2SA80 Search Results

2SA808

Abstract: 2SA80
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications.

2SA807

Abstract: 2SC1618
Contextual Info: SavantIC Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2

2SA808

Abstract: 2sa808a 2SA807 SAFT 2sa tr
Contextual Info: 2SA807, 2SA808, 2 S A 8 0 8 A Mis' a > P N P i t • Ta = 25°C) g m ¡e -t 2SA 807 2SA 808 2SA808A u 9 9 ■ •'<— XflCEE VcBO -60V -80V -100V 3 1 ' ? r i ; - ï ?H l /± VcEO -60V -80V -100V i V ebo —6V le -6A 3 ; y9 ■ 2. I t ff. 9 9W âL Xltift

Contextual Info: j tx , One, *_/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA808 DESCRIPTION • High Power Dissipation: Pc= 50W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage= -80V(Min.)

2SA821

Abstract: 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820
Contextual Info: £• tt A I P N P = J = * » » y u » - QUALITY RELIABILITY v Î j ï W Æ J T Ï h ^ V : Ï Physical Dimension (Ta=25°C) ! mm) (Absolute Maximum Ratings) is -§■ 3Ê -180 V CBO 2SA802, 2SA832 -130 2SA806, 2SA821 -210 V -130 -30 T stg 125 °C -5 5-1 2 5

e50p

Abstract: xiyi 2SA1558 2SA806 2SA806N
Contextual Info: I 40E i> m ROHM CO LTD 7 fl2 a *m ooDsaas a eirhm h V > V Z £ /Transistors 2SA806/2SA1558 .•■■■" 2 S Ä 8 0 6 “i ' 7 ^ 2 7 -0 7 V 'j3 > h 7 > y x ^ Voltage Amp. Epitaxial Planar PNP Silicon Transistors • ¿i-JfÎTHi 0 / D im e n s io n s Unit : mm

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

2SC1619

Abstract: 2SA808
Contextual Info: AOK AOK Semiconductor Product Specification 2SA808 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1619 APPLICATIONS • For power amplifier and general purpose applications PINNING see Fig.2

2sc1619

Abstract: 2SA808
Contextual Info: JMnic Product Specification 2SA808 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1619 APPLICATIONS ・For power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC1618

Abstract: 2sa807
Contextual Info: Inchange Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2

2SA807

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA807 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) APPLICATIONS ·Designed for general purpose applications.

CTX12S

Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

Contextual Info: b~7 > v 7* $ /Transistors 2SA806 2§A1 5 2SA806/2SA1558 5 8 Vo,ta9eAm p- Epitaxial Planar PNP Silicon Transistors • W fi\t">£|2|/Dim ensions U n it: mm 1) V CE R = - 2 1 0 V t ; i i i t H T '< f c - 5 o 2SA806 2SA1558 6.8±0.2 t f lL 'o • Features 1) H igh

2sa808

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications.

2sa808

Abstract: 2sc1619
Contextual Info: SavantIC Semiconductor Product Specification 2SA808 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1619 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2

2SA807

Abstract: 2SC1618
Contextual Info: JMnic Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1618 APPLICATIONS ・For power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

yx 801

Abstract: yx 801 ic 2SA1558 2sa155 801 yx 2SA806 2SA806N
Contextual Info: ROHM CO LTjD 4DE D 7 0 2 0 = *^ 00053Ô2 h 7 > y X $ //Transistors 2SA806/2SA1558 — 2SA806 IRHM A I k ° £ 3 - V W U 7 ° U - ; H f 2 P N P y i j q > 7 ^ 2 7 -0 7 h 7 > y X ^ IÎJŒ ® i±iilÎiffl/High Voltage Amp. Epitaxial Planar PNP Silicon Transistors

2SA807

Abstract: 2SC1618
Contextual Info: AOK AOK Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1618 APPLICATIONS • For power amplifier and general purpose applications PINNING see Fig.2

2SA884

Abstract: 2sa835 2SA823 2SA899 2SA810 2SA866 2SA840 2SA852 2SA855 2SA809
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SA801 2SA802 2SA803 2SA804 2SA805 2SA806 -20 -130 -130 -130 -180 -210 2SA807 -60 2SA808 -80 (V) (mA) (mW) -3 -5 -5 -5 -5 -5 -50 -30 -30 -50 -30 -30 Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE

Contextual Info: JEIIEU ^E-mi-L-onaactoi i-Pioaueki, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA807 DESCRIPTION • High Power Dissipation: Pc= 50W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage= -60V(Min.)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

5AW transistor

Abstract: 2SA80 2SA807 2SA81 2SA814 2SA815 2SA817 2SC1601
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SA143

Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SA143

Abstract: CK676 CK14A 2SA17 2N371 2N544 ck17a 2N370/33 2N544/33 2SA13
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,