M28F411 Search Results

brief

Abstract: M28F411
Contextual Info: M28F411 4 Mbit 512Kb x8, Boot Block Flash memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

Contextual Info: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks – One 96K Byte Main Block – Three 128K Byte Main Blocks

AN1004

Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

Contextual Info: n r z *¿7 i. M28F411 M28F421 S C S -T H O M S O N R 0 ö » ilL I g fM O ( g i CMOS 4 Megabit (x 8, 7 Blocks FLASH MEMORY ADVANCE DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

1N914

Abstract: M28F411
Contextual Info: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

f421

Abstract: v421 6080ns
Contextual Info: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)

M28F220

Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

Contextual Info: M28F411 M28F421 SGS-THOMSON ìl i 4 Megabit x 8, Block Erase FLASH MEMORY PRELIM INARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­ tection

HE87

Contextual Info: $ 7 . M28F411 M28F421 S G S -T H O M S O N M S © § L iE O T © IiD § ll 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

F421

Contextual Info: SGS-1H0MS0N M28F411, F421 M28V411, V421 IO CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ADVANCE DATA S M ALL SIZE TSO P40 PLASTIC P A C K A G E - Normal and Reverse Pinout i M EM O R Y E R A S E in B L O C K S - One 16K Boot Block (top or bottom location)

A15CZ

Abstract: P40N10 A12CZ
Contextual Info: Gl SGS-TTiOMSON m M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware

M28F411

Contextual Info: M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

Contextual Info: F 5 M28F411 . 4 Mbit 512Kb x8, Boot Block Flash Memory • 5 V ± 10% SUPPLY VOLTAGE ■ ■ ■ ■ 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware

M28F411

Contextual Info: M28F411 4 Mbit 512Kb x8, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

M28F411

Contextual Info: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

CDIP32

Abstract: M28F411 QR123 endurance test report CDIP32 package
Contextual Info: QUALIFICATION REPORT M28F411 T6-U20: 4 Mb x8 FLASH MEMORY in TSOP40, CATANIA M5 DIFFUSION LINE INTRODUCTION The M28F411 is a 4Mb Dual Supply (5/12V) Boot Block Flash memory organised as 512K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6 micron T6-U20 (-20% upgrade) process which

TSOP40

Abstract: M28F410 M28F411
Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

TSOP40

Abstract: M28F410 M28F411
Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8