2N5021 Search Results

2N5021

Abstract: 2N5020 SMP5020 SMP5021 transistor 2n5020
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2N5021

Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
Contextual Info: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S

2n5020

Contextual Info: B 18 9 -9 7 2N5020, 2N5021 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maxim um ratings a t T * = 25°C • Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2n5268

Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
Contextual Info: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

J177. P-CHANNEL. TO-92

Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

G50433

Contextual Info: ALL E GR O MICROSYSTEMS INC 8 5 1 4 0 1 9 S P RA GU E. =13 ]> • G50433Û G G D 3 b l 7 1 ■ AL6R S E M I C O N D S / ICS 93D 03617 D T - zj? - z » s METAL-CASE JUNCTION FIELD-EFFECT TRA N SIST O R S P-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

UC451

Contextual Info: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2N5266

Contextual Info: ÄTTÄ[L LOW P O W E R FIELD E FFE C T T R A N S IS T O R S ¡[L ÄtMPOJFDIlKi Type Number Case Style (T O - Geometry BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3

Contextual Info: S P R A G U E / S E MI C Ô ND 8 5 1 4 0 1 9 SPR A G U E. GROUP =13 D • ÔS1 3ÔS G SEM IC O N D S/IC S DDQ3 L 17 T 93D 0 3 6 1 7 J ■ 7 I . ? 9 , 7 C METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS_ P-Channel JFETs General-Purpose Device Types

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2SJ72BL

Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m

TIS88A equivalent

Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.

2N4360

Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Contextual Info: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.

2N3993A

Abstract: FP22 to92 2N5265
Contextual Info: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I

Contextual Info: IN TE R 2 bE F E T CORP d • 4ö2baaa ooooiaa A2 T - 9 / - 6 Ô P-Channel JFETs |S | General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C VgSio»! Mm <>>ic V Max (nA) (V) 2N 2386 20 10 10 10 2N 2497 20 10 10 10 20 10 loss Mm imA| (VI (V)