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    M28F210 Search Results

    M28F210 Datasheets (137)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28F210 STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100M1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F210-100M1TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100M3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F210-100M3TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100M6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F210-100M6TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100N1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F210-100N1TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100N3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F210-100N3TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100N6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F210-100N6TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100XM1TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100XM3TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100XM6TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100XN1TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100XN3TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100XN6TR STMicroelectronics 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F210-100YM1 SGS-Thomson EEPROM Parallel Async Original PDF
    ...

    M28F210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28F210

    Abstract: M28F220
    Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    Original     		PDF M28F210 M28F220 TSOP48 15/20mA M28F210 M28F220

    M28F210

    Abstract: M28F220
    Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    Original     		PDF M28F210 M28F220 TSOP48 15/20mA M28F210 M28F220

    TSOP40

    Abstract: M28F210 M28F220 mil-std-883* 2015
    Text: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F210/220, M28F211/221, TSOP48 TSOP40 M28F210/220 5/12V) 256Kx8 128Kx16 M28F211/221 TSOP40 M28F210 M28F220 mil-std-883* 2015

    M28F220

    Abstract: No abstract text available
    Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter


    Original     		PDF M28F210 M28F220 15/20mA TSOP48 100ns 120ns TSOP48 AI01798 M28F220

    TSOP48 Thermal

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F210/220, M28F211/221, TSOP48 TSOP40 M28F210/220 5/12V) 256Kx8 128Kx16 M28F211/221 TSOP48 Thermal

    ram 2015

    Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
    Text: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9804 ram 2015 M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002

    BV-1 501

    Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
    Text: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9704 BV-1 501 mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics

    MK48T08

    Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
    Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9802 MK48T08 mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64

    intel pa28f400

    Abstract: AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231
    Text: AN907 APPLICATION NOTE Compatibility between St Boot Block and Intel SmartVoltage Flash Memories by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash


    Original     		PDF AN907 intel pa28f400 AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ


    Original     		PDF AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257

    intel pa28f400

    Abstract: AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400
    Text: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash


    Original     		PDF AN907 intel pa28f400 AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400

    intel pa28f400

    Abstract: AN907 AN907 applications
    Text: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash


    Original     		PDF AN907 intel pa28f400 AN907 applications

    QRR0001

    Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
    Text: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR0001 QRR0001 ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000

    M96S66

    Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
    Text: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9903 M96S66 tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903

    25X25

    Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
    Text: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9904 25X25 Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320

    M25C

    Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
    Text: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR0002 M25C Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		PDF M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


    Original     		PDF M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		PDF M28F210 M28F220 TSOP56 20/25mATypical 7T2T237 M28F210,

    28F220

    Abstract: 3542J 3D IC
    Text: 5 7 . S C S -T H O M S O N M28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		PDF M28F210 M28F220 TSOP48 15/20m 28F220 3542J 3D IC

    mwsl

    Abstract: M28F210 M28F220 TSOP56
    Text: SGS-THOMSON M28F210 M28F220 iìain e[R ì(S ig n ig i5 ìrrsìiò )iM [i(6 g 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIM INARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZ E PLASTIC PACKAGES TSOP56 and S044 MEMORY ER A SE in BLO CKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		PDF M28F210 M28F220 44-tt TSOP56 TSOP56 20/25mATypical 7T2T237 M28F210, mwsl M28F220

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ¡y M28F1001 1024K 128 x 8 CMOS FLASH MEMORY A D V AN C E DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.


    OCR Scan     		PDF M28F1001 1024K 28F1001 SPEED/10

    28F220

    Abstract: aish
    Text: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		PDF 28F210 28F220 TSOP48 or48K 15/20m M28F210, M28F220 28F220 aish

    A1273

    Abstract: No abstract text available
    Text: S G S -T H O M S O N G f. M28F1001 ilLt 1024K 128 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 ms. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES.


    OCR Scan     		PDF M28F1001 1024K A0-A16 5DIP32 SPEED/10 A1273