3BT PNP Search Results

Contextual Info: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers

transistors BC 23

Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
Contextual Info: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495

BFQ34T

Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Contextual Info: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in

transistor 3bt

Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
Contextual Info: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface

transistor 3bt

Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
Contextual Info: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,

Contextual Info: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation

727 Transistor power values

Abstract: transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor BC856BW
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W; BC858W FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 80) 1 • S-mini package. 2 emitter 3 collector base APPLICATIONS • General purpose switching and amplification.

marking 3ft sot323

Abstract: BC856BW BC846W BC847W BC848W BC856AW BC856W BC857AW BC857W BC858W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W; BC857W; BC858W PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 07 Philips Semiconductors Product specification

Contextual Info: TIP41 ;A TIP41B;C PHILIPS INTERNATIONAL SbE D • 7110asb 00H3S1Ô ^3^ ■ PHIN T -3J- H SILICON EPITAXIAL B A SE PO W ER TR A N SIST O R S N PN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP 4 2 series.

BCW61RA

Abstract: bcx71 bcx71rh BCX71C BCW60
Contextual Info: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

BC250A

Contextual Info: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura­

TIP41 amplifier

Abstract: TIP41 of TIP41 TIP41B TIP42 TIP42 ST TIP42 philips T-33-H
Contextual Info: TIP41 ;A TIP41 B;C PHILIPS INTERNATIONAL SbE ]> • 711Dä2b 0043510 W HPHXN~ T -J J -M SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP42 series.

BCX71RG

Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
Contextual Info: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

MPS3638

Abstract: MPS-3638A MPS3638A
Contextual Info: MPS3638, A M A XIM U M RATINGS Symbol Rating Value U nit Collector-Emitter Voltage v CEO -2 5 Vdc Collector-Emitter Voltage VCES -2 5 Vdc Collector-Base Voltage v CBO -2 5 Vdc Emitter-Base Voltage v EBO - 4 .0 Vdc Collector Current — Continuous ic -5 0 0

Contextual Info: DABIC-1% 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS The A 6809- and A 6810- devices combine 10-bit CMOS sWft registers, accompanying data latches and control circuitry w tih jH ro la r sourcing outputs and pnp active pull downs. Designed p r im lm p » drive vacuum-fluorescent displays, the 60 V and -40 i^ f c p b ^ r a t i n g s

BC857BW-3FT

Abstract: BC856BW TRANSISTOR 3gt BC846W BC847W BC848W BC856AW BC856W BC857AW BC857W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W; BC857W; BC858W PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 07 Philips Semiconductors Product specification

triac BT 139

Abstract: BT 139 Triac BTA06 BTB06 T0220AB
Contextual Info: SGS-THOMSON BTA06 T/D/S/A BTB06 T/D/S/A SENSITIVE GATE TRIACS FEATURES • VERY LOW Igt = 10mA max ■ LOW Ih = 15mA max ■ BTA Fam ily: INSULATING VOLTAGE = 2500V r MS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per­

BTB06-600

Abstract: BTB60
Contextual Info: BTA06 T/D/S/A BTB06 T/D/S/A SGS-mOMSON M M iü lg ïM K SENSITIVE GATE TRIACS FEATURES • VERY LOW Iqt = 10mA max ■ LOW Ih = 15mA max ■ BTA Family: INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per­

9931 morocco

Abstract: L6504 si24
Contextual Info: Æ T S C S 'T H O M S O N EiilOg^OllLKgTr^QHgi L6504 SOLENOID CONTROLLER PRELIM IN ARY DATA . SWITCH MODE CURRENT REGULATION •TTL COMPATIBLE LOGIC INPUTS . DRIVES ONE OR TWO EXTERNAL POWER TRANSISTORS ■VERY PRECISE ON-CHIP REFERENCE . ANALOG CURRENT CONTROL INPUT

Contextual Info: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.

TRANSISTOR SMD MARKING CODE XI

Contextual Info: • 0235bOS OD^bbOl 422 SIEMENS 5-V L ow -D rop Fixed V oltage R egulator T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection

BPNPA16P

Contextual Info: Data Sheet November 1997 microelectronics group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

2N329A

Abstract: 2N328A JAN MIL-S-18500 2N328A 2N329A JAN ic tba 507 a
Contextual Info: MIL-S- 19500/ 110C li m i irr? SUPERSEDING MIL-6- 19500/ HOB 8 November 1965 MUJTARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N328A AND 2N329A Thla specification Is mandatary for uac by all Departmenta and Agende» of the Department of Deiena«.