A133 Search Results

04NG

Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
Contextual Info: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: bOE » S P S e a g a te • A1331fl7 0001143 403 ISMLB r-S~8- H3> Microelectronics Limited 1.5 AMP, 3-TERMINAL NEGATIVE REGULATORS IP120A, ÏP12Q, LM120, IP7900A Series, IP7900 Series SEMELAB PLC DESCRIPTION FEATURES The IP120A /IP7900A/IP7900 series of threeterm inal regulators is available with several

Contextual Info: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V

k 117

Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
Contextual Info: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1

BUW52

Abstract: LE17
Contextual Info: 37E D S E M E L A B LTD A1331A7 DOODlIt SEMELAB BUW 52 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for high current, high speed, low voltage applications M EC H A N IC A L DATA Dimensions in mm FEATURES . l o w v ce sat • FAST SWITCHING • HIGH CURRENT

BUW91

Abstract: 0DG02 LE17
Contextual Info: SENELAB LTD 3 7E J UL 0 6 1988 A1331A7 D 5EMELAB BUW 91 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation M EC H A N IC A L DATA Dim ensionsin mm FEATURES • LOW VCE SAT

stk621-043

Abstract: stk621-043a STK621-043A-E A1339 Sanyo STK621 3 phase inverter sanyo STK621 INVERTER motor drive SANYO ST-K6 90-IO
Contextual Info: Ordering number : EN*A1339A Thick-Film Hybrid IC STK621-043A-E Air Conditioner Three-Phase Compressor Motor Driver IMST Inverter Power Hybrid IC Overview The STK621-043A-E is a 3-phase inverter power hybrid IC integrating 3-phase inverter power output stages, pre-driver,

Contextual Info: SEMELAB LTD A133167 Q00Q02S 1 agMwpEjr 1» nitii "type No. 2N5480 2N5490 2N5491 2N5492 2N5493 2N5494 2N5495 2N5496 2N54 97 2N5498 Reliability Option HI-REL SCREEN Polarity Package VCEO •c cont n "’ 1^iHwwg " j.v'ri;m ifiiirttt hFE@ VCE/*C »T Pd 7 7 7

2N372A

Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665

sml752r4cn

Contextual Info: bDE D SEMELAB PLC A1331Ô7 OOGDfiEb ÛG3 MSIILB IN I = ^ = SEME m i SML802R4CN SML752R4CN SML802R8CN SML752R8CN LAB 800V 750V 800V 750V 2.4012 2.40Í2 2.8012 2.80Í2 4.5A 4.5A 4.0A 4.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: Reliability Polarity Option TVpe No. A1331A7 O Q O O O m 37E D SEMELAB LTD Package v CEO <C eont hF E @ v CE/fC »T Pd 2N2817 2N2818 2N2819 2N2820 2N2821 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T063 T063 T063 T063 T063 150 200 80 100 150 20

BAX65

Abstract: BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106B BD107A
Contextual Info: SEMELAB LTD 37E D • A1331A7 GODDQTfi 1 J S E M E L A B MANUFACTURING E ■c Polarity Package VCEO cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T05 T05 45 45 64 64 0.6 0.6 0.1 0.1 j i r / PNP PNP PNP PNP PNP T05 T05 T05 T05 T05 64 32 32 64 32 0.1

Contextual Info: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50

Contextual Info: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced

transistor C3467

Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
Contextual Info: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

Contextual Info: SA/lYO NEW PRODUCT PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

2SC4133

Abstract: 2SA1591 C4133
Contextual Info: I Ordering num ber: E N 2 5 1 5 2SA1591/2SC4133 PNP/ NPN EpitaxialPlanarSiliconTransistors S A X Y O i Switching Applications _ with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri=4.7kO,R2=47kO)

83OF

Abstract: gpr 163 TX4964 R4000 R4400 R5000 TX49 R5000 mips MIPS Translation Lookaside Buffer TLB R3000 040106DHQ1
Contextual Info: 64 ビット TX System RISC TX49/L3 コア アーキテクチャ Rev 1.0 セミコンダクター社 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

24c16 eeprom resetting only circuit diagram and d

Abstract: a180, transformer atmel 24c16 SAA7322 intel core i3 MOTHERBOARD CIRCUIT diagram mba mini projects SB82371SB TriMedia TM-1000 ATMEL 220 24C16 trimedia tm1300
Contextual Info: INTEGRATED CIRCUITS TM-1300 Media Processor Product Specification Supersedes data of 2000 May 30 File under INTEGRATED CIRCUITS, TR1 2000 Sep 30 Terms and Conditions TERMS AND CONDITIONS Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes,

Sot-220

Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
Contextual Info: 3 7E SEMELAB LTD D • B1331A7 ■ G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION

BUP34

Abstract: LE17 900Volts
Contextual Info: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob