2N330 Search Results

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N3300

Contextual Info: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N3307 MOTOROLA

Abstract: 2N3307 2N3308 GE-17
Contextual Info: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

2N3301

Abstract: 2N330
Contextual Info: 2N3301 2N3302 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: 2N3308 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2n3300

Abstract: 2N3302 2N2218 2N3300 MOTOROLA
Contextual Info: MOTOROLA SC XSTR S/R F 15E D b3b7354 Q0âb350 4 | T 'X l-o i 2N3300 CASE 79-04, STYLE 1 TO-39 TO-205AD) 3 Collector M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage (Applicable 0 to 10 mAdc) VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc

2N1855

Abstract: 0E-18 2N1025 2n936
Contextual Info: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927

Contextual Info: 2N3307 Si PNP LP HF BJT 13.39 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N3307 Online Store 2N3307 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N3304

Abstract: 222Z 2N328A
Contextual Info: ENTRAL SEMICONDUCTOR □□□□SSI S r bl D PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE V V V min ma mA V 2N3250 2N3250A ‘ 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30 40 150 160 300 120 120 10 10

2N3302

Abstract: 2n3301
Contextual Info: SGS-THOMSON 2N3301 2N3302 R!tlD EæilLI(g'iri iD(SS GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and

Contextual Info: m 2N3307 \ \ PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3307 is Designed for General Purpose High Frequency Low Noise Amplifier, Mixer and Oscillator Applications. MAXIMUM RATINGS 50 mA lc -35 V ce P diss 300 mW @ Tc = 25 °C P diss 200 mW @ TA = 25 °C

2N3293

Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

Contextual Info: M axim um Ratings Type NPN Pd Am bient mW V cb Volts 2N3250 360 2N3250A VCE Electrical Characteristics @ 25°C V C E Sat @ l c / l B H re @ Ic Volts V eb Volts M in /M ax mA 50 40 5 50/150 360 60 60 5 2N3251 360 50 40 2N3251A 360 60 2N3299 800 2N3300 ft

Contextual Info: 30E ]> • 7^2^237 0031171 5 '" P 3 S - 1 S r z 7 SCS-THOMSON ^7# 2N3301 2N3302 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESC RIPTIO N The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2N328A

Contextual Info: ENTRAL bl SEMICONDUCTOR □□□□SSI D S r T -3 7 -a i PIMP M ETA L CAN - S A TU R A TED SWITCH Cont'd. TYPE Vc b VCE V eb hFE at •c VCE NO. V V V min ma mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30

2N3307

Contextual Info: 2N3307 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3307 is Designed for General Purpose High Frequency Low Noise Amplifier, Mixer and Oscillator Applications. 5O mA PACKAGE STYLE TO- 72 o m Ie < MAXIMUM RATINGS -35 V Pd is s 3OO mW @ Te * 25 0C

Contextual Info: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Contextual Info: L.1 ENTRAL SEMICONDUCTOR D I ITflTibB □□□□SSI S PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE >C fT C0b *on to ff V V V min ma mA V V mA MHz pF nS nS mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20

2N3294

Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

BF460

Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~: