tip41cf
Contextual Info: TIP42F; 42A F TIP42BF; 42CF PHILIPS INTERNATIONAL SbE D • 7110fl2fcj 0 0 4 3 5 4 2 15Û H P H I N SILICON EPITAXIAL PO W ER TRA N SIST O R S PNP silicon epitaxial power transistors, each in a SO T186 envelope with an electrically insulated mounting base.
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TIP42F;
TIP42BF;
7110fl2fcj
TIP41F,
TIP41AF,
TIP41BF
TIP41CF.
TIP42F
OT186.
tip41cf
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74ABT374
Abstract: 74ABT374D 74ABT374DB 74ABT374N 74ABT374PW 038J 74abt374 Philips
Contextual Info: ADVANCED BiCMOS PRODUCTS 74ABT374 Octal D-type flip-flop; positive-edge trigger 3-State Product specification Supercedes data of September 1 5 ,1 9 9 3 IC23 n th October 1 9 ,1 9 9 4 Philips Semiconductors PHILIPS 7110fl2b 007Tfllb TS7 PHILIPS Philips Semiconductors Advanced BiCMOS Products
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74ABT374
711002b
64mA/-32mA
500mA
USA322-1
74ADT17/1
OT36Q-1
U-l-0-10
USA403
74ABT374
74ABT374D
74ABT374DB
74ABT374N
74ABT374PW
038J
74abt374 Philips
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5609 t transistor
Abstract: 5609 transistor transistor 5609 BFG195 5609 npn transistor 5609 npn 702 P TRANSISTOR 702 Z TRANSISTOR UBB267 Tomb-25
Contextual Info: Philips Semiconductors Product specification NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE T> m 7110fl2b BFG195 0D4SE2fl TIT • PINNING NPN transistor in a 4-lead dual-emitter plastic SOT1Q3 envelope. PIN It is designed for wideband
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BFG195
7110fl2b
OT103.
5609 t transistor
5609 transistor
transistor 5609
BFG195
5609 npn transistor
5609 npn
702 P TRANSISTOR
702 Z TRANSISTOR
UBB267
Tomb-25
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BD947F
Abstract: BD948F BD943F BD944F BD946F 948F
Contextual Info: BD944F; 946F BD948F PHILIPS INTERNAT IO NAL SbE D • 7110fl2b 0043CHB 17T « P H I N T - 7 ? *f SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.
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BD944F
BD948F
7110fl2b
0043CHB
OT186
BD943F,
BD945Fand
BD947F.
BD946F
BD947F
BD948F
BD943F
948F
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epsilam
Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
Contextual Info: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military
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PZ1418B15U
PZ1721B12U
PZ2024B10U
711002b
PZ1418B30U/PZ1721B25U/PZ2024B20U
T-33-09
epsilam
PZ2024B10U
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2N930 NPN transistor FREE
Abstract: 2n930
Contextual Info: 2N930 1 * 2 * - PHILIPS INTERNATIONAL 5LE D n _j L 7110flSb DDM25ti2 GST M P H I N N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise amplifier appli
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2N930
7110flSb
10itA
711DflSb
T-29-17
2N930 NPN transistor FREE
2n930
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BDT93
Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
Contextual Info: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.
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BDT91
BDT93
BDT95
BDT92,
BDT94
BDT96.
BDT91
BDT93
711002b
BDT95
BDT92
BDT96
3313
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BUK436-200A
Abstract: BUK436-200B MN1 transistor
Contextual Info: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK436-200A/B
BUK436
-200A
-200B
BUK436-200A
BUK436-200B
MN1 transistor
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74ABT
Abstract: 74ABT373 74ABT573 74ABT573D 74ABT573N 74ABT573 Philips
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl5b 0D5752S T27 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products Product specification Octal D-type transparent latch 3-State 74ABT573 QUICK REFERENCE DATA FEATURES • 74ABT573 is broadside pinout version of
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7110fl5b
DD5752B
74ABT573
74ABT573
74ABT373
500mA
74ABT
500ns
74ABT373
74ABT573D
74ABT573N
74ABT573 Philips
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RX1214B150W
Contextual Info: T ^ 3 3 - lè RX1214B150W PHILIPS INTERNATIONAL SbE D Bi 7110fl2b DDHbSlE 1T2 « P H I N — M IC R O W A V E P O W E R T R A N S IS T O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power am plifier, operating in the 1.2 to 1.4 G H z frequency range.
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RX1214B150W
7110fl2b
711002b
7Z242Ã
RX1214B150W
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YBs transistor
Abstract: BUK437-400B
Contextual Info: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK437-400B
VA62b
00b3T20
YBs transistor
BUK437-400B
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PCF80C552-5-16WP
Abstract: PCB80C552-5-16WP PCB80C552-5-24WP PCB80C552 80c552 instruction set S87C552-5A68 5a68 80C552 80C51 83C552
Contextual Info: Philips Semiconductora Microcontroller Products 7110flgb 00bb517 S70 « P H I N Pf0duct3pecification Single-chip 8-bit microcontroller 87C552 Single-chip 8-bit microcontroller with 10-bit A/D, capture/compare timer, high- speed outputs, PWM PIN CONFIGURATIONS
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7110flgb
00bb517
87C552
10-bit
87C552
80C51
80C51.
83C552â
80C552â
PCF80C552-5-16WP
PCB80C552-5-16WP
PCB80C552-5-24WP
PCB80C552
80c552 instruction set
S87C552-5A68
5a68
80C552
83C552
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TIP33
Abstract: TIP-33 TIP33A-TIP33B-TIP33C TIP33C T1P34 TIP33A TIP33B TIP34A TIP34B TIP34C
Contextual Info: TIP33; A; B; C A V PHILIPS INTERNATIONAL SLE ]> 3 3 ^ /3 •! 7110flEL GDM3SDb 117 ■ PHIN SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complements are
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TIP33;
T-33-/3
7110flEL
OT-93
T1P34,
TIP34A,
TIP34B
TIP34C.
T-33-13
TIP33
TIP-33
TIP33A-TIP33B-TIP33C
TIP33C
T1P34
TIP33A
TIP33B
TIP34A
TIP34C
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b0724
Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
Contextual Info: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and
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BD720
BD722
BD724
BD726
711002b
BD440.
BD719;
BD724.
b0724
B0719
transistor bu 311
B0720
BD440
BD719
BD726
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BUK637-500B
Contextual Info: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode
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711002b
D0b43Db
BUK637-500B
BUK637-500B
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BD840
Abstract: FL110 B0844 BD844 BD839 B0840 BD841 BD842 BD843 IEC134
Contextual Info: _ PHILIPS BD840 BD842 BD844 II INTERNATIONAL SL.E D • 7110fl2b 0043D3Li 34T ■ P HI N T - 3 3 - ! SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0 - 2 0 2 envelope, recom m ended fo r use in television circuits and
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BD840
BD842
BD844
D043D7b
T0-202
BD839,
BD841
BD843.
BD840
FL110
B0844
BD844
BD839
B0840
BD842
BD843
IEC134
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BU903
Abstract: t350
Contextual Info: I I PHILIPS INTERNATIONAL 45E J> E3 7110fl2b ODBD^aS 4 E3PHIN BU903 T ' SIL IC O N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-speed, glass-passivated npn pow er transistors in a S O T 9 3 envelope intended fo r use in p ow e r supplies and deflection circuits for co lo u r receivers and m onitors.
