3906 2N Search Results

2N3905

Abstract: 2N3906 transistor 2N3905
Contextual Info: 2N3905/3906 2N3905/3906 General Purpose Transistor • Collector-Emitter Voltage: VCEO=-40V • Collector Dissipation: PC max =625mW PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted TO-92 1 1. Emitter 2. Base 3. Collector

2N3906

Abstract: 3906 2n3906 equivalent transistor transistor 2N3906 datasheet 2n3906 equivalent transistor 2N3906 2n3906 datasheet data sheet transistor 2n3906 3906 2n 2N3906 diode
Contextual Info: SEMICONDUCTOR 2N3906 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906 K 3 No. Item 816 2 4 Marking Description 2N Series Name 3906 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year

3906 pnp

Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
Contextual Info: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -

2N3906 MICRO ELECTRONICS

Abstract: 3906 pnp 2N3903 2N3904 2N3905 2N3906
Contextual Info: 2N3905 2N 3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS _ . THE 2N3905 AND 2N3906 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLEMENTAHT TO 2N3903 AND

transistor pnp 3906

Abstract: transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 2N3906 3906 pnp 3906 TRANSISTOR
Contextual Info: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: Veto* 40V • Collector DiMipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage

n3904

Abstract: 2N3904 die 2N3904 2N3906
Contextual Info: 2N3904 VISHAY NPN SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N 3906

2N3906

Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
Contextual Info: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage

2n4125 equivalent

Abstract: 2N4125 transistor 2N4125 3906 TO-92
Contextual Info: 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum Ratings* Symbol

2N3906

Abstract: 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906
Contextual Info: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

d 772 transistor

Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain
Contextual Info: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.

Contextual Info: SEM ICONDUCTOR 2N4125 . TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 pA to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum RatinQS

3904

Abstract: NPN transistor 2n 3904 transistor 3904 2N 3904 transistor TRANSISTOR 2N 3904 tr 3904 2N3904 3904 TRANSISTOR PNP 1/2N 3904 3904 TRANSISTOR npn
Contextual Info: HN/2N 3903/3904 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors HN / 2N 3905 and HN / 2N 3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92

2N3906

Abstract: 2n3905 tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor
Contextual Info: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Cotlector-Em itter Voltage: V c e o “ 4 0 V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA- 2 5 t ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

lm 3904

Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
Contextual Info: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications

Contextual Info: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N 3906* PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO 40 V dc C o lle c to r-B a s e V oltag e

2N4125

Contextual Info: S E M IC O N D U C T O R 2N4125 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 xA to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Màximum RStinQS

2n4125 fairchild

Abstract: st 2n 3906
Contextual Info: S E M IC O N D U C T O R 2N4125 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 |^A to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum RâtinÇjS

2n2646 ujt

Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
Contextual Info: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0

2N41

Contextual Info: s e M I C O N P U P T O ^ -Sii MMBT4126 2N4126 * S O T -2 3 Mark: ZF B PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents to 10 |aA as a switch and to 100 m A as an am plifier. Sourced from Process 66. See 2N 3906 for

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

t1d6

Abstract: PN3906 t1d6 transistor RXT3904 SST3904 UMT3904 SPEC-C37 r1a transistor 2N3904 MMST3904
Contextual Info: Transistors I NPN General Purpose Transistor UM T3904/SST3904/M M S T3904/R XT3904/2N 3904 • F e a tu re s • E x te r n a l d im e n s io n s U n its : m m 1 ) B V ceo < 4 0 V (lc = 1 m A > 2 ) C o m p le m e n ts th e U M T 3 9 0 6 /S S T 3 9 0 6 /M M S T 3 9 0 6 /R X T 3 9 0 6 /P N 3906.

TR 3906 PNP SM

Abstract: N3906 2N3906-G 2N3905
Contextual Info: NEC PNP SILICON TRANSISTORS ELECTRON DEVICE 2N3905,2N3906 GENERAL PURPOSE SW ITCHING AND AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR 2 DESCRIPTION The 2N 3905, 2N3906 are PNP transistors, designed for general purpose switching and amplifier application, feature

st 2n 3906

Abstract: 2n390 2N390S 2N3906 2N3905 MOTOROLA 2N3906-O 3906 2n 2N3906TF 2N3905 3906
Contextual Info: M A XIM U M RATINGS Symbol Value Unit C o lle c to r -E m itte r V o lta g e VCEO 40 Vdc C o lle c to r-B a s e V o lta g e VCBO 40 V dc E m itte r-B a s e V o lta g e Vebo 5.0 Vdc 'c 200 m Adc Pd 625 mW m W /°C Rating C o lle c to r C u rre n t - C o n tin u o u s