PZTA14 Search Results

PZTA14

Contextual Info: PZTA14 Darlington NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage

Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZTA14 NPN Darlington transistor Product data sheet Supersedes data of 1997 Sep 04 1999 Apr 14 NXP Semiconductors Product data sheet NPN Darlington transistor PZTA14 PINNING FEATURES • High current max. 500 mA

equivalent mpsa14

Abstract: PR05 MMBTA14 MPSA14 PZTA14
Contextual Info: MPSA14 MMBTA14 PZTA14 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

PZTA64

Abstract: VPS05163 PZTA13 PZTA14 PZTA63
Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Type Marking Pin Configuration PZTA13 PZTA 13 1=B 2=C 3=E 4=C SOT223 PZTA14 PZTA 14

transistor bel 100

Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA14 NPN Darlington transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN Darlington transistor

bel 188 transistor

Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

diode r207

Abstract: PZTA14
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC PZTA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W Lead-free: PZTA14L

Contextual Info: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC PZTA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W „ ORDERING INFORMATION

AN077

Contextual Info: PZTA14 NPN Silicon Darlington Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking PZTA14 PZTA14 1=B Pin Configuration 2=C 3=E

EA7 SMD

Abstract: PZTA14 darlington transistor SMD NPN smd npn darlington PZTA13
Contextual Info: ?110ôEb □ □ b cn ? f l IPHIN EÖ7 PZTA13 PZTA14 SMALL-SIGNAL DARLINGTON TRANSISTORS NPN small-signal Darlington transistors in a microminiature SMD envelope SOT-223 . Designed primarily fo r preamplifier input applications requiring high input impedance.

Contextual Info: SEM ICONDUCTOR tm MPSA14 MMBTA14 PZTA14 NPN Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t ga in a t c o lle c to r cu rre n ts to 1.0 A. S o u rc e d fro m P ro c e s s 05.

equivalent mpsa14

Abstract: MMBTA14 MPSA14 PZTA14 MA1000
Contextual Info: MPSA14 MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

f PZTA14T1

Contextual Info: Order this data sheet by PZTA14T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN Small-Signal Darlington Transistor M o to ro la P referred D evice This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device

transistor BF245

Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

transistor c 3181

Abstract: c1251 MARK 1N transistor 3181
Contextual Info: MMBTA14 PZTA14 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 1N B E C MPSA14 / MMBTA14 / PZTA14 MPSA14 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

KST14

Abstract: KST63 BC516 equivalent KSP13 BCV27 KST13 MMBT6427 MMBTA13 MMBTA14 NZT7053
Contextual Info: Discrete Small Signal Darlington Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration PZTA14 30 30 10 1.2 20000 - 5 100 1.5 100 0.1 PZTA28 80 80 12 0.8 10000

D40 transistor

Abstract: transistor 5167 PZTA14 5Ci transistor
Contextual Info: MPSA14 I MMBTA14 / PZTA14 & D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r " PZTA14 MMBTA14 MPSA14 SOT-23 SOT-223 M ark: 1 N NPN Darlington Transistor T h is d e v ice is d e s ig n e d for a p p lica tio ns requiring extrem ely

4011 philips

Abstract: PNP DARLINGTON SOT-23 PXTA14 BF840 pinout of IC 4011 PMBTA64 df SOT-223 BST50 PMBTA14 BSP50
Contextual Info: N AM E R PHILIPS/DISCRETE ESE 3> • bbS3T31 OGlbEBT 5 ■ "P-2 7 - 0 I Surface M ount Devices DARLINGTON TRANSISTORS ft* 1 PINOUT SEE SECTION VI PMBTA13 PZTA13 PMBTA14 PXTA14 PZTA14 SOT-23 SOT-223 SOT-23 SOT-89 SOT-223 20 20 30 30 30 30 30 30 30 30 300 300

SOT223 nxp

Abstract: PZTA14 PZTA64 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTA14 NPN Darlington transistor Product data sheet Supersedes data of 1997 Sep 04 1999 Apr 14 NXP Semiconductors Product data sheet NPN Darlington transistor PZTA14 FEATURES PINNING • High current max. 500 mA

Contextual Info: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN Small-Signal Darlington Transistor Motorola Preferred Dtvlc« This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

Contextual Info: PZTA14 NPN Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain Type PZTA14 1 Marking PZTA14 Pin Configuration 1=B 2=C Package SOT223 3=E Maximum Ratings Parameter Symbol Collector-emitter voltage