2SC9 Search Results

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.

2SC994

Contextual Info: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DE t O ^ S S O CD I S C R E T E / O P T O bòC. 00D743D 5 | ~ 07430 D 2SC994 SILICO N NPN E P IT A X IA L PLAN AR TYP E Unit in nan VHF BAND POWER AMPLIFIER APPLICATIONS /2fa39MAX. ,08.4 5 MAX FEATURES : • Output Power !

2SC982TM

Contextual Info: 2SC982TM 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (ダーリントン接続) 2SC982TM ○ プリンタードライブ, コアドライブ, LED ドライブ用 ○ 低周波増幅用 • 単位: mm 直流電流増幅率が高い。: hFE (1) = 5000 (最小) (IC = 10 mA)

equivalent of transistor 8050

Abstract: 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC621 HN / BC 548 / 9014 2SC754 HN / BC 548 / 9014 2SC950 HN / BC 548 / 9014 2SC622 HN / BC 548 / 9014

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DISCRETE/OPTO M ^ I O ^ S D 00D743D 2 | ~ bòC D 07430 2SC994 SILICON NPN EPITA X IA L PLANAR TYPE Unit in nun VHF BAND POWER AMP LI F IE R A PP LICATIONS . FEATURES 0 S .Z 9 U A X . J# 8 .4 5 M A X : Output Power

2SC908

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC908 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC908 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on UHF band mobile radio applications. Dimensions in mm

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

TRANSISTOR 2Sc945

Abstract: 2SC945 Y 2SC945G 2SC945-GR
Contextual Info: MCC TM Micro Commercial Components 2SC945-Y 2SC945-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

2sc9013

Abstract: SS9012 14-EC
Contextual Info: Transistors 2SC9013 USHA INDIA LTD 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • High total pow er dissipation. (PT-625mW) • High C ollector Current. (lc = 500mA) •Complementary to SS9012 •Encellent hFE linearity ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

tl 271

Abstract: 2SC1815 2SC2926 2SC290B 2SC1923 2sc1959 2SC1907 288a 2SC266B 2SC828
Contextual Info: ft §y £ Type No. € = Manuf. SANTO m Ä 2 TOSHIBA m. NEC B HITACHI tL * ± a FU JITSU fé T MATSUSHITA m h MITSUBISHI □ — A ROHM * 2SC 251A n 2SC941TM 2SC1215 * 2SC1923 2SC1215 2SC2926 2SC1923 2SC1215 2SC2926 2SC 252 ^ a m * 2SC 253 * 2SC 260 ✓

2SC945-Y

Abstract: 2SC945Y 2SC945 transistor 2SC945 Y 2SC-945Y
Contextual Info: MCC 2SC945-Y 2SC945-GR TM Micro Commercial Components   !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150 OC

2SC937

Abstract: 2C25A
Contextual Info: 2SC937 y U □ > NPN S ILIC O N NPN T R IP L E D IFFU SED h 7 > X l / X TV T R A N S L E S S T V H O R IZ O N TA L D E F L E C T IO N O U TPU T 1. — X '•Ba s e 2 . x = -y ^ l E m itte r 3. u u 7 f • C o ll e c t o r C ase (D im ensions in mm) (JE D E C T O -3 )

2SA571

Abstract: 2SC97A swiching TC5A high frequency amplifier TO-205MD
Contextual Info: r 2SC97A 2SC97A ij ^ NPN V h 7 > v > T . ? / N P N SILICON EPITAXIAL TRANSISTOR High Speed Switching, High Frequency Amplifier H f l H f f l/ln d u s t r i a l Use £ ^/FEATURES •800mA < tV 'iT 'C O iS JS X 'i f- v Large current high speed swiching. •

transistor 2sc945

Abstract: 2sc945 VCE-60 2SC945 transistor transistor NPN 2sc945 transistor2sc945 PA33 43b transistor 2sc945 npn transistor NEC NPN 2sc945
Contextual Info: NEC DESCRIPTIO N NPN SILICON TRANSISTOR 2SC945 The 2SC945 is designed for use in driver stage of A F amplifier PACKAG E D IM E N SIO N S and low speed switching. in millimeters inches 5.2 MAX. FEA TU RES • High Voltage L V q E O : 50 v M I N - • Excellent hpE Linearity

TO-92B

Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA­ RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55

2SA733

Abstract: TRANSISTOR 2Sc945 2SC945 DATASHEET 2SC945 st 2SC945 transistor symbol st 2SC945
Contextual Info: ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended.

Contextual Info: MCC TM Micro Commercial Components 2SC945-Y 2SC945-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A

2SC982TM

Contextual Info: 2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications Unit: mm High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA) : hFE (2) = 10000 (min) (IC = 100 mA)

2SC941TM

Abstract: 2SC941-0 2SC941-R 2SC941-Y
Contextual Info: TO SH IBA 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC941TM HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 5 1 M AX AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)