2N390 Search Results

2N3904

Contextual Info: DC COMPONENTS CO., LTD. 2N3904 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector

ADM1033 D

Abstract: fs5 mosfet 1404D
Contextual Info: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

transistor 2n3906

Abstract: PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2n3906 PNP transistor DC current gain transistor2n3906 PNP TRANSISTOR SOT54 2n3906 specification 2N3904 2N3906 switching transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching in industrial applications.

tr 2n3906

Abstract: 2N3906 2N3906 plastic 2N3906 die marking k3 pnp
Contextual Info: 2N3906 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available

2n3904 225

Abstract: 2N3904 2N3904 die
Contextual Info: 2N3904 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906

2n3904 npn

Abstract: 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904
Contextual Info: UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

2N3906L

Abstract: 2N3906-G 2N3906L-T92-K
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc MAX =625mW * Complementary to UTC 2N3904 1 TO-92 „ ORDERING INFORMATION Ordering Number

2N3906

Contextual Info: DC COMPONENTS CO., LTD. 2N3906 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector

PN4122

Abstract: 2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4917 2N3906 TO-92
Contextual Info: This PNP Transistors Material PNP General Purpose Amplifiers and Switches continued V Copyrighted Device No. Case Style 2N3905 TO-92 (92) By 2N3906 TO-92 (92) CBO V CEO V (V) Min (V) Min (V) Min 40 40 5 40 40 V CE(SAT) ’c es* EBO 'C B 0 @ V CB (nA) Max

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

2N3906

Abstract: 2n3906 sot23
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3906 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N3906L-AB3-R

2N3906RL1

Abstract: 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 3906 TO-92 2N3906 ON 2N3906 pin diagram
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

2n3904 npn fairchild

Abstract: 2N3904 KSP6520 KSP6521
Contextual Info: KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC max =625mW • Refer to 2N3904 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: Maximum Ratings Type No. VCBO ^CEO VEBÓ Electrical Characteristics Ta=25"C, Unless Otherwise Specified - (V) Min (V) Min (V) Min Pd 'c <W) (A) 6Tc=25°c 2N3702 40 25 5 0.625 0.6 2N3905 40 40 5 0.625 0.2 IcBO ^CB tas VCE (mA) e (V) (mA) 0 (V ) Max Max Min

2N3906V

Abstract: 2N3904V 1N916
Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current G A 1 H @VCE=30V, VEB=3V. D 2 : ICEX=50nA Max. , IBL=50nA(Max.) 3 K Excellent DC Current Gain Linearity.

2n3906 equivalent transistor

Abstract: data sheet transistor 2n3906 transistor 2N3906 datasheet transistor 2N3906 PNP 2N3906 2N3906 PNP 2n3906 specification 2n3906 datasheet 2n3906 equivalent 2N3906
Contextual Info: 2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 ƔFEATURES 2 BASE . Power Dissipation 1 EMITTER PCM: 625 mW Ta=25к 1 2 . Collector Current 3

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

2N3904U

Abstract: ZC12 2N3904 zc marking
Contextual Info: SEMICONDUCTOR 2N3904U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZC 1 2 Item Marking Description Device Mark ZC 2N3904U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage