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    2SC3507 TRANSISTOR Search Results

    2SC3507 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC3507 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3507

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications


    Original     		PDF 2SC3507 2SC3507

    2SC3507

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS


    Original     		PDF 2SC3507 2SC3507

    2SC3507

    Abstract: No abstract text available
    Text: Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1000 V VCES


    Original     		PDF 2SC3507 2SC3507

    2SC3507

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ・For high-speed switching applications


    Original     		PDF 2SC3507 2SC3507

    2SC3507

    Abstract: No abstract text available
    Text: Power Transistors 2SC3507 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features 21.0±0.5 16.2±0.5 (3.5) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter


    Original     		PDF 2SC3507 2SC3507

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SC3507

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SC3507

    2sC3507 transistor

    Abstract: 2SC3507
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		PDF 2002/95/EC) 2SC3507 2sC3507 transistor 2SC3507

    2SC3507

    Abstract: IC1060
    Text: Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SC3507 2SC3507 IC1060

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SC3507

    2SC3507

    Abstract: *c3507
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original     		PDF 2002/95/EC) 2SC3507 2SC3507 *c3507

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


    Original     		PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2SC3507

    Abstract: No abstract text available
    Text: Power T ransistors 2SC3507 hTBEBiE DDlhHab Ü57 2SC3507 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit : mm • Features . 15.5max. 6.9min. • High speed switching • High collector-base voltage VCbo


    OCR Scan     		PDF 2SC3507 2SC3507

    800V PNP

    Abstract: 2SC3507 2SC3577
    Text: Power Transistors 2SG3577 bR3SaSE OOlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • High speed switching High collector-base voltage Vcbo Good linearity of DC current gain (Iife)


    OCR Scan     		PDF 2SG3577 2SC3507) 800V PNP 2SC3507 2SC3577

    2SC3824

    Abstract: 2SC4359
    Text: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D


    OCR Scan     		PDF T0-220 O-220F O-220E O-220D 2SD1274/A6 2SD1680* A2SC4986 2SC4687 2SC4621 2SC3872 2SC3824 2SC4359

    2SC3577

    Abstract: 2SC3507
    Text: Power Transistors b'iaSflSM □□lüûfc.O 31G • PNCE 2SC3577 PANASONIC IN]>L/ELEK SEm 2SC3577 b^E D Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching ■ Features • High sp eed sw itching • High collector-base voltage


    OCR Scan     		PDF 32aS4 2SC3577 2SC3507) 2SC3577 2SC3507

    2SB1632

    Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
    Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)


    OCR Scan     		PDF r0-220 -220F O-220E O-220D 2sd1274Ã 2sd1680* 2sc4986 2SC3403 2SC3825 2SC2841 2SB1632 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3527 2SC3528

    X9116WM8I-2.7T1

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type


    OCR Scan     		PDF -220F O-220E O-220D Z74/MB 2SC3210 2SC3171 2SC3527 2SC3285 2SC3506 2SC5156 X9116WM8I-2.7T1

    2SC5283

    Abstract: 2SC5157
    Text: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)


    OCR Scan     		PDF O-220F O-220E T0220D 2SD1274/A6 2SC3403 2SC3825 2SC3210 2SC3171 2SC3527 2SC3850 2SC5283 2SC5157

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202