600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

3471A

Abstract: 601R6BN APT551R
Contextual Info: A dvanced P o w er TECHNOLOGY O D Ô S POWER MOS IV APT601R3BN APT551R3BN APT601R6BN APT551R6BN 600V 550V 600V 550V 7.5A 1.3012 7.5A 1.30Q 6.5A 1.60Q 6.5A 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

6045h

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT601R3KN

Abstract: R6KN APT601R6KN
Contextual Info: ADVANCED P OWE R TECHNOLOGY blE D 0557^ 0^ 000071b =10i4 IAVP A dvanced P o w er Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o l o g y * Q D APT6015JN APT6018JN O S ISOTOP* 600V 600V 38.0A 0.15Í2 35.0A 0.18Q "UL Recognized" File No. E145592 S POWER MOS IVe P ÏÏ= IE ï# T T 51 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DE S 7‘l D t1 0GGG773 b 7 T « A V P ADVANCED P ow er T e c h n o lo g y 9 POWER MOS IV APT601R3CN 600V APT551R3CN 550V APT601R6CN 600V APT551R6CN 550V 6.5A 6.5A 5.5A 5.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT6060BNR

Abstract: APT6070BNR APT6070BN
Contextual Info: A dvanced P o w er Te c h n o lo g y O D O APT6060BNR APT6070BNR S POWER MOS IV' 600V 13.0A 0.600 600V 12.0A 0.70Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT-6018

Abstract: APT6018JN
Contextual Info: A dvanced P ow er Te c h n o l o g y O D O APT6015JN APT6018JN S ISOTOP* 600V 600V 38.0A 0.15Q 35.0A 0.180 S U "UL Recognized" File No. E145592 S POWER MOS IV< SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

AP4002P

Contextual Info: AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristics Simple Drive Requirement G 600V RDS ON 5 ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with

NF925

Abstract: ISOPLUS247
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR32P60P VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600

ISOPLUS247

Abstract: 16P60P
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings

IXTK32P60P

Abstract: IXTX32P60P PLUS247 NF925
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTK32P60P IXTX32P60P VDSS ID25 = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V

6030BN

Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN
Contextual Info: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT

ff1131

Contextual Info: • r W . jA ADVANCED P ow er Te c h n o lo g y * APT601R3KN 600V 6.5A 1.300 APT601R6KN 600V 5.8A 1.60 £2 O D O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Sym bol V All Ratings: Tc = 25°C unless otherwise specified.

APT6040BNR

Contextual Info: O A d van ced P o w er Te c h n o l o g y O O s APT6040BNR 600V 18.0A 0.400 APT6045BNR 600V 17.0A 0.45S2 POWER MOS IV' UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

DLS FT 031

Abstract: TL 084L APT6030BNR 25CC APT6033BNR
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

APT6030BNR

Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter

Contextual Info: ADVANCED POtdER TECHNOLOGY b lE D • 000071b =104 ■ AVP ■R A d v a n c ed W /Æ P o w e r Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Ü POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

APT6040BNR

Contextual Info: O D O S A dvanced P ow er Te c h n o l o g y APT6040BNR APT6045BNR G B 'íitK MOS r ü 600V 18.0A 0.40Q 600V 17.0A 0.45U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS >D Parameter APT6040BNR APT6045BNR UNIT

lm 5560

Contextual Info: A dvanced P ow er T e c h n o lo g y 9 Q D Ô S POWER MOS IVe APT6060BN APT5560BN APT6070BN APT5570BN 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Í2 0.60Q 0.70Q 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for

605A

Contextual Info: APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Contextual Info: APT60M75PVR W 600V 60.5A 0.075W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also