2SK219 Search Results

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

Contextual Info: V X - n ^ U - X 7 t 7 - MOSFET s t& VX-H SERIES POWER MOSFET O U T L IN E DIM ENSIONS 2SK2190 FP10W50VX2 5 0 0 v 1 0 I ¡¡È fë li a RATINGS Absolute Maximum R atings II Item s n- iE ft sfe Symbol s C onditions + Y* KU' f ^ • V — X D rain -S o u rce Voltage

FP20W50VX2

Abstract: FP20W50 2SK2197
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2197 FP20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack ITO-3P (Unit : mm) 500V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

F20W50VX2

Abstract: 2SK2196 F20W50 F20w mosfet 20A 500V
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 500V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2192

Abstract: F12W50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2192 F12W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2194

Abstract: F15W50VX2 400VDS
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2194 F15W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 15A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2193

Abstract: FP12W50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P FP12W50VX2 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.

2SK2198

Abstract: F30Z50VX2 500V30A
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2198 F30Z50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3L E-pack Case (Unit : mm) 500V 30A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

diode 6A 100v

Abstract: 2SK2191 F12S50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2191 F12S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 12A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2194

Abstract: F15W50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2194 F15W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 500V 15A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 FP12W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

BFW 10 fet

Abstract: BFW 10 A FET
Contextual Info: V X -H » U -X r t ö - MOSFET VX-n SERIES POWER MOSFET W féT Î-âs0 O U T L IN E D IM E N S IO N S 2SK2190 F P 1 0 W 5 0 V X 2 500V 10a • fëfàm R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item s K # m Symbol fSffäm . Storage Temperature

Contextual Info: VX -ïïv'J-X / 19-MOSFET VX-n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S Case I IT 0 -3 P 2SK2197 FP20W50VX2 500V 20a • R A TIN G S ■ A bsolute Maximum Ratings m id u > • f V - ■ v ■c T ch 150 "C V dss 500 V Vg ss ±30 V DC Id 20 A Peak

N channel Mosfet 15A 500V

Abstract: F30Z50VX2
Contextual Info: V X -ïïv U —X A 1?—MOSFET W A 7 > 'fV * > '7 V X -iï SERIES POWER MOSFET O U T L IN E D IM E N S IO N S Case ! MT0-3L 2SK2198 2 0 . 5 >IAX F30Z50VX2 a 3 . 3 = »2 5.2M -« 'il 500v 30a D a te cod e r, "- 3 0 EIAJ No. ^2SK2198 T7 2.5MAX y. 3 . 5MAX

Contextual Info: V X -D v U -X / 1 9 -M O S F E T V X -n SERIES POWER MOSFET W W B -st& M O U T L IN E D IM E N S IO N S 2SK2193 FP12W 50VX2 500v 12a fefeM • R A T IN G S ■ A b s o lu te M axim um R a tin g s II Item s IS C h a n n e l T e m p e ra tu re KU < > • v - x f lh

2SK2191

Abstract: F12S50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2191 F12S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

FP10W50VX2

Abstract: 2SK2190
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2190 FP10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2sk2195 mosfet

Abstract: 2SK2195 FP15W50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2195 FP15W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 15A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2196

Contextual Info: V X -ïïv'J—X W -M O S F E T VX-n SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S C ase : M T 0 -3 P 2SK2196 F20W50VX2 5.0 ^ 03 500V 20a 2.0±03 2.4 ± D-3 0.65 ± ° 2 ■y'' fèfèm ■ [U n it ’ mm] R A TIN G S Absolute Maximum Ratings II

Contextual Info: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C

500V12A

Contextual Info: V X -Iv 'J-X /17-MOSFET VX -n SERIES POWER MOSFET W £ \H £ E ] O U T L IN E D IM E N S IO N S 2SK2193 FP12W50VX2 500v12a • R A TIN G S A b s o lu te M axim um R a tin g s m Item @ -V 7' Channel Temperature K U 4 > ■ v —x W ±Drain-Source Voltage

Contextual Info: C H A R A C TE R IS TIC S • N -f- ji > / n> X ^ > hfti| 0 9 N-channel, enhancement structure. • A C i s s ¡Jf/h il» . 9 Low input capacitance. Particularly low in the zero bias. • + 9 Low on-state resistance. Example ' It is 0.7f2(m ax.) at 2SK2192,

FP20W50VX2

Abstract: 2SK2197
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2197 FP20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.