429H Search Results

429H

Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.43 inch 11.0mm Dig it height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit DUAL DIGIT DISPLAY CSD-428H/429H Model no. § CSD-428H/429H Bright Red (Gap/Gap)

mode 5 IFF

Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

HVV0912-800

Abstract: SEMICONDUCTORS INC
Contextual Info: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor

446H

Abstract: IR 1836 3v 30E2H 18AF 3310h 3310H transistor 3A0F bridge marking Z6 SDH 209 PM5363
Contextual Info: PM5363 TUPP+622 TUPP+622 DATASHEET PMC-1981421 ISSUE 4 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES PM5363 TUPP+622 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES DATASHEET RELEASED ISSUE 4: JULY 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

Contextual Info: w WM5102 Audio Hub CODEC with Voice Processor DSP DESCRIPTION FEATURES The WM5102[1] is a highly-integrated low-power audio system for smartphones, tablets and other portable audio devices. It combines wideband telephony voice processing with a flexible, high-performance audio hub CODEC.

5B1 International Rectifier

Abstract: 446H BE 4CA diode BFE 75A 451H 729h 751H BFE 73A INTERNATIONAL RECTIFIER 432h S4 6ba
Contextual Info: Octal T1/E1/J1 Long Haul / Short Haul Transceiver IDT82P2288 Version April 25, 2003 2975 Stender Way, Santa Clara, Califormia 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 2001 Integrated Device Technology, Inc.

GS2970

Abstract: GS2970-IBE3 GS2971 GS2984 gennum gs2971 Gennum GS2984 GS2972 Gennum GS2970 SMPTE ST 425 425M
Contextual Info: GS2970 3Gb/s, HD, SD SDI Receiver Complete with SMPTE Audio and Video Processing Key Features Applications • Operation at 2.970Gb/s, 2.970/1.001Gb/s, 1.485Gb/s, 1.485/1.001Gb/s and 270Mb/s • Supports SMPTE 425M Level A and Level B , SMPTE 424M, SMPTE 292, SMPTE 259M-C and DVB-ASI

UHF TRANSISTOR

Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Contextual Info: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

IGCT

Abstract: LQFP100-P-1414-0 QFP100-P-1420-0 TLCS-900 TMP91CW60DFG TMP91CW60FG V23018
Contextual Info: 16 Bit Microcontroller TLCS-900/L1 Series TMP91CW60FG TMP91CW60DFG Revision 1.0 TOSHIBA CORPORATION The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless,

Contextual Info: PM PM5362TUPP-PLUS PMC-Sierra, Inc. DATA SHEET PMC-951010 1 ISSUE 6 SONET/SDH TRIBUTARY UNIT PA YLOAD PROCESSOR / PERFORMANCE MONITOR FEATURES • Configurable, multi-channel, payload processor for aligning SONET virtual tributaries VTs or SDH tributary units (TUs) in an STS-3 or STM-1 byte

Contextual Info: P S ta n d a rd P r o d u c t PMC-951010 I [ y I # | £ PM C-Sierra, Inc. ISSUE 4 PM5362 TUPP-PLUS SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FEATURES • Configurable, multi-channel, payload processor for aligning SONET virtual tributaries VTs or SDH tributary units (TUs) in an STS-3 or STM-1 byte serial

GS2971A

Abstract: M019
Contextual Info: GS2971A 3Gb/s, HD, SD SDI Receiver, with Integrated Adaptive Cable Equalizer complete with SMPTE Audio and Video Processing Key Features Applications • Operation at 2.97Gb/s, 2.97/1.001Gb/s, 1.485Gb/s, 1.485/1.001Gb/s and 270Mb/s • Supports SMPTE 425M Level A and Level B , SMPTE

Contextual Info: GS1670 HD/SD SDI Receiver Complete with SMPTE Audio and Video Processing Key Features Applications • Operation at 1.485Gb/s, 1.485/1.001Gb/s and 270Mb/s • Supports SMPTE 292, SMPTE 259M-C and DVB-ASI • Integrated Reclocker with low phase noise, integrated

Contextual Info: 16 Bit Microcontroller TLCS-900/L1 Series TMP91CW60FG TMP91CW60DFG Revision 1.0 TOSHIBA CORPORATION The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless,

Radar

Abstract: diode gp 429 HV400 hvvi transistor 1150
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

7S32C

Abstract: SMC6200
Contextual Info: SMC626X Famil 4-BIT MICROCOMPUTERS • INTRODUCTION The SMC626X family of single chip microcomputers features a 4-bit SMC6200 core CPU, ROM 12 bits per word , RAM (4 bits per word), LCD Driver/Controller, input ports, output ports, I/O ports, timers, serial ports,

PEX8532-BC25BIG

Abstract: PEX8532 965H 06FFFFFFH 449H PEX8532-BC25BI PEX8532-BB25BI plx pex PEX8111
Contextual Info: ExpressLane PEX 8532AA/BA/BB/BC 8-Port/32-Lane Versatile PCI Express Switch Data Book Version 1.6 February 2007 Website www.plxtech.com Technical Support www.plxtech.com/support/ Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2007 by PLX Technology, Inc. All Rights Reserved – Version 1.6

PEX8516

Abstract: vhdl code for 4*4 crossbar switch 85XX PEX8516-BB25BI PEX8518 PEX8111 8516AA/BA/BB
Contextual Info: Version 1.4 2007 PEX 8516 Not recommended for new designs – please use PEX8518 for new designs PEX 8516AA/BA/BB ExpressLane Versatile PCI Express Switch Data Book Version 1.4 January 2007 Website www.plxtech.com Technical Support www.plxtech.com/support

Contextual Info: w WM5102S Audio Hub CODEC with Master Hi-Fi DSP DESCRIPTION [1] The WM5102S is a highly-integrated low-power audio system for smartphones, tablets and other portable audio devices. It supports audiophile quality DAC playback on a flexible, high-performance audio hub.

Contextual Info: PACKAGE H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING IEC 134

R3672

Contextual Info: w WM8998 High Performance Audio Hub CODEC DESCRIPTION [1] The WM8998 is a highly-integrated low-power audio hub CODEC for smartphones, tablets and other portable audio devices. It is optimised for use in multimedia devices where the audio processing requirements are implemented on the

HVV1012-550

Abstract: 4884 12W 01 TRANSISTOR hvvi
Contextual Info: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed

500W TRANSISTOR

Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor

HVV1214-140

Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Contextual Info: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain