2SA608 E Search Results

2SA608

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage

2SA608

Abstract: TO92 LOW VCE PNP 2SA608 D
Contextual Info: 2SA608 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2SA608

Abstract: transistor 2sa608 2SA608 D
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES z Capable of being used in the low frequency to high frequency range. z Large current capacity and wide ASO. 1. EMITTER 2. COLLECTOR

2sa608

Abstract: transistor 2sA608 2SA608F 2SA608G 2SA608e 2SA608-E 2SA608-F 2SA608 C k 1 transistor 2SA608 D
Contextual Info: 2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO.

2SA608

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V

Contextual Info: 2SA608 2Plastic-Encapsulate Transistors PNP TO-92 Features Power dissipation PCM : 400 mW Tamb=25℃ Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

bc327 smd

Abstract: smd 2SA970 BC640 smd 2SB772 SMD AC188 bd140 SMD smd 2n2907a smd bc556b 2SA1309 BC327-40 SMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTpbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: Tok [A] BF324 BFT92 BF472 BF970 2SA1123 2SA1124 2SA1145 2SA1360 2SA949 2SA992 BF821 2SA1208 2SA1309 2SA1370 2SA1371E 2SA608 2SA733 2SA933

2SA608

Abstract: 2SC536 transistor 2sa608 2005A 2SA60 2SA608 D 2SA1782 2SA608KNP 2SA608NP 2SA608SPA
Contextual Info: SANYO S EM I CO ND UC TO R m 1 ;, j 35E CORP D • 7=n707t 0001180 T B T - 2 7 ' / r-: 2oo3A PNP Epitaxial Planar Silicon Transistors General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

sanyo 2033

Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
Contextual Info: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.

LM 2003A

Abstract: 2sa330 2SA331 2sa701 2SA44 2sa608 noise A659 2SA322
Contextual Info: SANYO « N u A pplications c S IS So G cu ci) E 0> W si a a> o c ¡13 O 8 <a CJ SW RF, IF - 2SA323 AM Converter 2SA324 FM IF Amp 2SA329 AM Converter, IF Amp A bsolute M axim um R atings/Ta=25°C v . V CII<) t v rKB V kho Ir P, T, imx) 1.5 15m 70m 85 -

SANSUI

Abstract: 2sc1175 STK1040 sansui transformer rp 22 8ohm LS 2SA984 equivalent STK series 40w amplifier 2SC2274 equivalent power transformer RP-25 sansui amplifier transformer
Contextual Info: STK1040 No.765 Thick Film Hybrid Integrated C ircu it SAN YO O utput S ta g e o f 40W min AF Power A m p lif ie r 4 0 04 Features ; No need for an external emitter resistance. . Design of the emitter resistance value has been studied in every respect, and excellent characteristics have been obtained.

bc 558 equivalent

Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015

LA1266

Abstract: LA1177 LA1266 HW-40131 giken LM7000 LA1177 hw 40131 HW-6146 HW-6145
Contextual Info: Ordering number : EN2291C Monolithic Linear IC LA1266 Electronic Tuning Type AM/FM Tuner System Features • Minimum number of external parts required. • Excellent S/N • Local OSC with ALC • Local OSC buffer • Tuning indicator pin common with narrow-band stop signal and muting drive output

LM7000

Abstract: HW-6146 MA3422 1kHz-75kHz la1266 hw 6146 capacitor NCE fm am 2291 2SA608 3067B
Contextual Info: Ordering number : EN2291C Monolithic Linear IC LA1266 Electronic Tuning Type AM/FM Tuner System Features • Minimum number of external parts required. • Excellent S/N • Local OSC with ALC • Local OSC buffer • Tuning indicator pin common with narrow-band stop signal and muting drive output

2SD1012

Abstract: 2SA608 transistor 2sa608 2SB808
Contextual Info: Ordering number:676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033 [2SB808/2SD1012] B : Base C : Collector E : Emitter : 2SB808 Specifications SANYO : SPA Absolute Maximum Ratings at Ta = 25˚C

2SB608

Abstract: 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60
Contextual Info: j Ordering number: EN 676D 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors N0.676D Low-Voltage Large-Current _ Amp Applications I2SB808 Absolute Maximum Ratings at Ta=25 C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

LA5587

Abstract: la557 LA5578
Contextual Info: Ordering number : EN2574E Monolithic Linear IC LA5587 General-Purpose Compact DC Motor Speed Controller Overview LA5587 is a general-purpose compact DC motor speed controller. Especially suited for controlling speed of a DC motor for tape-recorders, radio-cassettes, record-players and etc.

LA5587

Abstract: 73098HA 2SA608 2SD330
Contextual Info: Ordering number : EN2574E Monolithic Linear IC LA5587 General-Purpose Compact DC Motor Speed Controller Overview LA5587 is a general-purpose compact DC motor speed controller. Especially suited for controlling speed of a DC motor for tape-recorders, radio-cassettes, record-players and etc.

Contextual Info: | Ordering number: EN 6 7 6 P SA%YO i l _ 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors No.676D Low-Voltage Large-Current _Amp Applications : 2SB808 Ta=25 °C C o lle c to r to Base V o ltag e vCBO C o lle c to r to E m itte r V o ltag e

2SA616

Abstract: 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA603 -60 -8 -200 300 150 140 -1 -10 250* 7.5 2SC943 2SA604

2SD808

Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

2SC536E

Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter