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    Microchip Technology Inc 2N3848

    POWER BJT
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    2N3848 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3848 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
    2N3848 API Electronics Short form transistor data Short Form PDF
    2N3848 API Electronics Short form transistor data Short Form PDF
    2N3848 Diode Transistor Transistor Short Form Data Scan PDF
    2N3848 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
    2N3848 General Transistor NPN Power Transistors Scan PDF
    2N3848 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3848 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3848 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3848 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3848 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3848 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3848 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3848 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3848 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3848 New England Semiconductor NPN TO-53 / TO-114 Transistor Scan PDF
    2N3848 New England Semiconductor NPN Transistors, TO-63 / TO-114 Scan PDF
    2N3848 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N3848 PPC Products Transistor Short Form Data Scan PDF
    2N3848 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF

    2N3848 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3848 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)20 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N3848 Freq10M

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original
    PDF B440355 S4H03SS D00D11E 2N3265 2N3266 2N3597 2N3598 2N3599 2N3846 2N3847 to63

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original
    PDF B440355 S4H03SS D00D11E SPHV405 SPHV406 SPHV407 SPHV408 SPHV409 SPHV420 SPHV421 to63

    BDW16

    Abstract: SM3159 2N2753 str16 SM317 2U75 2N1826 BUV41
    Text: POWER SILICON NPN Item Number Part Number I C -5 10 15 20 30 35 40 45 50 -60 70 75 - 80 140 140 150 150 150 150 150 150 150 150 ~~6~~~~ ~e.!naex ~g ~~g 20 20 20 20 20 20 20 20 150 150 160 160 160 160 160 160 20 30 ~g ~~g 20 20 20 20 20 20 20 20 160 160 160


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    PDF MJ15003 RCA8638C SML8753 SML8757 2N1825 2N2125 2N2741 2N2747 2N2753 2N2817 BDW16 SM3159 str16 SM317 2U75 2N1826 BUV41

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


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    PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


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    PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    Untitled

    Abstract: No abstract text available
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N3055

    Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882

    Jan2N3055

    Abstract: No abstract text available
    Text: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100


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    PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 Jan2N3055

    2N5314

    Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F | d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN


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    PDF 0CH3592 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N5314

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746
    Text: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z


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    PDF fl2S40a2 2N3740 2N3741 2N3744 O-111 2N3745 2N3746 2N3747 2NXXXX SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3861

    2N1936

    Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111

    4010 IC

    Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
    Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)


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    PDF 0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266

    terminals of 2n3055

    Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 terminals of 2n3055 2N4211 TO111 package 2N5882

    AP1152

    Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 AP1152 2N4211

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    23487

    Abstract: 2N60G3 23472
    Text: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634


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    PDF STD60 NPN-19 23487 2N60G3 23472

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711