2SK369 Search Results

2SK36

Contextual Info: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)

2sk3699

Abstract: 2sk3699-01mr
Contextual Info: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: 2SK3690-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters

Contextual Info: 2SK3695-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3692-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3697-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators

K369

Abstract: TOSHIBA 2SK369 2SK369 field effect transistor
Contextual Info: T O S H IB A 2SK369 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ.

TOSHIBA 2SK369

Abstract: 2SK369 2SK3693
Contextual Info: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)

2SK3690-01

Contextual Info: 2SK3690-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

75V15

Contextual Info: 2SK3693-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: 2SK3694-01L,S,SJ 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features T-Pack High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators

TOSHIBA 2SK369

Abstract: K369 2SK369 "TOSHIBA" "2SK369" fa1210
Contextual Info: TO SH IBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High ¡Yfsi : iYfsi = 40mS Typ.

Contextual Info: TO SHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ. (VDS = 10V, V g s = 0, lDSS = 5mA)

2SK369

Contextual Info: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)

2SK3697-01

Abstract: MJ10
Contextual Info: 2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 Outline Drawings mm FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

transistor 2sk369

Contextual Info: TOSHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 69 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfs| = 40mS Typ. n r « n _ i m r

2SK3696-01MR

Contextual Info: 2SK3696-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2sk369

Contextual Info: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)

2SK3691-01MR

Abstract: 148mH
Contextual Info: 2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK369

Abstract: 01JA
Contextual Info: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs | = 40mS Typ.

2SK369

Contextual Info: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 40mS Typ. (VDS = 1OV, V g s = 0, IDSS = 5mA)

2SK3697-01

Contextual Info: 2SK3697-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

switching power supply schematic

Abstract: 2SK3698-01 equivalent
Contextual Info: 2SK3698-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply