4MX16 EDO Search Results

4MX16

Contextual Info: 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ Pin Identification Description The TS8MES64V6EZ is an 8M x 64-bit dynamic Symbol Function RAM high-density memory module. It consists of A0~A11 Address inputs 8pcs of 4Mx16 DRAMs assembled on the printed

Contextual Info: 32MB 144 PIN 60ns SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS4MES64V6EZ Pin Identification Description The TS4MES64V6EZ is a 4M x 64-bit dynamic Symbol Function RAM high-density memory module. It consists of A0~A11 Address inputs 4pcs of 4Mx16 DRAMs assembled on the printed

capacitor taa

Contextual Info: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic

TAA 141

Contextual Info: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic

Contextual Info: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic

Q-SERIES

Contextual Info: HYM5V64404A Q-Series SO DIMM 4Mx64 bit CMOS DRAM MODULE based on 4Mx16 DRAM, EDO, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V64404A Q-Series is a 4Mx64-bit EDO mode CMOS DRAM module consisting of four 4Mx16 TSOP and one 2048-bit EEPROM on a 144 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

KM416V4104BS

Contextual Info: DRAM MODULE KMM374F404BS KMM374F404BS EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F404BS is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F404BS

KM416C4104AS

Abstract: kmm5328004asw km416c4104a
Contextual Info: Preliminary KMM5328004ASW/ASWG DRAM MODULE KMM5328004ASW/ASWG EDO Mode 8M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004A is a 8Mx32bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5328004A

KMM374F804BS

Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS

Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS

Contextual Info: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.

KMM466F404CS2-L

Contextual Info: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification

M466F0804DT1-L

Contextual Info: DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0804DT1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification

tsop 138

Contextual Info: DRAM MODULE M374F0805DT1-C M374F0805DT1-C Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0805DT1-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification

Contextual Info: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification

Contextual Info: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification

KMM5324004BSW

Abstract: KMM5324004BSWG km416c4104bs
Contextual Info: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages

Contextual Info: DRAM MODULE M466F0404CT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0(Jan. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0404CT2-L DRAM MODULE M466F0404CT2-L M466F0404CT2-L EDO Mode

Contextual Info: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A

KMM5328004BSW

Abstract: KMM5328004BSWG
Contextual Info: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages

KMM5324004BSW

Abstract: KMM5324004BSWG
Contextual Info: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages

Contextual Info: M372F0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372F0805DT0-C M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode