2N6802 Search Results

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790

JANTX2N6796

Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
Contextual Info: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6802, 2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

Contextual Info: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These

2N6802

Abstract: IRFF430
Contextual Info: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

2N6880

Abstract: 2N6798 JANTXV
Contextual Info: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These

MOSFET

Abstract: 2N6802
Contextual Info: t^ejm.l-donJ.uatot. tPioduati, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS D(cont)

Contextual Info: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N6802 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

2N6802

Abstract: 2N6802U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6802 2N6802U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6802

Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | b3b?25M GQöbbbö 0 | 2N6802 CASE 79-05, STYLE 6 TO-39 TO-205AF MAXIMUM RATINGS Symbol Value U nit Drain-Source Voltage Rating Voss 500 Vdc Drain-Gate Voltage (Rq s * 1 . 0 m il) Vd g r 500 Vdc Vg S Drain Current Continuous

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
Contextual Info: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These

DD 127 D transistor

Abstract: 2n6798u 2N6796U
Contextual Info: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR

2N7003

Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
Contextual Info: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0

2N6802

Abstract: transistor 6802
Contextual Info: 23 2N6802 H A R R IS N -Channel Enhancem ent-M ode Power MOS Field-E ffect Transistor August 1991 Package Features T 0 -2 0 5 A F • 3.5A, 500V B O T T O M V IEW • rDS on = 1-50 • S O A is Pow er-Dissipation Limited • Nanosecond Switching Spe eds • Linear Transfer Characteristics

2N6801

Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 2N6801 JTX, JTXV 2N6802 DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low R d s i o o i and a high transconductance.

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6802 2N6802U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: • 4305E71 0□ S3 7 Tti hi? m HAS g HARRIS 2N6802 N-Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 19 9 1 Features Package TQ-205AF m 0 *1.0 EA K fU W l * A , OUUV B O TTO M VIEW * rDS(on = 1 -s r i • SO A is Po w e r-D issip a tio n Lim ited

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

2n6152

Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
Contextual Info: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

2N7003

Abstract: 2N7011 2N7009 1N7003 2N7073 2N700I 2N6798 2N6799 2N6801 2N6802
Contextual Info: - 316 - m £ *± f * V Vd s or £ A * Vd g 11/ V £ (V) m (Ta=25°C> Vg s b Ig s s Pd * /CH * /CH (A) m (nA) V g s th) loss Vg s (V) Vd s (V) (HA) min max (V) (V) m ft Id OnA) & 14 CTa=25tl) I d (on) I Ds(on) Vd s = Vss Ciss g fs Coss Crss V g s “0 (max)