S3T31 Search Results

BYP21

Abstract: BYP21-50
Contextual Info: N AMER PHIL I P S / D I S C R E T E SSE D • bfc,S3T31 00223fc.S 7 ■ BYH21 SERIES A T -Q 3 -J 7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

BUZ71 dc to ac

Abstract: transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331
Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • t.t,S3T31 0014405 5 BUZ71 ^ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

MB8114

Abstract: BF246 BF246A BF247A
Contextual Info: bt,S3T31 n053S0? 552 • APX BF246A to C BF247A to C IM AMER PHILIP S/ DISCR ET E b?E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended fo r VHF and UHF amplifiers, mixers and general purpose switching.

OP222

Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B

Contextual Info: N AMER P H X L X P S / D X S C R E T E 'IVAV.vlu^O*M % S7D D bt,S3T31 ' 1 QDD7Q7fl fc, C E R A M IC STRI INLINE RF TR A N SISTO R S r. . M ILITARY ' INSTRUMENTATION CO M M UNICATIO NS <-s s -;s -'-'s -:-:-;s -r-r-:-:x s ^ ;v X S S v S •»:■vx-xwivj:"*:

PBYR12045TV

Abstract: PBYR12035TV PBYR12040TV d794 M3356 PBYR12045T m3351 T0327 m3353 Philips rectifier F 793
Contextual Info: DEVELOPMENT DATA ° bt>S3T31 0 0 2 2 ^ 3 3 2SE D T h is d a ta sheet c o n ta in s advance in fo r m a tio n and PBYR12035TV PBYR12040TV PBYR12045TV s p e c ific a tio n s are su b je c t t o change w it h o u t n o tic e . N AMER PHILIPS/DISCRETE 7-03-2]

BSP15

Abstract: BSP19
Contextual Info: N AMER PHILIPS/DISCRETE ESE D • bfc>S3T31 QQlh24B S ■ 64 Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. TYPE ’ - ’ • ■ -• . - RATINGS PACKAGE VcBO VCEQ V ¥ NPN (cont.) BF622 BF722 BF822 BSP20 BST40 SOT-89 SOT-223 SOT-23 SOT-223 SOT-89

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

BFR84

Abstract: transistor bfr84
Contextual Info: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,

Marking G1s

Contextual Info: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF

Contextual Info: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

Contextual Info: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching

transistor bt 808

Abstract: transistor 1548 b
Contextual Info: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2

Contextual Info: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for

BD239

Abstract: tp 9054 B0239A b0239c BD239A BD239B BD239C BD240 BD240C IBD239B
Contextual Info: V N AMER PHILIPS/DISCRETE _ 2SE D 1I • . * ^53=131 001^303 5 ■ ^ ! BD239; BD239A J I B D 2 3 9 B ; BD239C T - 3 £ ~ £ > ? SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier

DD 127 D TRANSISTOR

Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
Contextual Info: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

TRANSISTOR A3

Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
Contextual Info: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

laser diode philips

Contextual Info: N AMER PHILIPS/DISCRETE fl7D D bb53T31 □□DT745 7 • r DEVELOPMENT DATA T h li data iheat contain! advance Information and •pacifications era subject to chanoa without notice, T-41-07 516CQF-B DOUBLE HETEROSTRUCTURE AIGaAs DIODE LASER WITH FIBRE PIGTAIL

Contextual Info: U _ _ — - — - N AUER PHILIPS/DISCRETE OL.E D FowerMOS transistor • bbSBTBl DDlMMSfi 7 ■ " BUZ73 -pT 3 7 _ j May 1987

Contextual Info: N AMER PHILIPS/DISCRETE SSE D ^53=131 0D2SH73 T • I BY 128 SERIES _ V T -Q 3 -/7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended for

Contextual Info: 11 1^53=131 001=5713 0 • 25E D N AMER PHILIPS/DISCRETE BDT41;A BDT41B;C J T -3 3 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The TIP41 series is an equivalent type. P-N-P complements are BDT42 series.

SOT-90B

Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
Contextual Info: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage

BYD34D

Abstract: BYD34J BYD34G BYD34K BYD34M
Contextual Info: N AMER PHILIPS/DISCRETE h'lE D • Philips Semiconductors_ bh53^31 □0SbS7c1 410 ■ APX Maintenance type ~ not for new designs Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • S3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features