p e No. H € Manuf. W 2SC 147 V —— 2SC 149 s m 2SC 150 2SC 1 5 3 * * 2SC 154 H 02 2SC 154A en 2SC 1548 B $ SANYO S 2SC 146A ED 2SC 146 tt 3C S TOSHIBA m b NEC ÏL HITACHI 2SC2960 2SC1315 2SC1856 2SC2960 2SC1815 2SC1856 2SC2230 Ä ± Ä

Contextual Info: 2SC2969 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)36 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

829H

Abstract: 2SA1481 SC2960 2SC2960 sa ic E200I
Contextual Info: Ordering num ber: EN 829H N0.829H 2 S A 1 4 8 1 /2 S C 2 9 6 0 PNP/ NPN Epitaxial Planar Silicon Transistors SA\YO i High-Speed Switching Applications Features . Fast switching speed . High breakdown voltage : 2SA1481 Absolute Maximum Ratings at Ta=25°C

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

T30k40d

Abstract: T20W20F3 T30G40 T25U40 2sd573 D5KC20 D2SBA60 SRT-2W6H S60S6 T7K40
Contextual Info: List of Discontinued Parts The discontinued parts are as follows. The ch aracteristics and performance of replacement parts are alm ost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.