2SK216 Search Results

Contextual Info: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

K2162

Abstract: 2SJ338 2SK2162
Contextual Info: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。

2SK213 2Sk214

Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance

toshiba audio power amplifier

Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
Contextual Info: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)

Contextual Info: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

1600 v mosfet

Contextual Info: 2SK2166-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ _ - FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power

Contextual Info: 2SK2166-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications Motor controllers General purpose power amplifier DC-DC converters ±0.3 3.2 +0.3 ±0.3 2.3 ±0.2

Contextual Info: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r

2SK2166-01R

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SJ76

Abstract: Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting

CQ 419

Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Contextual Info: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: Toshiba 2SJ toshiba marking code transistor
Contextual Info: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm

2SK216-E

Abstract: 2SK215 2SK216 2SK213 2SK214 2SJ76 PRSS0004AC-A 2SK214-E 2SK213-e 2SK216E
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 Previous: ADE-208-1241 Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features

REJ03G0122-0200

Abstract: 2SK214 2SJ78 2SJ76 2SJ77 2SJ79 2SK213 2SK215 2SK216 PRSS0004AC-A
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 Previous: ADE-208-1179 Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

2SK2169

Abstract: 5n80 EN4556
Contextual Info: Ordering num ber:E N 4556 _ 2SK2169 No.4556 N-Channel MOS Silicon FET I Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b s o lu te M ax im u m R a tin g s a tT a = 25°C

2SJ338

Abstract: 2SK2162 K2162
Contextual Info: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage

2SK2167

Contextual Info: Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2167] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

Contextual Info: 2SK2165-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications

2SJ76

Abstract: 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130
Contextual Info: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting

2SK2169

Abstract: 2087a ITR02550 ITR02551 ITR02552 ITR02553 ITR02554 ITR02555 ITR02556 ITR02557
Contextual Info: 注文コード No. N 4 5 5 6 2SK2169 No. 三洋半導体ニューズ 2SK2169 特長 N4556 70999 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SK2161

Contextual Info: Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A

2SK2167

Abstract: BX-0113
Contextual Info: Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2167] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5