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    2SK362 Price and Stock

    Toshiba America Electronic Components 2SK362-GR(F)

    N-CHANNEL, SI, SMALL SIGNAL, JFET, TO-92 (Also Known As: 2SK362-GR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK362-GR(F) 1,320
    • 1 $0.88
    • 10 $0.88
    • 100 $0.88
    • 1000 $0.352
    • 10000 $0.352
    		Buy Now
    2SK362-GR(F) 1,320
    • 1 $0.88
    • 10 $0.88
    • 100 $0.88
    • 1000 $0.352
    • 10000 $0.352
    		Buy Now

    2SK362 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK362 Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
    2SK362 Unknown FET Data Book Scan PDF
    2SK362 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
    2SK362 Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF
    2SK362 Toshiba Junction FETs Scan PDF
    2SK3628 Kexin N-Channel Power MOSFET Original PDF
    2SK3628 Panasonic TRANS MOSFET N-CH 230V 20A 3TOP-3F-B1 Original PDF
    2SK362BL Toshiba TRANS JFET N-CH -1.5MA 3(2-5F1D) Original PDF
    2SK362GR Toshiba TRANS JFET N-CH -1.5MA 3(2-5F1D) Original PDF
    2SK362Y Toshiba TRANS JFET N-CH -1.5MA 3(2-5F1D) Original PDF

    2SK362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk3622

    Abstract: TOSHIBA 2SK362 2SK362 2sk3624
    Text: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK362 2sk3622 TOSHIBA 2SK362 2SK362 2sk3624

    2SK3559

    Abstract: IDA-20
    Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal


    Original     		PDF 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 2SK3628 2SK3559 2SK3665 2SK3637 2SK3652 E00128AE IDA-20

    2SK3628

    Abstract: No abstract text available
    Text: Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 15.0±0.3 0.7 For hihg-speed switching 21.0±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage VGSS


    Original     		PDF 2SK3628 2SK3628

    2SK3625

    Abstract: K3625 K362
    Text: 2SK3625 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3625 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm z Low drain−source ON resistance: RDS (ON) = 65 mΩ (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF 2SK3625 2SK3625 K3625 K362

    Untitled

    Abstract: No abstract text available
    Text: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK362

    2SK3628

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3628 TO-263 1 .2 7 -0+ 0.1.1 Features High-speed switching Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2


    Original     		PDF 2SK3628 O-263 2SK3628

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFET 2SK3628 N-channel enhancement mode MOSFET High speed switching 0.7 Rating Unit Drain-Source breakdown voltage VDSS 230 V Gate-Source voltage VGSS ±30 V Drain current DC ID 20 A Pulse IDP 80 A EAS 570 mJ Allowable power Tc = 25 °C *2 dissipation


    Original     		PDF 2SK3628

    2sk3622

    Abstract: 2SK362
    Text: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK362 2sk3622 2SK362

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    2SK362

    Abstract: 2sk3624 2sk3622
    Text: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK362 2SK362 2sk3624 2sk3622

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 15.0±0.3 (0.7) For hihg-speed switching 21.0±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage


    Original     		PDF 2002/95/EC) 2SK3628

    2sk3624

    Abstract: No abstract text available
    Text: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK362 SC-43 2sk3624

    2SK3628

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For hihg-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage


    Original     		PDF 2002/95/EC) 2SK3628 2SK3628

    2sk3665

    Abstract: 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id
    Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal


    Original     		PDF 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 2sk3665 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    Untitled

    Abstract: No abstract text available
    Text: Siフォトダイオード 第 章 2 1 Siフォトダイオード 章 1-1 動作原理 1-2 等価回路 1-3 電流ー電圧特性 1-4 直線性 1-5 分光感度特性 1-6 ノイズ特性 1-7 感度均一性 1-8 応答速度 1-9 オペアンプとの接続


    Original     		PDF KPSDC0089JA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK362 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK362 Unit in mm FOR A U D IO AMPLIFIER, A N A L O G SW ITCH, CONSTANT CURRENT A N D .5.1 MAX. IM PEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : VGD g = —50V


    OCR Scan     		PDF 2SK362

    2SK362

    Abstract: No abstract text available
    Text: TOSHIBA 2SK362 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK362 FOR AUD IO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND Unit in mm IM PEDANCE CONVERTER APPLICATIONS 5.1 MAX. • High Breakdown Voltage : V Q D g = —50 V • High Input Impedance


    OCR Scan     		PDF 2SK362 SC-43 2SK362

    2SK362

    Abstract: No abstract text available
    Text: TOSHIBA 2SK362 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK362 FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND Unit in mm 5.1 MAX. IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : V j ß g = —50V • High Input Impedance


    OCR Scan     		PDF 2SK362 SC-43 2SK362

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK362 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 6 2 Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • 5.1 MAX. High Breakdown Voltage : V q d s = —50V High Input Impedance


    OCR Scan     		PDF 2SK362 --50V --30V) SC-43

    2sj111 fet

    Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
    Text: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)


    OCR Scan     		PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737