4800 POWER MOSFET Search Results

1N3064

Abstract: 1N916 ACPL-4800 4800 8pin mosfet
Contextual Info: ACPL-4800 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler Data Sheet Description Features The ACPL-4800 fast speed optocoupler contains a GaAsP LED and photo detector with built-in Schmitt trigger to provide logic-compatible waveforms,

ACPL-4800

Abstract: 1N3064 1N916
Contextual Info: ACPL-4800 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler Datasheet Description Features The ACPL-4800 fast speed optocoupler contains a GaAsP LED and photo detector with built-in Schmitt trigger to provide logic-compatible waveforms, eliminating the need for additional

servo motors schematic

Abstract: ACPL-4800 ACPL-4800-000E "dc servo motor" dc servo igbt diagram mosfet 4800 dc ac inverter schematic igbt difference between IGBT and MOSFET IN inverter igbt ac motor speed control schematic diagram brushless motor control
Contextual Info: ACPL-4800 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-4800 fast speed optocoupler contains a GaAsP

Lite-On Power Semiconductor

Abstract: heller
Contextual Info: For Immediate Release Joseph Liu Chief Financial Officer Associates Diodes Incorporated 805 446-4800 Philip Bourdillon Silverman Heller (310) 208-2550 DIODES INCORPORATED ANNOUNCES NEW BRAND IDENTITY — Company Will Market the "Vishay/Lite-On Power Semiconductor" Brand —

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

ao4800

Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Contextual Info: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

mosfet 4800

Abstract: ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features MAX. VGS = -4.0 V, ID =-42 A Low Ciss: Ciss = 4800 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 23m +0.2 4.57-0.2 +0.2

7F MARKING

Abstract: APM4800 J-STD-020A ANPEC
Contextual Info: APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged S 1 8 D S 2 7 D S 3 6

Contextual Info: IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS

Contextual Info: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

Contextual Info: IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS

SJ 76 A DIODE EMI

Contextual Info: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

IXFD14N80

Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
Contextual Info: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9

Contextual Info: IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application VDSS Environmentaly Friendly Product

Contextual Info: IRF9383MPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V

Contextual Info: IRF9383MPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V

Contextual Info: IRF6712SPbF IRF6712STRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHS Compliant and Halogen Free  VDSS l Low Profile (<0.7 mm) VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V

IRF938

Abstract: 60v 10KHz ir MOSFET
Contextual Info: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)

Contextual Info: IRF8304MPbF DirectFET Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V l Ultra Low Package Inductance

irf9395

Contextual Info: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application

Contextual Info: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET ‚ Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)

Contextual Info: IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits

Contextual Info: StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET  Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified