T03PL Search Results

PRSS0004ZC-A

Contextual Info: Magazine T03PL code Magazine PVC material Polyvinyl chloride Package name Renesas code Previous code TO-3PL* PRSS0004ZC-A T3PL Maximum storage No. Maximum storage No. Maximum storage No. Transistor/Magazine Magazine/Inner box Transistor/Inner box 25 10 250

M124

Abstract: R605A OE R611 m210 g
Contextual Info: PACKAGE DIMENSIONS mm T03PL E m a x. ' M110 5.0 ¿ 3 .2 .20 <§ 1 l° ‘ f « 3 ? « 101 o 4. CD 1 2 3 | 1 ! in I 3.0 •Ii 2.0 <n E E 0. 6 „ 3. 0 G a te C o lle c to r E m itte r 5.5 3.5 T03PF M116 ;° J 'eri 2 °± 2 - 0 ., 0.6 ; £ 3.0 I i iS 1 ij

1MBH50-090

Abstract: electrical symbols LC resonant circuit schematic symbols lc50a
Contextual Info: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

ECG2322

Abstract: s34 zener diode diode t48 s34 diode philips ECG2328 philips ECG2329 ECG2328 ECG2331 ECG zener diode 2 Amp zener diode
Contextual Info: PHILIPS E C G INC SHE D Transistors c o n rd j ECG Type Description and Application • bbSB^fi 000715^ S34 « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b o BV c e o

FS12UM-5

Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Contextual Info: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

Step-Down Voltage Regulator smd 5pin ic

Abstract: 3296 Variable Resistor hm 9102 d pin diagram for 3296 Variable Resistor IC 7447 PIN CONNECTION DIAGRAM hm 9102 SMD 5pin co CI 7447 BSI-3.3S2ROFM SMD 3pin qf
Contextual Info: Output Voltage 1.8V-3.3V, 3V-5V Ultra High Efficiency 93% TO-3PL Size, Step-Down Non-lsolated Type DC-DC Converter Beiinix IB Watt BSI-mini Series BSI-mini Series is an ultra small, TO -3PL packaged type, and non-isolated type step-down DC-DC converter which has achieved ultra high efficiency by the latest synchronous rectification circuit technology. BSI-m ini Series

T70 N03 412

Abstract: FS70SM FS10UM-2
Contextual Info: S h o r t F o rm D 3 t3 Powerex, Inc., 200 H lllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C

FX50SM-2

Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)

2sk1005

Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn

2SK2079-01M

Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

Contextual Info: HITACHI/ OPTOELECTRONICS SIE » MMTbSÜS ODllOMM 473 IHIT4 T 3 GN6075E Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3PL High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage v CE(sat) = 4V m ax

2SK962

Abstract: T03P 2MI200F-025
Contextual Info: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)

2SK2079

Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)

T0247AC

Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

marking code H8

Abstract: FS30UMJ-06 MP-3 Package MOSFET A20 N03
Contextual Info: m u a s * Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O f t F O F /T i D â t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Max imum Ratings, Tc = 25°C Electrical Characteristics

FS30ASH03

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics

7D30A-050EHR

Abstract: 7D50A-050EHR 7D75A-050EHR 7D150A-050EHR EXB841 6D20A-050EJR fuji darlington module 7d30a-050 fuji ipm 7d30a
Contextual Info: COLLIER SEMICONDUCTOR INC MflE 22307*15 00 015 7b 3ÖÜ J> ICOL Power Darlington Modules <S • EXB850 • EXBS40 900 VOLT IGBTs FOR RESONANT APPLICATIONS Device Type IMB50-090A MBT001 VCE8 Votts (min) 900 900 le Amps (min) 50 60 Rth (J-c) °C/Watts (max)

1MBH50-090

Contextual Info: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply

2SK1134

Abstract: 2SK2000A 2SK900 2SK905 2SK905A 2SK906 2SK906A 2SK947M
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 Volts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

2mb175

Abstract: 1MBH60-090 2MB175L-060 HIGH VOLTAGE DIODE for microwave ovens 1mbh 1MBH65-090 ERD60-100 T0220AB T03PL imbi300
Contextual Info: \W]IGBT mold types • • • • High speed sw itching • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w er drive Su ited fo r high fre q u e n c y p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.