KM23C8001 Search Results

Contextual Info: PRELIMINARY KM23C8001H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001H is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology.

KM23C8001B

Abstract: KM23C8001
Contextual Info: KM23C8001B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1,048,576 x 8 bit organization

Contextual Info: KM23C8001A CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1,048,576 k 8 bit organization

Contextual Info: PRELIMINARY KM23C8001H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES • • • • 1,048,576 » 8 bit organization Fast access time; 100ns (max.) Supply voltage: single + 5V C urrent consumption O perating: 50mA (max.) • • • • Fully static operation

KM23C8001A

Contextual Info: KM23C8001A G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1 ,0 4 8 ,5 7 6 x 8 bit organization

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Tb4m2 KM23C8001A G 0017G43 71fl HSflfiK CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using

KM23C8001B

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E D • 7%H1HS KM23C8001 B G 0 0 17 Q4 7 3b3 « S f l S K CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using

KM23C8001

Abstract: KM23C8001A
Contextual Info: KM23C8001A CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C0OO1A is a fu lly s ta tic m ask program m able ROM organized 1 ,0 4 8 ,5 7 6 X 0 bit It is fabricated using silicon-gate C M O S process technology.

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

23C8001A

Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

KM23C8001

Abstract: 32-sop
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E