2SK372 Search Results

Contextual Info: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 Unit in mm FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • 4.2M AX. High Breakdown Voltage : VGDg = —40V High Input Impedance : IGg g = —l.OnA Max. (VGg = —30V)

2SK372

Abstract: VGS-30V
Contextual Info: TOSHIBA 2SK372 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 FOR AUDIO AM PLIFIER, ANALOG-SW ITCH, CONSTANT CURRENT AND Unit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2MAX. — High Breakdown Voltage : V q d s = —40V • High Input Impedance

K3723

Abstract: 2SK3723
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3

2SK372

Contextual Info: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog－Switch, Constant-Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3723

Abstract: K3723
Contextual Info: Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C

2SK3724

Contextual Info: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant-Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

K3723

Abstract: ic MARKING QG MARKING QG SMD IC MARKING NC 2SK3723 SMD Transistors nc
Contextual Info: Transistors IC SMD Type N-channel Enhancement Mode MOSFET 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching

2SK3720

Abstract: D1306
Contextual Info: 2SK3720 注文コード No. N 8 1 7 3 A 三洋半導体データシート 半導体ニューズ No.N8173 とさしかえてください。 2SK3720 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。

Contextual Info: 2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2SK372

Contextual Info: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog－Switch, Constant-Current and Impedance Converter Applications • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

450v 15a mosfet

Contextual Info: 2SK3725-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3728-01MR

Abstract: 2SK3728 2SK3728-01MR equivalent
Contextual Info: 2SK3728-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: Product specification 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 High avalanche resistance

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

2SK372

Contextual Info: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant-Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK372

Contextual Info: TOSHIBA 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR i <; k SILICON N CHANNEL JUNCTION TYPE 3 7 1 Unit in mm FOR AUDIO AMPLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • High Breakdown Voltage : V q d s = —40V TTicrVi Tnmit Tmr>prl»nr»p

2SK3720

Abstract: ENN8173A marking KA
Contextual Info: 2SK3720 Ordering number : ENN8173A N-Channel Silicon MOSFET 2SK3720 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

K3723

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3

2SK3722

Abstract: 2SK372
Contextual Info: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK372

Contextual Info: 2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3727

Abstract: power mosfet 600v
Contextual Info: 2SK3727-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK372

Contextual Info: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2 M AX. High Breakdown Voltage : V q b s = —40V High Input Impedance

Contextual Info: 2SK3720 Ordering number : ENN8173 N-Channel Silicon MOSFET 2SK3720 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter