2N5400 Search Results

2N5401

Abstract: transistor 2N5401 1N914 2N5400
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO

Contextual Info: 2N5400 S/S TR CD-ROM Edition.1.1 This Data Sheet is subject to change without notice. Page : 1 (2N5400) (C) 1994 Samsung Electronics Printed in Korea.

Contextual Info: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=-130V, VCEO=-120V H ・Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V

2N5401

Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Contextual Info: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

Contextual Info: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K Low Leakage Current. G D J : ICBO=-100nA Max. @VCB=-100V

2N5400

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5400 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCbo=-130V, VCeo=-120V • Low Leakage Current. : IcBo=-100nA Max. @VCB=-100V • Low Saturation Voltage

2N5401

Contextual Info: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

2N5401

Abstract: N5400 2N5400 MOTOROLA 2N5400
Contextual Info: Am plifier T ra n sisto rs 2N 5400 2N 5401* PNP Silicon "M otorola P referre d D evice COLLECTOR 3 Boca Semiconductor Corp. BSC 2 BASE 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N5400 2N5401 Unit VCEO 120 150 Vdc C o lle c to r-B a s e Voltage

2N5401

Abstract: 2N5400 10D3 2N5550 2N5551
Contextual Info: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

2N5400

Abstract: 2n5401
Contextual Info: 2N5400 2N5401* M AXIMUM RATINGS Rating Sym bol 2N5400 2N5401 Unit Collector-Emitter Voltage VcEO -1 2 0 -1 5 0 Vdc C ollector-Base Voltage v CBO - 130 -1 6 0 Vdc Emitter-Base Voltage VEBO -5 .0 Vdc Collector Current — C o ntin uou s 'c -6 0 0 m A dc Total Device Dissipation

2N5550 EBC

Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Contextual Info: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

2N5400

Abstract: CBVK741B019 F63TNR PN2222N
Contextual Info: 2N5400 2N5400 C B TO-92 E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage

Contextual Info: SEM IC O N D U C T O R 2N5400S TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L B L D IM FEATURES • High Collector Breakdwon Voltage 2.93 ± 0.20 B 1.3040.20/-0.15 C : V cbo=-130V, V ceo=-120V • Low Leakage Current.

Contextual Info: 2N5400 / 2N5401 2N5400 / 2N5401 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-12-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case

Contextual Info: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

2N5401

Abstract: 1N914 2N5400 2N5400 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N 5401* PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit C o lle c to r-E m itte r V oltag e Rating VCEO 120 150 V dc C o lle c to r-B a s e V oltag e

2N5551

Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
Contextual Info: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 4SE D • *10^7250 G G 1 7 7 b cl 3 ■ T0S 4 TOSHIBA TRANSISTOR_ SILICON PNP EPITAXIAL TYPE PCT PROCESS TOSHIBA 2N5400 (DISCRETE/OPTO) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown : VCBO=-130V,

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

2N5401

Abstract: 1N914 2N5400
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage

2N5457

Contextual Info: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage

2N5400

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5400 TRANSISTOR PNP TO-92 FEATURE Switching and amplification in high voltage z 1.EMITTER Applications such as telephony z Low current(max. 600mA) z High voltage(max.130v)

2N5400

Abstract: 2N5401
Contextual Info: 2N5400 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted