76A MARKING Search Results

Contextual Info: R6076ENZ1 Nch 600V 76A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: 65A/63A/76A SERIES 14 PIN LEADING & TRAILING TTL ACTIVE DELAY LINE FEATURES • • • • 14-PIN PACKAGE. 10 EQUALLY-SPACED TAPS. TTL SCHOTTKY INTERFACED. TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current IIL Logic”0” Input Current

76A50

Abstract: TRAILING TTL ACTIVE DELAY LINE
Contextual Info: Yuan Dean Scientific CO.,LTD 14 PIN LEADING & TRAILING TTL ACTIVE DELAY LINE 65A/63A/76A SERIES FEATURES • • • • 14-PIN PACKAGE. 10 EQUALLY-SPACED TAPS. TTL SCHOTTKY INTERFACED. TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current

TRAILING TTL ACTIVE DELAY LINE

Abstract: 76A50
Contextual Info: Yuan Dean Scientific CO.,LTD 14 PIN LEADING & TRAILING TTL ACTIVE DELAY LINE 65A/63A/76A SERIES FEATURES • 14-PIN PACKAGE. • 10 EQUALLY-SPACED TAPS. • TTL SCHOTTKY INTERFACED. • TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

FCA76N60N

Abstract: FCA76N60 613 MOSFET
Contextual Info: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)

FCH76N60N

Abstract: FCH76N60 N-Channel mosfet 600v ir
Contextual Info: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

5N 3011

Abstract: sj 76a 1N3064 speed checker
Contextual Info: MIL-M-38510/76B 4 December 1985 W F K S F C m f G -MIL-M-38510/76A 7 N o v e m b e r 1983 Qualification requirements have been removed for device type 02. See scope. MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR SCHOTTKY T T L , CASCADABLE, SHIFT REGISTERS, MONOLITHIC SILICON

DIODE 76A

Abstract: 035H IRFPE30
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

IRF3703

Abstract: 24V 10A SMPS
Contextual Info: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB

24V 10A SMPS

Abstract: DIODE 76A IRFP3703PbF 035H IRFPE30 SMPS 24V irfp3703
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

DIODE 76A

Contextual Info: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

smps 24v 10a

Abstract: DIODE 76A 24V 10A SMPS 035H IRFPE30 MJ6000
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

auirfr8403

Contextual Info: AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB

irf3703

Contextual Info: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB

y 683

Abstract: LC-XC1238P A114A LC-XC1238 TAG 480 600
Contextual Info: Individual Data Sheets For main power supplies. Cycle long life type. LC-XC1238P Dimensions mm Terminal type (option) 16 M6 9.8 16.5 M5 Battery case resin: standard (UL94HB) Contents indicated (including the recycle marking, etc.) are subject to change without notice.

k4074

Abstract: A1203 2SK4074LS 2sk4074 DIODE 76A
Contextual Info: 2SK4074LS Ordering number : ENA1203 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4074LS General-Purpose Switching Device Applications Features • • • Ultralow ON-resistance. Motor drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

MARKING CODE 76a

Contextual Info: IRF3703PbF TO-220AB Package Outline 10.54 .415 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 4- COLLECTOR

TFK diode 361

Abstract: MARKING ael ERC84-009
Contextual Info: E R C 8 4 - 0 0 9 3 A S ' 3 'y h + — '<i) 7r# ' U i ± 'i 'w m - K '— K • : Outline Drawings SCHOTTKY BARRIER DIODE ■ f t « : Features ■ ^ T js : Marking Low V F 3 - K : ff Color code : Blue Super high speed sw itching. Abridged type n o m e ^