2SB132 Search Results

Contextual Info: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter

2SB1325

Abstract: 2SD1999
Contextual Info: Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter.

2SB1324

Abstract: 2SD1998
Contextual Info: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and

2SB1323

Abstract: 2SD1997
Contextual Info: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.

LLO14

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping

2sb132

Abstract: 2A marking 2SB1324 2SD1998 ITR09586 ITR09587 ITR09588
Contextual Info: 2SB1324 / 2SD1998 Ordering number : EN3130A SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • • • • • Low saturation voltage. Contains diode between collector and emitter.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 0.15 ● Allowing supply with the radial taping. Large collector power dissipation PC. 600mW 1.0 ●

2SD2004

Abstract: transistor 2SD2004 T1052 2SB1328
Contextual Info: 2SD2004 Transistor, NPN Features Dimensions Units : mm available in MRT package 2SD2004 (MRT) high breakdown voltage, typically BVC E0= 160 V 6 5 ± 0.2 r~ high transition frequency and small output capacitance wide safe operating area (SOA) complementary pair with 2SB1328

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2SB1321A

Abstract: 2SD1992A
Contextual Info: Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW)

2sb1322

Contextual Info: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●

2SB1322A

Contextual Info: 2SB1322A 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

2SB1323

Abstract: 1V160 R1 marking
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1323 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,

Contextual Info: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

2SD1994

Abstract: 2SB1322 2SB1322A 2SD1994A
Contextual Info: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2SB1320A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1992A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1321A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

10PA

Abstract: 2SB1325 2SD1999
Contextual Info: Ordering number:EN3175 i SAXYO No.3175 2SB1325/2SD1999 PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage • Contains diode between collector and em itter • Contains bias resistance between base and emitter