2SK365 Search Results

2SK3658

Contextual Info: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK3654

Abstract: 2SK365
Contextual Info: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3559

Abstract: IDA-20
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

2SK365

Contextual Info: TOSHIBA 2SK365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK365 Unit in mm FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • High Breakdown Voltage High Imput Impedance Low RDs ON •

2sk3656

Abstract: MARKING CODE c5 sc-62
Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

2SK3656

Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

2SK3654

Contextual Info: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3654

Abstract: 2SK365
Contextual Info: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3653B

Contextual Info: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK3653B N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK3653B は，ゲート - ソース間にダイオードと高抵抗を内

2SK365

Contextual Info: TO SH IB A 2SK365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK365 Unit in mm FOR AUDIO AMPLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • High Breakdown Voltage High Imput Impedance • Low RDS ON

2SK3659

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3659

jeita sc-62

Abstract: 2SK3658 TR140
Contextual Info: 2SK3658 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK3658 ○ リレー駆動DC−DC コンバータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.23Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0S (標準)

D1629

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES

k3652

Abstract: k365 2SK3652
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 (4.5) Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Junction temperature

MARKING CODE c5 sc-62

Contextual Info: 2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

Contextual Info: T O SH IB A 2SK365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK365 FOR AUDIO AMPLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS Unit in mm 4 .2 M A X. • High Breakdown Voltage VGDS= - 50V • High Imput Impedance

2SK3653B

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.

Contextual Info: Transistors IC SMD Type Product specification 2SK3652 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching 2 .5 4 -0+ 0.2.2

d1889

Abstract: 2SK3653C marking EE
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653C contains a diode and high resistivity 0.2 time during power-on. In addition, because of its compact

2SK3652

Abstract: k3652 k365
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 V Gate-source surrender voltage VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 200

2SK3656

Contextual Info: 2SK3656 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3656 ○ VHF/UHF 帯電力増幅用 ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

2SK3650-01L

Contextual Info: 2SK3650-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply