KM23C1010J Search Results

Contextual Info: KM23C1010J CMOS MASK ROM 128KX8 CMOS MASK ROM FEATURES . KM23C1010J: 32-pin PLCC (Polarity programmable chip enable pin and output enable pin) • 131,072x8 bit organization • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

mask rom

Contextual Info: KM23C1010J CMOS MASK ROM 1M-Bit 128Kx8 CMOS MASK ROM FEATURES • KM23C1010J: 32-pin PLCC (Polarity programmable chip enable pin and output enable pin) • 131,072x8 bit organization • Fast access lime: 120ns (max.) • Supply voltage: single + 5V • Current consumption

mask rom

Contextual Info: KM23C1000/1010 G/J CMOS MASK ROM (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072x 8 bit organization • Fast access tim e: 120ns(max). • Supply voltaga: singie+5V •Current consumption Operating: 30 mA(max.) Standby: 50/<A(max.) • Fully static operation

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

23c1000

Abstract: KM23C1010 KM23C1000-20 mask rom KM23C1010G
Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 ODlbTH? b04 b7E D CMOS MASK ROM KM23C 1000/1010 G/J 1M-Bit (128K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072 X 8 bit organization • Fast access tim e: 120ns(max). • Supply voltage: single+5V • Current consumption

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

KM23C8001

Abstract: 32-sop
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E