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711002b
BU903
T-33-Ã
7Z21409
BU903
t350
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PDF
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LTN242
Abstract: LXL242-G
Contextual Info: PHILIPS INTERNATIONAL • bGE 7110fl2t> 00S71bfl 3TÔ ■ LXL242-G Data sheet status Product specification date of issue July 1990 ' Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION Lit area dimensions The LXL242-G is an electro-luminescent backlight panel
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7110fl2t>
0QS71bfl
LXL242-G
LTN242
7110flab
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31d8 diode
Abstract: NEOSID inductive proximity detector ic 250 3B7 31d8 philips 3h1 pot core Proximity Detectors for metal detector PROXIMITY inductive ic OM386B OM387B
Contextual Info: - PHILIPS INTERNATIONAL sur i> bbt h • 3 OM386B OM387B r,« 7110fl2b 00470flfa 534 H P H I N HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated circu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r co n stru ctio n ,
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OM386B
OM387B
711002b
00470flb
OM386B
OM387B
7Z69084
31d8 diode
NEOSID
inductive proximity detector ic
250 3B7
31d8
philips 3h1 pot core
Proximity Detectors for metal detector
PROXIMITY inductive ic
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PDF
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12 pin 4digit 7 segment display
Abstract: glass lcd multimeter LCD 7 segment display with 13 pins 4-DIGIT 7-SEGMENT LTD242R-12 Philips 3.5 digit 7 segment lcd display LTD242R-22 4 digit 7 segment lcd display 40 pin LTD242F-22 40 PIN 4 digit lcd display
Contextual Info: PHILIPS INTERNATIONAL bOE J> m 7110flSb D0570Ô4 bbT Philips Components_ D ata sheet status P ro du ct specification d a te of issue July 1990 LTD242 IPHIN T - its t Liquid crystal display DEVICE DESCRIPTION The LTD242 is a 4-digit, 7-segment multi-function LCD.
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7110flEb
0D570Ã
LTD242
LTD242R-12
LTD242R-22
LTD242F-22
LTD242F-22
12 pin 4digit 7 segment display
glass lcd multimeter
LCD 7 segment display with 13 pins
4-DIGIT 7-SEGMENT
Philips 3.5 digit 7 segment lcd display
4 digit 7 segment lcd display 40 pin
40 PIN 4 digit lcd display
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BUK457-600B
Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D fll 7110fl2b CJObmMb ^ 3 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711002b
0b414b
BUK457-600B
T0220AB
711002b
BUK457-600B
T0220AB
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PDF
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74ABT16
Abstract: 74ABT16244A BT16244ADGG BT16244ADL
Contextual Info: ADVANCED BiCMOS PRODUCTS 74ABT16244A 16-bit buffer/line driver 3-State Product specification I October 28, 1994 Philips Semiconductors 1 PHILIPS PHILIPS - 7110fl2b DD&E?h7 OTS • 1 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Advanced BiCMOS Products
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74ABT16244A
16-bit
7110fl2b
A/-32mA
500mA
711002b
74ABT16
74ABT16244A
BT16244ADGG
BT16244ADL
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PDF
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POCSAG Receiver
Abstract: POCSAG TQFP32 footprint transistor n551 CXO 049 DO25 PCD5003 PCD5003H S524 TQFP32
Contextual Info: INTEGRATED CIRCUITS SInlEET PCD5003 Advanced POCSAG Paging Decoder Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03 Philips Sem ico n d u cto rs 7110fl2b OOA^m 1995 Jun 08 PHILIPS 33T This Material Copyrighted By Its Respective Manufacturer
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PCD5003
7110fl2b
16-times
7110fi2b
POCSAG Receiver
POCSAG
TQFP32 footprint
transistor n551
CXO 049
DO25
PCD5003
PCD5003H
S524
TQFP32
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PDF
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74ABT273A
Abstract: 74ABT273AD 74ABT273ADB 74ABT273AN 74ABT273APW 74ABT373 74ABT374 74ABT377
Contextual Info: INTEGRATED CIRCUITS Product specification 1995 Feb 06 IC23 Data Handbook Philips Sem iconductors PHILIPS I 7110flZb OOflbTMb ATI • ' This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification Octal D-type flip-flop
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74ABT273A
74ABT377
74ABT373
74ABT374
74ABT273A
OT339-1
711062b
TSSQP20:
74ABT273AD
74ABT273ADB
74ABT273AN
74ABT273APW
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