A472 G Search Results

130a

Abstract: A472 G A470 A471 A472
Contextual Info: GAS DISCHARGE TUBE 9,5x11,5mm 471 /A 472 No. A4 A477 0/A 0/A471 471/A /A472 Specifications 3-electrode 20kA/20A High Discharge Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protection

A470

Abstract: A471 A472 G A472 SL1024B UL-497B
Contextual Info: GAS DISCHARGE TUBE 9,5x11,5mm 471 /A 472 No. A4 A4770/A 0/A471 471/A /A472 Specifications 3-electrode 20kA/20A High Discharge Series This product is not recommended Features Non-radioactive Lead Free Failsafe Option for new designs. Please refer to Littelfuse series SL1024B.

Contextual Info: A Series www.vishay.com Vishay BCcomponents 横向插件积层陶瓷电容器 1 类瓷 2 类瓷和 3 类瓷 ,50VDC,100VDC,200VDC Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC

Contextual Info: A Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC FEATURES • • • • High capacitance with small size High reliability Axial mounting style

Contextual Info: A.V Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for Automotive Applications Class 1 and Class 2, 50 VDC, 100 VDC, 200 VDC FEATURES • AEC-Q200 qualified with PPAP available • High reliability MLCC insert with wet build

A823

Contextual Info: A.V Series www.vishay.com Vishay BCcomponents 汽车级横向插件积层陶瓷电容器 1 类瓷和 2 类瓷 : 50VDC， 100VDC， 200VDC Axial Leaded Multilayer Ceramic Capacitors for Automotive Applications Class 1 and Class 2, 50 VDC, 100 VDC, 200 VDC

a473

Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Contextual Info: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

a473

Abstract: A472 A-473 ESAC87-009 SC-65
Contextual Info: ESAC87-009H6A i Outline Drawings SCH O TTKY BARRIER DIODE ^3.2±o ' 15 . 5 maj 13.0 , r" i 5iC * H JU -2.0 / ! T.Zto 1 ' S f- m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

A472 G

Contextual Info: Æ n tro n PRODUCT DEVICES.INC. A B S O L U T E MAXIMUM R A T I N G S PARAMETER 1000V, UNI TS SYMBOL D r a i n - S o u r c e Vo 1t . 1 D rain-G at e Voltage ( R GS =1.0M n ) (1) Gate-Source Voltage C o n t i n uou s D rain C urren t Continuous ( T c = 25° C )

TSL0809R

Abstract: TSL0809RA TSL0809RA-150K1R9 TSL1112RA TDK TSL
Contextual Info: _ 9_ INDUCTORS Radial Lead • TSL SERIES Non-Magnetic Shield 9 o /Is sw itching p o w e r supplies become increasingly p o p u la r f o r use in electronic equipm ent, a larg e cboice o f .08 to 6 am pere choke coils a re in a g re a te r dem and as w ell as a variety o f

MNR38

Abstract: MNR14 A472 MNR34 MNR78
Contextual Info: Chip Resistor Networks MNR The smallest new chip resistor networks are now available.MNR02 is the smallest resistor network in the world and the MNR35 fits into high density applications to facilitate building highly reliable .compact industrial equipment.

ESAC87-009

Abstract: SC-65 T930 A472 J13M
Contextual Info: ESAC87-009d 6A SC H O T T K Y B A R R IE R DIODE • $ N I : Features • «Ve Low V F • x-r c a t» Super high speed switching. ■ W H M ft Connection Diagram High reliability by planer design t : Applications • *a«*X 4 *y*> 7 High speed power switching.

A47-2000-S

Abstract: clarostat swe CLAROSTAT 470 CLAROSTAT A47
Contextual Info: Series 470 and A47 Electrical Specifications Series 470 and A47 Panel Mount 0.5 Watt, Thick-Film. Conductive-Plastic P otenlio m eterer Resistance Range 150Q to 5 Megohms linear; 1KQ to 2.5 Megohms tapered. Resistance Tolerance Linear up to 500KQ, ±10%; above 500KQ, ±20%.

kss 120c

Abstract: A47-50K-S A475 a475 C clarostat swe Clarostat type J SWE-20 CLAROSTAT 470 CLAROSTAT A47
Contextual Info: Series 4 70 and A 4 7 Series 4 7 0 and A 4 7 Electrical Specifications Panel Monnl 0.5 W alt, T h ic k -F ilm . C o n d l i et i v e - P i a s l i c P o t e n t i d m e t e re r Resistance Range 150il to 5 M egohms linear; 1KQ to 2.5 Megohms tapered. Resistance Tolerance

AH DO214

Abstract: SMC C96
Contextual Info: v G eneral Se m i c o n d u c t o r PACKAG ING < Y >/.>/: V STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 2 2B 2D 2E 2F 2J 2L 2M 3 4 4A 4B 4C 4D 5 5C 6 7 8 9 51 52 2C 26 2K 53 54 4E 4F 4G 4H 55 5A 5B 43 44 56 57 58 59 9A 9C 60 61

S&EI CAPACITORS

Abstract: a564 E682 a823 e684 sei POLYCARBONATE CAPACITORS 22 u series e474 A822 B823 B564
Contextual Info: ? * i : • - sei W S 8 S B I! . CAPACITORS METALLIZED POLYCARBONATE CAPACITORS Radial Lead, Rectangular, Epoxy Encased SERIES The 22N S eries is ideally su ite d fo r p rinte d circu it, and a p p lica tio n s requiring p re cise u n ifo rm ity w ith th e

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

224M Z5U 50

Abstract: 473Z 103M capacitor Z5U A40A330J A40A270J A41A102K A333M 104m Z5U 50 A41C104K 15z5
Contextual Info: Ceramic Capacitors Series A Mono-Axial 50VDC and 100VDC Conformai Coated Axial Multilayer Capacitors Description: • See figures 1 and 2 for part num ber code for OEM and distributor • Temperature coefficient: COG, X7R, Z5U Param eters Term inal strength:

A47-2000-S

Contextual Info: Series 470 and A47 Electrical Specifications R esistance R ange 1 5 0 ft to 5 M egohm s linear; I K£2 to 2-5 M egohm s tapered. R esistance Tolerance L inear up to SOOKU, ±1 0 % : above 500K12. ±20% . T apers up lo lOOKii; ± 10% ; above I0 0 K U . ±20% .

TC511665

Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

Contextual Info: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

CK420

Abstract: 500N 50P 2sc196 CK477 2N1076 2N1077 2N1074 CI2923 2N1075 2N107
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as

d472 TRANSISTOR

Abstract: d472 TRANSISTOR equivalent wd90c10 IMS T414 t410 TRANSISTOR SPB105 K544 80386SX BF311 it235
Contextual Info: WD7910IWD7910LP TABLE OF CONTENTS Section Title 1.0 INTRODUCTION 1.1 Document Scope 1.2 Features 1.3 General Description 1.3.1 WD791 0 1.3.2 WD7910lP 8-1 8-1 8-1 8-2 8-2 8-2 2.0 ARCHITECTURE 2.1 Initialization And Clocking AT Bus . . . . . . . 2.2 2.3 Main Processor Control