2N5397 Search Results

2N5396

Abstract: 2n5397
Contextual Info: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage

2N5397 Texas

Contextual Info: TYPE 2N5397 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 4 , A U G U S T 1971 FO R V H F A M P L IF IE R A N D M IX E R A P P L IC A T IO N S • High Power Gain . . . 15 dB Min at 450 MHz • Low Noise Figure . . . 3.5 dB Max at 450 MHz

2N5397

Abstract: SMP5398 2N5398 SMP5397 1na30
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage

2N5397

Contextual Info: 2N5397 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5397 Availability Online Store

2N5397

Abstract: 2NS397 2N5398
Contextual Info: C A L OG I C 4ÖE CORP D 1Ô44322 G0 GG3 E 4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION V 2N5397 / 2N5398 calotfic • T-3>\-zS 2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Common Gate) at 450MHz

2N5397

Abstract: 2N5398 X2N5397 X2N5398
Contextual Info: CALOGI C CORP 4ÖE D 1 ÔH4 3 S2 GGGG3E4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION ' * _ 2N5397 / 2N5398 /<m Ia#i^î/< C Q IO O IC • T-^2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Comm on Gate) at 450MHz

2n4391, Voltage controlled

Abstract: sw 2n4093 2N5906
Contextual Info: -Ælitran Devices. Inc. knot? ¥ ©[i[L[i©¥ tFcnr© ^©[D yj(gir ©attæmkqx IN TRO D U CTIO N TO TH E F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is d esirable to have a high O N -O FF-ratio. It is also desirable to b e ab le to switch both

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

n-channel fet to-92

Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

Contextual Info: N-CH ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021“ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon prelonn 98/2%.

Contextual Info: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2N5911

Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
Contextual Info: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk

Digital Oscilloscope Preamp

Abstract: L6518S interfet L6518SQ LMH6518 LMH6518SQ LMH6518SQE LMH6518SQX SQA16A InterFET Corporation
Contextual Info: LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier General Description Features The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16 dB to 38.8 dB for a 40 dB range in 2 dB steps. The −3 dB bandwidth is 900 MHz

2N3684

Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
Contextual Info: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0

Contextual Info: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: LMH6518 www.ti.com SNOSB21C – MAY 2008 – REVISED JULY 2013 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Check for Samples: LMH6518 FEATURES DESCRIPTION • • • The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2N5397

Abstract: 2N5398
Contextual Info: E SOLI » □1 S T AT E D Ey3fl75aa]i cm:Lcm3 5 | 01E 3875081 G E SOLID STATE 10993 T - J / - * 2-T D N-Channel JF E T High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • G ps= 15dB Minimum Com mon Gate at 450MHz • L ow N oise • L ow Capacitance