2SB1454 Search Results

2sc2202

Abstract: 2sd2202 2SB14 2SB1454 D2202
Contextual Info: Ordering number: EN3249 sm Y o r No.3249 2SB1454/2SD2202 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F eatu res • Low collector-to-emitter saturation voltage • Large current capacity • Micaless package facilitating easy mounting

50V 100uf

Contextual Info: Ordering number:ENN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

2SB1454

Abstract: 2SD2202 ITR09739 ITR09740
Contextual Info: Ordering number:ENN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

2SB1454

Abstract: EN3249
Contextual Info: Ordering number:EN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

Contextual Info: Ordering number: EN3249 2SB1454/2SD2202 PNP/NPN Epitaxial Planar Silicon Transistors 80V/5A Switching Applications Features - Low collector-to-emitter saturation voltage • Large current capacity • Micaless package facilitating easy mounting : 2SB1454

2SB1454

Abstract: 2SD2202
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1454 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD2202

2SB1454

Abstract: 2SD2202
Contextual Info: SavantIC Semiconductor Product Specification 2SB1454 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2202 ·Low collector saturation voltage: ·Large current capacity APPLICATIONS ·High current switching applications

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1622

Abstract: 2SA1699 2sa1015 2SA1586 2s8817 2SA1162 2SA1638 2SA1782 2SA1018 2SB1198K
Contextual Info: m £ Type No. 2SA 1614 2SA 1615 , 2SA 1615Z 2SA 1616 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1617 16181619 1620 1621 ^ 1622 ' 1623 1624 1625 1626 1628 1629 1630 , 1631 1632 1633 ' 1634 1635 • 1636 1637

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

NEC 1357

Abstract: 1354 2SB817 sB1354 2sb941 2SB1376 2sb1015 2SB1132 2SA1561 2sb863
Contextual Info: m % Type No. 2SB 1353 2SB 1354 . tt a— A □ — Ja 2SB 2SB 2SB 2SB 2SB 2SB 1355 1356 1357 ^ 1358 1359 1360 a-A a— a 2SB 2SB 2SB 2SB 2SB 1361 1362 . 1363 1364 1365 & T tö T 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1366 1367 1368 1369 1370 1371 1372 1373 ^ ED

2SB873

Abstract: 948a 2SB1010 2S897 939-940 2SB1095 2SA1296 2SB1103 2SB 2SB B 947A 2SB1017
Contextual Info: - s « tt Type No. 2SB 922 2SB 922L 2S8 525 2SB 925A 2SB 2S6 2SB 2SB 2SB 2SB 926 J 927. 930 930A 93! 932 2SB 2SB 2SB 2SB 2SB 2SB 933 934 936 937 938 939 « Manuf. = m SANYO * 2 TOSHIBA S S NEC 2SA1227 S tL HITACHI * ± a FUJITSU te T MATSUSHITA h MITSUBISHI

2sd2229

Abstract: 2SD2191 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2192
Contextual Info: - 284 - m *+ 1-1 /u ^ u«UbU _ V 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2191 2SD2192 2SD2193 2SD2198 2SD2199 2SD2200 2SD2201 tfiT t&T t&T tar O— A O— A □— A Bi = # Hi# =#* — 2SD2203 2SD2209 2SD2210 2SD2213 2SD22U 2SD2215 2SD2215A

2SB1424

Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Contextual Info: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446

SB1232

Abstract: SD1238 2SD1237 10102D b1271
Contextual Info: sa U y o L o w S a t u r a t ion Voltage Ser ies T0-220, MF, ML Package A p p l i c a t i o n s ♦ R e l a y drivers. » H i g h - s p e e d inverters. »Converters. * High-current F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * F a s t

2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Contextual Info: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173