2SD2166 Search Results

Contextual Info: 2SD2166 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

Q451

Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
Contextual Info: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac­

2sd2166

Abstract: oc sc62
Contextual Info: T r a n s is to r s • 7 f l 2 f l 1 1 cì O G lbTG a b lT ■ LOW VcE sat TrànSÌStOr(Strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 #F eatures 1) •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) (I c / I b = 0.25V (Typ.) 2SD2098 = 4A/0.1A)

2SD209B

Contextual Info: Transistors Low VcE sat Transist0r(strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F eatu re s 1) •E xte rn a l dimensions (Units: mm) L O W VcE(eat). VcE(sat) = 0.25V (Typ.) ( I c / I b = 4A/0.1 A) 2) Excellent DC current gain charac­ teristics. 3) Complements the

2SB1436

Abstract: tc255 2SD2166 f-30MHz
Contextual Info: SavantIC Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION

transistor

Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
Contextual Info: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

2SD2098

Abstract: D204 2SD2166 2SB1386 2SB1436 d204 transistor sit transistor 2SB1412 2SD2118 2SB1326
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

2SB1412

Abstract: 2SB1386 2SB1326 transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204 2SD2097
Contextual Info: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

2SB1436

Abstract: 2SD2166 VCB-20V
Contextual Info: Inchange Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

2SD947F

Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

Contextual Info: Transistors C P T • T O - 1 2 6 • T O -1 2 6 F P CPT SC-59 is also available as automated, surface mounted type by adding F5 to the part number (see page 77). TO-126FP is a direct mounting type, allowing simple assembly without additional insulator.

2SB1436

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2SB1386/2SB1412/2SB1326/2SB1436 • F e a tu re s 1) •E xtern a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = —0.35V (Typ.) (I c / I b = -4 A / -0 .1 A ) 2) Excellent D C current gain charac­ teristics.

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2SD636

Abstract: SN1402 RT1N141C DTC124ES DTC114ES UN4211 DTC114EK RT1N441S DTC144ES 2SC2456
Contextual Info: - 162 - s « Type No. a « Manuf. = 3 SANYO 5 TOSHIBA m. NEC B H HITACHI S f FUJITSU i & T MATSUSHITA £ m MITSUBISHI □ — A ROHM 2SC 3398 = Ì* SN1402 UN2211 RT1N141C DTC114EK 2SC 3399 ^ h m RN1204 UN4213 RT1N441S DTC144ES H if RN1203 UN4212 RT1N241S DTC124ES

2SB1436

Abstract: 2SB1306
Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 S B 1 3 8 6 /2 S B 1 4 1 2 /2 S B 1 3 2 6 /2 S B 1 4 3 6 •Fe a tu re s 1) ^External dimensions (Units: mm) LOW VcE(sat). V C E(sal) = -0.35 V (Typ.) (Ic / I b = -4 A / -0 .1 A ) 2) Excellent DC current gain charac­

L7605

Abstract: 2SD947F 2sc4137 2SB1423 2sa1775 transistor 2SB1516 2SB1007 2SB1009 2SB1065 2SB1086
Contextual Info: Transistors CPT • T O -1 2 6 • T O -1 2 6 FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number (see page 77) . TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F