2SD126 Search Results

2SB942

Abstract: 2SB942A 1267A
Contextual Info: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

2SB940

Abstract: 2SB940A
Contextual Info: JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS ・For power amplification

2SB941

Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Contextual Info: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

2SB944

Abstract: 2SD1269
Contextual Info: JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN

2SD1261

Abstract: NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A
Contextual Info: P o w er T ra n s is to rs 2SD1261, 2SD1261A 2SD 1261, 2S D 1261A P ackage Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max I— 8.7 max. U m ax. 6 .5 max. Pow er Amplifier C om plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A

2SB940

Abstract: 2SB940A 1264a
Contextual Info: Inchange Semiconductor Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS

transistor 12v 1A NPN

Abstract: 2SB941 2SD1266
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941

2SD1264

Abstract: 2SB940 2SB940A 2SD1264A IC vertical panasonic
Contextual Info: Pow er Tra n sisto rs 2 S D 1 2 6 4 , 2SD1264, 2SD1264A 2 S D 1 2 6 4 A Silicon NPN Triple-Diffused Planar Type Package Dim ensions A F Pow er Amplifier T V vertical Deflection Output Com plem entary Pair with 2SB940, 2SB940A U n it ! mm 4.4m ax. _10.2m ax.

2SB0942

Abstract: 2SB0942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc

2SB0944

Abstract: 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB940

Abstract: 2SB940A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1264/1264A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC · APPLICATIONS

2SD1266

Abstract: 2SB941 2SB941A 2SD1266A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A

2SB0939

Abstract: 2SB0939A 2SB939 2SB939A 2SD1262 2SD1262A
Contextual Info: Power Transistors 2SB0939, 2SB0939A 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A –60 VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A dissipation

2SB0938

Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current

2SD1265 equivalent

Abstract: 2SD1265
Contextual Info: 2SD1265 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Parameter Collector-base voltage (Emitter open) 16.7±0.3 Symbol Rating Unit VCBO 350

Pc6-080

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type darlington Unit: mm Collector-base voltage (Emitter open) 2SD1262 VCBO 2SD1262A Unit 60 V 2 80 Collector-emitter voltage 2SD1262

2SD1261

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SD1264

Abstract: 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A
Contextual Info: Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB0940 2SB940 and 2SB0940A (2SB940A) ● • Absolute Maximum Ratings (TC=25˚C) Parameter

2SB937

Abstract: 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C

2SB0937

Abstract: 2SB0937A 2SD1260 2SD1260A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 2SD1260 Symbol Rating Unit VCBO 60 V 2SD1260A 80 Collector-emitter voltage 2SD1260