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    2N2607 Price and Stock

    Solid State Devices Inc (SSDI) 2N2607

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    Bristol Electronics 2N2607 5 3
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    Quest Components 2N2607 4
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    Westinghouse Electric Corporation 2N2607

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    . 2N2607-82

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    Bristol Electronics 2N2607-82 3 2
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    Others JAN2N2607

    ELECTRONIC COMPONENT (Also Known As: 2N2607JAN)
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    Quest Components JAN2N2607 26
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    Vishay Siliconix JAN2N2607

    ELECTRONIC COMPONENT (Also Known As: 2N2607JAN)
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    Quest Components JAN2N2607 18
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    2N2607 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2607 Calogic P-Channel JFET General Purpose Amplifier Scan PDF
    2N2607 Intersil Shortform Data Book 1983/4 Short Form PDF
    2N2607 Intersil Data Book 1981 Scan PDF
    2N2607 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2607 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2607 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N2607 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2607 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2607 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2607 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2607 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2607 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N2607 Solitron Devices Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3... Scan PDF
    2N2607 Solitron Devices General Purpose P-Channel FETs Scan PDF
    2N2607JAN Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N2607JAN Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N2607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


    Original     		PDF BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 2N2648 BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601

    2SJ72BL

    Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
    Text: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m


    Original     		PDF 2N2500 2N3332 2N2498 2N3330 2N4089 UCS51 SMP3331 TMPF3331 TP3331 TMPF3820 2SJ72BL PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D

    2N2609

    Abstract: 2N2608 2N2607 "P-Channel JFET" 2N2807 JFET 50ma -40v P-Channel JFET jfet 2N
    Text: 2 N 2 6 0 7 -2 N 2 6 0 9 2 N 2 6 0 9 JAN P -C h a n n e l JF E T O ßfrSH O IL APPLICATIONS • Low-level Choppers • Data Switches CHIP TOPOGRAPHY PIN CONFIGURATION 5010 for 2N2607, 8 TO-18 4-, • Comm utators A B SO LU T E M A X IM U M R A T IN G S @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 2N2607 2N2609 2N2609JAN 2N2607, 2N2608 "P-Channel JFET" 2N2807 JFET 50ma -40v P-Channel JFET jfet 2N

    2N2608

    Abstract: 2N2609 2N2607 X2N2607 p-channel-jfet X2N2608 X2N2609 2N2607-2N2609
    Text: CALOGIC 1ÖM4325 MfiE D CORP OOOOSflb 1 I CGC caloric CORPORATION V 2N2607-2N2609 APPLICATIONS ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low-Level Choppers • Data Switches • Commutators G ate-Source V o lta g e . 30V


    OCR Scan     		PDF M4325 00DD2flt. T27-ZS 2N2607-2N2609 5510-2N2607, 5503-2N2609 10sec) 300mW 150cC 2N2608 2N2609 2N2607 X2N2607 p-channel-jfet X2N2608 X2N2609 2N2607-2N2609

    2n2607

    Abstract: 2N2608
    Text: CALOGIC CORP MAE D calocft WË 1ÔMM325 00002flb 1 • C6C P-ChannelJFET General Purpose Amplifier CORPORATION T-Z1-ZS V 2N2607-2N2609 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted APPLICATIONS • Low-Level Choppers • Data Switches • Commutators


    OCR Scan     		PDF MM325 00002flb 2N2607-2N2609 2N2609 2n2607 2N2608

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


    OCR Scan     		PDF 2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N2844

    Abstract: 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420
    Text: -Æ litra n Dev/ces. Inc. P -C H A N N E L J U N C T I O N FE T CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .02cr 0.508mm Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 508mm) 381mm) 0254mm) 2N2844 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


    OCR Scan     		PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


    OCR Scan     		PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    Untitled

    Abstract: No abstract text available
    Text: Pöä@E yj Tr ©^ t o [l ( P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " (0.508mm) Backside Contact: 3,OCX) À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 508mm) 381mm) 0254mm) UC400, UC410, UC420, 2N2607, 2N2608, 2N2609, 2N2842,

    2N4342

    Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
    Text: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883


    OCR Scan     		PDF PNPTO-66 000D137 J31QDE TRdf\J515T0R 30a/a) 2N3740 2N3766 2N3740A 2N3767 2N3741 2N4342 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


    OCR Scan     		PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    Untitled

    Abstract: No abstract text available
    Text: LOW PO W E R FIELD EFFE C T T R A N S IS T O R S Type Number Case Style T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (PF) Idss Vgs (off) Min Max (V) (nA) lgss Max (mA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0 10.0 10.0 0.9 0.9


    OCR Scan     		PDF

    2N2609

    Abstract: 2n2844 9TSS
    Text: P -C H A N N E L J U N C T IO N FET CHIP NUMBER [Ft? CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " 0.508mm} Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS V It is advisable that: Die Size: Pad Sim: a the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 508mm} 381mm) 0-S08 0254mm) 2N2609 2n2844 9TSS

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


    OCR Scan     		PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451

    2N2386

    Abstract: No abstract text available
    Text: raOEHyXgTr ÄTTÄIL LO W P O W E R FIELD EFFECT T R A N S IS T O R S m Typ« HvBttbsi \ U/AL [P O « ® ® ! •BVDgo or Ciss BVgss Style Min Max (T O - Geometry (pF) Cam (V) lgss Max (nA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0


    OCR Scan     		PDF 2N2386 2N2386A 2N2497 2N2498 2N2499 2N2500 2N2606 2N2607 2N2608 2N2609»

    2N3993A

    Abstract: FP22 to92 2N5265
    Text: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I


    OCR Scan     		PDF 2N2500 2N3332 2N3993A FP22 to92 2N5265