A 1046 Search Results

Contextual Info: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024

Contextual Info: W hpl H E W L E T T m ifíM P A C K A R D Low On-Resistance Solid State Relays Application Note 1046 Introduction The on-resistance is an important specification for a solid state relay that uses MOSFETs at its output. In general, a lower on-resistance rating will allow a higher contact

ST102

Contextual Info: S I L I CO N T R A N S I S T O R CORP A 2 5 4 G 2 2 OOODTfiG 475 * S T C SbE D SILICON “P S * A S TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.3 Ohms TECHNICAL DATA SHEET

HSSR-8060

Abstract: ssr schematic circuit HSSR8060 ac ssr TRANSZORB solid HSSR-8200 HSSR8400 HSSR-8400 zener Diode But 5091-3123E
Contextual Info: Low On-Resistance Solid State Relays Application Note 1046 Introduction Summary of Characteristics The on-resistance is an important specification for a solid state relay that uses MOSFETs at its output. In general, a lower on-resistance rating will allow a higher contact

ssr schematic circuit

Abstract: HSSR-8400 HSSR8060 HSSR-8060 zener Diode But ac ssr TRANSZORB solid HSSR-8200 HSSR8400
Contextual Info: H Low On-Resistance Solid State Relays Application Note 1046 Introduction The on-resistance is an important specification for a solid state relay that uses MOSFETs at its output. In general, a lower on-resistance rating will allow a higher contact current rating. The HSSR-8060

5stp18h4200

Abstract: 18H3600
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. A 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

C2352

Contextual Info: g REV, A PART NUMBER REV. SSB-C0B5445SRW -A A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #1 OBRDR. & #10469, ¿c REDRAWN. DATE 1 1 -1 3 -9 8 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 'C MIN TYP 660 (RED) MAX CO CO PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE

2SA1146

Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
Contextual Info: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338

I403

Abstract: 39440
Contextual Info: 13 12 PLUG PART NO. ENG. NO. II iO 3191 RECEPTACLE P A R T NO. ENG. NO. 19-09-2048 19-09-2049 19-09-2047 3 I9 I-4 P 19-09- 1049 319 M P I 3 19 I-4P-A 19-09- 1046 19-09-2046 3 I9 I- 4 PI- A 3 19 M R 1 3 19 I-4R 1-A LEGEND 3 191 C IR C U IT S IZ E — P = PLUG

Contextual Info: A m 1 0 4 6 9 / A m 1 0 0 4 6 9 5 1 2 x 9 ECL Tag Buffer Am 10469/Am 100469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast address to comparator output MISS Replaces six or more integrated circuits with a single device On-chip parity generator and checker

Contextual Info: MIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATJO R EVISIO NS REDRAWN B REV ADD -5 PER 9 2-5256-005 AMD AD 6245 REVISED PER 0010-1046-95 REVISED PER 0010-0330-96 * A H O U S IN G r GLASS C O N TA C Tr PHO S PHO R N IC K E L A A PLATEr PLATEj PO LYESTER;

Contextual Info: REVISIONS M A D E FR O M CM 2"HSO C Z 3 MAY a s GA note5: 'com’t Z.FlWfSHES: ALL METAL FARTS- HARP GOLD PLATE PER. MlL-di-<i|<32043.EUECTR1CAL CHARACTERISTICS.' “* V* O VORK1U6 VOLTAGE- 5 0 0 VOLTS RMS. N O M IN A L IMPEPAWCE- S o i l . FRETQUENC/ RANGE- DC 1046Hz-

DPDT SWITCHES

Abstract: hp5082-2811
Contextual Info: G E SOLI» STATE 01 DE • 3û750fll DDlOHtiS 7 AD7541 3875081 G E SOLID STATE 01E 10462 AD7541 12-B it Multiplying D/A Converter " T 'S I 'O G E N E R A L DESCRIPTION FEATURES The Intersil AD7541 is a monolithic, low cost, high per­ formance, 12-bit accurate, multiplying digital-to-analog con­

Contextual Info: 1max 38 max Bestiickungsplon - contact layout 1918 17 16 15 1413 12 111 09 8 7 6 5 4 3 2 1 R3 A A A A A R2 A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A

three phase full wave uncontrolled rectifier

Contextual Info: S10A320 S10A340 S10A360 S10A380 S10A3100 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1046, REV. A THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 200/400/600/800/1000 VOLT, 11 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.

C17300

Abstract: QQ-P-35
Contextual Info: AMP PART n 1046232-1 SHEET 1 OF 1 REV A

sc 1046

Abstract: V1F diode ECG1046 G003 PHILIPS tuner schematic 220KB 1R5 silicon diode
Contextual Info: 17E PHILIPS E C G INC □ ^53=120 Ü003Ö24 1 T -7 7 -0 7 -0 5 ECG 1046 TV A FC CIRCUIT semiconductors Outline Unit I mm S ilico n m o n o lith ic 1C designed fo r V H F / U H F T V A F C {A utom atic Frequency Controljapplications. The device contains tw o V I F d if­

ADC10461

Abstract: ADC10462 ADC10464 ADC1061 ADC20461CIWM ADC20462CIWM ADC20464CIWM
Contextual Info: Semiconductor ADC10461 /ADC10462/ADC10464 10-Bit 600 ns A/D Converter with Input Multiplexer and Sample/Hold General Description Features Using an innovative, patented m ultistep* conversion te ch ­ nique, the 10-bit AD C10461, A D C 10462, and AD C10464

regulator 48V

Abstract: LTC3780EG 12v 6A flyback LTC3780 voltage regulator 48V 48V dc supply LTC3803 LTC4440 40ES6
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1046A HIGH EFFICIENCY 48V BUCK BOOST DC/DC SUPPLY LTC3780EG/LTC4440ES6 DESCRIPTION Demonstration circuit 1046A is a non-isolated, high efficiency buck-boost DC/DC supply featuring LTC 3780EG and LTC®4440ES6. The LTC3780 is a

RTC Backup

Abstract: AN-1046
Contextual Info: Preliminary AN-1046 Application Note EnerChip CC as Backup Power for a Microchip MCP79410 RTC Introduction Cymbet EnerChips are solid state rechargeable batteries having distinguishing characteristics compared to conventional rechargeable batteries. EnerChips have a high charge/discharge cycle life; low self-discharge;

Contextual Info: TXPI 1046 1310 nm Light Emitting Diode DESCRIPTION This is a high radiance InGaAs IR LED optimized for fiber optic applications requiring high power and a fast response time. ABSOLUTE MAXIMUM RATINGS ” ” ” ” ” Storage temperature. -55oC to +125oC

SE304

Contextual Info: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S

Contextual Info: Application Note 1046 Design Consideration with AP3202 Prepared by You Qingling System Engineering Dept. 1. Introduction 2. General Description The AP3202 is a current mode step-down DC-DC converter, capable of driving a 2A load with high efficiency, excellent line and load regulation. The

AP3202

Abstract: IN4148
Contextual Info: Application Note 1046 Design Consideration with AP3202 Prepared by You Qingling System Engineering Dept. 1. Introduction 2. General Description The AP3202 is a current mode step-down DC-DC converter, capable of driving a 2A load with high efficiency, excellent line and load regulation. The