2T SOT Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T

MMBT4403

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

smd marking cb SOT23 transistor

Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

smd transistor 2T

Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2T B E SOT-23

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

AN9006

Abstract: SOT23 MARK Y3 C2N4403 2n4403
Contextual Info: 2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 B SOT-23 E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G

ixys dsei 2x30-06c

Abstract: ixys dsei 2x30-05c
Contextual Info: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060

transistor d 1991 ar

Contextual Info: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

BTX94

Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
Contextual Info: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.

Contextual Info: 2N4403 Discrete POW ER & Signal Technologies SEMICONDUCTOR / MMBT4403 2N4403 MMBT4403 SOT-23 Mark: 2T PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l p u rp o s e a m p lifie r a n d s w itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

PD70320

Abstract: UPD70320GJ UPD70320L-8 uPD70108 MPD70320 ACE SC CSA10.0MT shs-40 70116c stm cl-11
Contextual Info: z r — S 7 • is — S MOS M O S Integrated Circuit ¿uPP7 0 3 2 0 V25 16/8 t f "S h • > > 9 /¿PD70320 m #V25 7 7° (i, 161'-y hCPU, RAM, > h n - 7 Ì f 1 -f- flj h • •vf 9d7dì ÿ ')7 'W -i^ 7 i-X , tzis >7 Ki- ■y-t//PD70108/70116 (SiJ«#V20™/V30™)

Contextual Info: BYV118F SERIES SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. Their electrical isolation makes them ideal for mounting on a common heatsink alongside other components w ithout

14.3f

Contextual Info: BYV143F SERIES y v. SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage platinum -barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical

sot-23 Marking 2T E

Abstract: MMBT4403LT1 2t sot MARKING 2T SOT23 TRANSISTOR
Contextual Info: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , I N C 7QS1 G A 1 1 1 0 E Figure 1. Block Diagram VDD CLKIN FBIN SO TO GND Multi-Phase Clock Buffer Features • Zero-propagation-delay clock buffer » Output skew controlled to ±250 ps typ. , ± 500 ps (max.) TriQuint’s GA1110E is a low-skew TTL-level clock buffer chip with multi­

mullard bt151

Abstract: BT151 BT151F M8515 Mullard circuit bt151 thyristor Curve
Contextual Info: BT151F SERIES J V_ FULL-PACK THYRISTORS Glass-passivated thyristors in SOT-186 envelopes, incorporating electrical isolation between the seating plane and all three terminals. Applications include temperature control, m otor control, regulators in

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4403LT1 1. BASE TRANSISTOR（PNP ） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W （Tamb=25℃） Collector current ICM : -0.6